Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

This paper describes the effect of ionizing radiation on the interface properties of Al/Ta₂O₅/Si metal oxide semiconductor (MOS) capacitors using capacitance–voltage (C–V) and current–voltage (I–V) characteristics. The devices were irradiated with X-rays at different doses ranging from 100?rad to 1?Mrad. The leakage behavior, which is an important parameter for memory applications of Al/Ta₂O₅/Si MOS capacitors, along with interface properties such as effective oxide charges and interface trap density with and without irradiation has been investigated. Lower accumulation capacitance and shift in flat band voltage toward negative value were observed in annealed devices after exposure to radiation. The increase in interfacial oxide layer thickness after irradiation was confirmed by Rutherford Back Scattering measurement. The effect of post-deposition annealing on the electrical behavior of Ta₂O₅ MOS capacitors was also investigated. Improved electrical and interface properties were obtained for samples deposited in N₂ ambient. The density of interface trap states (D_it) at Ta₂O₅/Si interface sputtered in pure argon ambient was higher compared to samples reactively sputtered in nitrogen-containing plasma. Our results show that reactive sputtering in nitrogen-containing plasma is a promising approach to improve the radiation hardness of Ta₂O₅/Si MOS devices.     

The charge-density-wave transition in Lu5Ir4Si10 under uniaxial pressure

Abstract

An uniaxial pressure cell for low temperature use is described in detail. Then we present data of the electrical resistance of single crystals of Lu₅Ir₄Si₁₀, which is known to show a charge-density-wave transition around 83 K and to become superconducting near 3.8 K, both phenomena being anticorrelated under pressure. Since the CDW in Lu₅Ir₄Si₁₀ is a quasi one-dimensional phenomenon because of a chain-like structure, it responds to uniaxial pressure in a specific way.     

Equilibrium polymerization in a solvent: Solution on the Bethe lattice

The lattice model for equilibrium polymerization in a solvent proposed by Wheeler and Pfeuty is solved exactly on a Bethe lattice (core of a Caylay tree) with general coordination numberq. Earlier mean-field results are reobtained in the limitq, but the phase diagrams show deviations from them for finiteq. Whenq=2, our results turn into the solution of the one-dimensional problem. Although the model is solved directly, without the use of the correspondence between the equilibrium polymerization model and the diluten0 model, we verified that the latter model may also be solved on the Bethe lattice, its solution being identical to the direct solution in all parameter space. As observed in earlier studies of the puren0 vector model, the free energy is not always convex. We obtain the region of negative susceptibility for our solution and compare this result with mean field and renormalization group (-expansion) calculations.     

爆电换能脉冲大电流输出研究

 基于爆电换能原理,使用掺铌的PZT 95/5陶瓷组装换能器件,在垂直工作模式下,对爆电电源LRC电路响应进行了理论分析,并开展了脉冲大电流输出实验研究。实验采用多组PZT 95/5铁电陶瓷并联,利用平面波发生器作为冲击加载手段,获得了峰值5 kA以上的脉冲大电流,初始电流上升速率可达10~20 GA/s。实验结果与理论设计符合较好。     

Magneto optics of single photons emitted from single InAs/GaAs self-assembled quantum dots in a planar microcavity

We fully characterize the fine spectral structure of neutral and negatively charged single microcavity quantum dot excitons, using polarization-sensitive magneto-photoluminescence spectroscopy. We show that the microcavity allows the simultaneous detection of both the bright and dark excitons using Faraday configuration. Thus, we were able to fully determine the fine structure and the g-factors of the neutral and negatively charged single exciton states within the same single quantum dot. Our measurements are in excellent agreement with novel, many carrier model calculations, which take into account Coulomb and exchange interactions among all the confined e–h pair states.     

A variable metric algorithm for unconstrained minimization without evaluation of derivatives

Summary This paper presents a modification of the BFGS-method for unconstrained minimization that avoids computation of derivatives. The gradients are approximated by the aid of differences of function values. These approximations are calculated in such a way that a complete convergence proof can be given. The presented algorithm is implementable, no exact line search is required. It is shown that, if the objective function is convex and some usually required conditions hold, the algorithm converges to a solution. If the Hessian matrix of the objective function is positive definite and satisfies a Lipschitz-condition in a neighbourhood of the solution, then the rate of convergence is superlinear.     

Quantum cutting in Gd2SiO5: Eu3+ by VUV excitation

The emission and excitation spectra of Gd2SiO5: Eu3+ were investigated using the VUVbeam line of the Beijing Synchrotron Radiation Facility (BSRF). The experimental results werediscussed in the frame of visible quantum cutting process involved in Gd3+-Eu3+ system. Upon di-rect excitation into the 6GJ states of Gd3+, two visible photon emissions from Eu3+ were observed.Cursory evaluation proved that Gd2SiO5: Eu3+ is an efficient visible quantum cutter.     

YBCO涂层导体用Ni5W基带的制备和立方织构的发展

为了制作能满足YBCO涂层导体（coated conductor）所需要的高强度、低磁性的立方织构基带，本工作用粉末冶金方法制作了Ni-5at％W合金基带．为评估基带中立方织构的发展，用March-Dollase函数对各种热处理样品的择优取向度进行了研究，结果与用X射线极图法和电子背散射衍射法得到的结果基本一致．研究结果表明，在实验中所用的工艺参数范围内，随总加工率和热处理温度的提高，基带中立方织构百分数明显增高．提高总加工率实际增加了冷加工样品中立方织构晶粒或立方核心的数量．实验中得到了较好的和实用的工艺制度，用这种工艺可以制作出具有99％～100％立方织构百分数，并具有很好一致取向度的Ni5W基带．     

Relativistic R-matrix studies of photoionization processes of Ar^5＋

The 3s–np photoionization processes of the ground state 2P1/2 and the metastable state 2P3/2 of Ar5＋ are investigated using our recently developed relativistic R-matrix code, where the interactions between the bound states and the continuum states are included. Both resonance positions and the oscillator strengths are in much better agreement with the absolute experimental measurements by Wang et al.[Wang J C, Lu M, Esteves D, Habibi M, Alna’washi G and Phaneuf R A 2007 Phys. Rev. A 75 062712] with a resolution of 80 meV than their theoretical results. The contributions of the two experimental unresolved transitions are distinguished in our calculations, which show that the transitions from the ground state also make significant contributions to some resonances. Our theoretical results are also in good agreement with the measurements for the first resonance with a higher resolution of 20 meV.