19F NMR study of relative polarities and reactivities of N-H,N-Hg,and N-Au bonds in 2-(4-fluorophenyl)benzimidazole and its PhHg and Ph3PAu derivatives in intermolecular exchange

It has been shown by the¹⁹F NMR method that the relative polarities of nitrogenelement bonds in 2-(4-fluorophenyl)benzimidazole and its PhHg and PPh₃Au derivatives increase in the order N-H19F NMR. It has been found that these reactions occur by a bimolecular associative mechanism and that the N-H bond is substantially less reactive than the N-Hg and N-Au bonds, which have identical reactivities within the limits of sensitivity of the method used.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 8, pp. 1574–1580, August, 1995.This work was carried out with financial support from the Russian Foundation for Basic Research (Project No. 93-03-5528).     

Influence of concentration on the activation energy for diffusion in polymer-solvent systems

The self-diffusion of benzene, toluene, and ethylbenzene in polystyrene have been analyzed using the Vrentas/Duda free-volume diffusion model. Diffusion coefficient predictions suggest an exponential concentration dependence of the activation energy required to overcome attractive forces, E. Without the use of any diffusion data approximating E as zero over the entire concentration range yields self-diffusion coefficient predictions which are in good agreement with experimental data. © 1992 John Wiley & Sons, Inc.     

Solvent effects in the fluorination of 1,2-dichloro-1,1-difluoroethane (R-132b) to 2-chloro-1,1,1-trifluoroethane (R-133a)

Trichloroethylene has been found to act as a rate enhancing co-factor in the liquid phase, tantalum (V) halide catalyzed, fluorine-for-chlorine exchange reaction of 1,2-dichloro-1,1-difluoroethane (R-132b) to 2-chloro-1,1,1-trifluorethane (R-133a). Several trifluoromethyl substituted benzenes have also been found to be rate-enhancing solvents.     

一维应变压缩下TC4钛合金绝热剪切研究

 利用内径为57 mm的压缩气炮，在撞击速度为0.2~1.2 km/s（相应的靶中压力为3~15 GPa）范围内进行对称碰撞实验，以研究TC4（Ti-Al6-V4）钛合金在一维应变冲击压缩条件下的绝热剪切现象。对回收得到的受冲击样品，在扫描电镜（SEM）下进行细观金相分析。结果指出，一维应变冲击压缩条件下，TC4钛合金中绝热剪切带产生的对称碰撞速度阈值为500 m/s（相当于样品中的压力为5.87 GPa）；主剪切带与冲击方向约为45°角，带上有圆形和椭圆形两种孔洞且随碰撞速度的增大而增多和长大，这是典型的韧性损伤特征。随碰撞速度增大，产生与主剪切带成15°角的支剪切带。这些与理论预言相符。X射线能谱分析结果指出，剪切带内材料发生了(α+β)→β相的转变，是典型的相变带。剪切带的温度估算与实验提供的信息吻合。     

Michael-Addition Reaction of Malononitrile with a,β-Unsaturated Cycloketones Catalyzed by KF/Al_2O_3

The utility of fluoride salts as potential base in a va-riety of synthetic reactions has been recognized in re-cent years.1 However, low solubility of fluoride salts in ordinary solvents hampers their wide applications in organic synthesis. On the other hand, there has been increasing use of inorganic solid supports as catalysts for many years2 resulting in higher selectivity, milder reaction conditions and easier work-up. Especially po-tassium fluoride-coated alumina (KF-alumina) has been a …     

Synthesis of ZnAl2O4/α-Al2O3 complex substrates and growth of GaN films

With the solid phase reaction between pulsed-laser-deposited (PLD) ZnOfilm and α-Al2O3 substrate, ZnAl2O4/α-Al2O3 complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl2O4 changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM)images indicate that the surface morphology of ZnAl2O4 transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRDspectra present that ZnAl2O4 prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl2O4/α-Al2O3 substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes from c-axis single crystal to poly-crystal as ZnAl2O4 layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl2O4 layer can promote nucleation at initial stage of GaN growth, which leadsto the (0001)-oriented GaN film.