Yb3+,Er3+共掺BaGd2ZnO5材料的制备及其上转换发光效率

采用溶胶-凝胶法制备了含有不同Yb³⁺,Er³⁺掺杂浓度的BaGd₂ZnO₅上转换发光材料,测量了这些样品在不同激发光密度下的上转换光发射功率及上转换效率。实验结果表明:在不同激发光密度下,所有样品的光发射功率都存在极大值,其中Yb³⁺掺杂摩尔分数为4%,Er³⁺掺杂摩尔分数为1%时样品的最大发射光功率可达20 mW;样品的上转换绝对效率也存在极大值,随着Yb³⁺和Er³⁺浓度增加,绝对效率的极大值向较低激发光密度方向移动,在Yb³⁺掺杂摩尔分数为9%,Er³⁺掺杂摩尔分数为3%时样品的上转换效率达到最高,绝对效率为3.2%,极值效率最大值为6.9%。     

Dark Energy Density in Brane World

We present a possible explanation to the tiny positive cosmological constant under the frame of AdS5 spacetime embedded by a dS4 brahe. We calculate the dark energy density by summing the zero point energy of massive scalar fields in AdS5 spacetime. Under the assumption that the radius of AdS5 spacetime is of the same magnitude as the radius of observable universe, the dark energy density in dS4 brahe is obtained, which is smaller than the observational value. The reasons are also discussed.     

Effects of Dual-Electrode Biasing on Er in a Toroidal Plasma

Two externally biased electrodes were inserted into the plasma on the KT-5C tokamak to test the effects on modifying the radial electric field Er, other than single biasing. Using various combinations of biasing voltage,the influences of double biasing are compared with the single biasing. It turns out that the effect of dual-biasing is also effective as a single one, but the outer electrode seems to be shielded by the inner one and show less influence. The results clearly show that the radial electric field Er changed by external biasing is intrinsically an effect localized at the edge of the plasma, which is caused by the electrode induced radial current; and dualelectrode biasing using the method similar to the single biasing seems not to be able to increase more distinctly the peaking effect on Er than the single biasing.     

Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory

Sn-doped Ge2Sb2Te5 thin films deposited on Si（100）/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallization temperatures of the 3.58 at.%, 6.92 at.% and 10.04 at.% Sn-doped Ge2Sb2Te5 thin films have decreases of 5.3, 6.1 and 0.9℃, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystalline phase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2Te5 thin films increases about 2-10 times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. In addition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2Te5 thin films in the crystalline state has been observed, which can play an important role in minimizing resistance difference for the phase-change memory cell element arrays.     

活化LaNi5衍射峰各向异性应力展宽模型在LHPM程序中的实现

在活化LaNi5的粉末衍射轮廓中会出现较明显的各向异性展宽现象,这给衍射数据的Rietveld分析带来相当的难度.Rodriguez-Carvajal提出了一个唯像模型,只需精修少量的参数就能对于各向异性展宽的衍射峰获得较好的拟合.基于这个模型的原理,本文描述了活化laNi5衍射峰各向异性应力展宽模型在LHPM 6.5中的实现过程,并将所得结果与FullProf 2000的结果进行了比较.     

微波消化-固相萃取光度法测定生物样品中的钴

根据 2 - (2 -喹啉偶氮 ) - 1,5 -苯二酚 (QADHB)与钴的显色反应及 C18固相萃取小柱对显色络合物的固相萃取 ,建立了一种测定生物样品中痕量钴的新方法。在 p H=4 .0的 HAc- Na Ac缓冲介质中 ,溴化十六烷基三甲基铵 (CTMAB)存在下 ,QADHB与钴反应生成 2∶ 1稳定络合物 ,该络合物可用 C18固相萃取小柱富集 ,小柱上富集的络合物用乙醇 (内含 2 %乙酸 )洗脱后用光度法测定 ,络合物最大吸收波长为5 80 nm,钴含量在 0— 0 .8μg/m L范围内符合比耳定律 ,摩尔吸光系数 ε=5 .6× 10 4L· mol-1·cm-1。本方法用于几种生物样品的分析 ,结果令人满意。     

IR光谱分析PEO/V2O5纳米复合材料结构

聚合物溶液直接嵌入法制备 PEO/ V2 O5纳米复合材料。由红外光谱 (IR)表征了 PEO与氧化物层之间的相互作用。V2 O5干凝胶的钒氧双键 (V=O)主要与层间聚合物 PEO中的醚氧键 (Oet)发生作用 ,以Oet…V=O形式存在     

铝含量对LaNi5-xAlx合金氘化与去氘化热力学函数的影响

测定了LaNi5-xAlx(x=0.0、0.1、0.2、0.3)的氘化与去 氘化热力学参数,评价了LaNi5-xAlx中铝含量对氘化与去氘化热力学函 数的影响。研究结果表明,合金的坪台压力和吸氘容量随x的增加而降低;坪率随x 的增加而增加;热力学焓变与熵变随x的增加而减少;滞后系数Hf随x的增加而减少 。     

超声速平板圆台突起物绕流实验和数值模拟研究

高速飞行器表面不可避免的存在突起物并形成复杂流场, 从而引起飞行器气动特性和热载荷的变化; 同时, 突起物是流动控制的重要方法之一, 合适的突起物形状及安装位置对于改善冲压发动机进气道性能有重要意义. 本文采用基于纳米粒子的平面激光散射技术(NPLS)研究了马赫3.0来流边界层为层流的平板上三个不同高度圆台突起物绕流流场, 主要关注了突起物后方的尾迹边界层, 并采用高精度的显式五阶精度加权紧致非线性格式(WCNS-E-5)离散求解Navier-Stokes方程模拟了该流场. 获得了超声速圆台绕流精细流场结构, 观察到突起物后方尾迹区域边界层发展的过程. 结合实验和数值模拟结果可以发现, 当圆台高度接近或者小于当地边界层厚度时, 突起物对边界层的扰动非常弱, 圆台后方尾迹边界层能够维持较长距离的层流状态, 在边界层转捩阶段也有清晰的发卡涡结构出现; 反之, 边界层受到的扰动明显增大, 在突起物后方很快发展为湍流; 风洞噪声对本文研究圆台引起的边界层扰动有一定影响, 实验获得的边界层转捩位置要比数值结果靠前. 基于NPLS流场图像, 采用间歇性方法分析了圆台突起物后方边界层的特性, 对于高度大于边界层厚度的圆台其间歇性曲线较为接近并且更加饱满, 边界层的脉动也更为强烈.     

CuSO4·5H2O在用KBr压片法制样时所发生的固相反应的研究

用Ｘ射线衍射法和ＦＴ－ＩＲ法研究了ＣｕＳＯ４·５Ｈ２Ｏ在用ＫＢｒ压片法制样过程中所发生的固相反应．主要产物为：Ｋ２Ｃｕ（ＳＯ４）２·６Ｈ２Ｏ和ＣｕＢｒ２。