Enhancement of photosensitivity in bismuth doped Cu2ZnSnS4 thin films

In this paper, the effect of bismuth doping on the structural, morphological, optical and electrical properties of Cu₂ZnSnS₄ (CZTS) films has been investigated. The undoped and bismuth doped CZTS films (0, 0.5, 1, 1.5 and 2 mol%) were deposited on glass substrates by solution based method. The XRD result shows a significant improvement in the crystallinity of the films with increase in bismuth concentration. The Raman spectra of the films show the dominant peak at 334 cm^–1 corresponding to A₁ vibrational mode of CZTS kesterite phase. The FESEM micrographs of the films show an enhancement in the grain size and densification with the addition of bismuth ion concentration. The optical bandgap of the films was found to vary (1.59–1.40 eV) with the doping of bismuth ions. The I –V characteristics indicate twofold increment in the photoconductivity for the bismuth doped CZTS films under 100 mW/cm² illumination suggesting their potential application in photovoltaic devices. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

缩合法合成磁性荧光高分子CdTe@Fe_3O_4/P(NIPAM-co-AA)复合微球及其表征

具有超顺磁性和荧光特性的CdTe@Fe_3O_4/P(NIPAM-co-AA)多功能复合微球是以P(NIPAMco-AA)为模板制备而成.首先,采用溶胀法使模板微球带有磁性;其次,辅助TEOS和APTES两种化学试剂实现对Fe_3O_4/P(NIPAM-co-AA)微球表面的氨基功能化;最后,携带氨基的磁性微球与巯基乙酸修饰的CdTe量子点通过酰胺缩合反应,将量子点键合到磁性微球表面上,最终获得单分散的磁性荧光高分子复合微球.分别采用扫描电子显微镜、透射电子显微镜、倒置荧光显微成像系统、荧光分光光度计以及振动样品磁强计等方法对所获复合材料的结构与性能进行了表征.结果表明:复合微球单分散性良好,平均粒径约为30μm,饱和磁化强度可达5.4emu/g,具有良好的超顺磁性和较高的荧光发光效率.该材料将磁性、荧光结合到微米级高分子共聚物上,不仅解决了纳米粒子分离和处理的困难,而且奠定了多功能材料在生物标记、荧光成像等诸多领域潜在的应用基础.     

13CH4分子v3振动带空气和氮气加宽系数温度依赖性研究

采用中红外波段连续可调谐二极管激光器和自行研制的低温吸收池, 测量了温度为296 K, 252 K, 213 K, 173 K时, 3.38 μm附近¹³CH₄分子的四条跃迁谱线的氮气和空气加宽光谱; 首次通过实验获得空气和氮气对¹³CH₄分子的碰撞加宽系数, 以及谱线加宽系数的温度依赖系数. 实验过程中, 利用Voigt线型对所测量的光谱进行拟合. 实验结果表明, 氮气和空气对¹³CH₄分子的碰撞诱导加宽系数随温度的降低而增大; 相同温度下, 氮气对¹³CH₄分子的碰撞加宽系数普遍大于空气加宽系数. 实验数据为地球和外星体大气遥感探测提供了依据.     

退火对非故意掺杂4H-SiC外延材料386 nm和388 nm发射峰的影响

10 K条件下,采用光致发光(PL)技术研究了不同退火处理后非故意掺杂4H-SiC外延材料的低温PL特性.结果发现,在370—400 nm范围内出现了三个发射峰,能量较高的峰约为3.26 eV,与4H-SiC材料的室温禁带宽度相当.波长约为386 nm和388 nm的两个发射峰分别位于~3.21 eV和~3.19 eV,与材料中的N杂质有关.当退火时间为30 min时,随退火温度的升高,386 nm和388 nm两个发射峰的PL强度先增加后减小,且退火温度为1573 K时,两个发射峰的PL强度均达到最大. 关键词： 光致发光 退火处理 能级 4H-SiC     

Fortschritte in der Auswertung von Markierungsversuchen an dynamischen Systemen

In einem dynamischen System vollziehen sich kontinuierlich ablaufende Stoffwandlungen, deren Ausgangsstoffe dem System ständig zufließen und deren Folgeprodukte das System kontinuierlich verlassen. Es wird das Verhalten eines solchen Systems mit drei Pools bei Markierungsexperimenten untersucht. Die Ergebnisse dieser mathematischen Untersuchungen werden auf die Erforschung des Stickstoffstoffwechsels laktierender Rinder mit Hilfe des stabilen Isotops ¹⁵N angewandt. In diesem Fall enthält das dynamische System zwei kleine stoffwechselaktive Pools und einen großen, niclit intensiv am Stoffwechsel beteiligten Körpereiweiβ-Pool.     

Iron-related luminescence centers in ZnWO 4 :Fe

A systematic spectroscopic study of single ZnWO 4 :Fe crystals with different iron concentrations has been performed under excitation by ultraviolet light, by synchrotron radiation or under photostimulation by near-infrared light. The luminescence of Fe 3+ -related centres has been studied. It is shown that iron centres of different types efficiently promote the formation of crystal defects at low temperatures. Electrons and holes can be trapped near Fe 2+ or Fe 3+ ions, which is further revealed in phosphorescence, thermostimulated or photostimulated luminescence. At room temperature the main effect of iron impurity is to reduce the light yield of a ZnWO 4 scintillator.     

Research on the defect structure and g factors for the tetragonal (CrO4)3− impurity center in ZrSiO4: Cr5+ crystal

ABSTRACT

The EPR g factors g// and g⊥ for the tetragonal (CrO₄)^3? impurity center in ZrSiO4: Cr⁵⁺ crystal are studied from the high-order perturbation formulas based on the two-mechanism (the crystal field and charge-transfer mechanisms) model. The studies indicate that differing from the tetragonally-elongated host (SiO4)^4- tetrahedron, the dominant defect structure of the substitutional (CrO₄)^3? tetrahedron is tetragonally- compressed with the ground state |d_z² due to the Jahn-Teller distortion. Furthermore, the agreement of g factors between calculation and experiment requires a small admixture of the first excited state |d_x²_?y² to the ground state |d_z² due to the vibrational motion of ligands, which leads a compressed (CrO₄)^3? tetrahedron to become a twinkling elongated one, These results are discussed.     

Silica-Polyethyleneglycols/N 2 O 4 Complexes as Heterogeneous Nitrating and Nitrosating Agents

Silica-chloride was reacted with different quantities of H(OCH 2 CH 2 ) n OH (n = 2-4) to furnish silica-based linear polyethylene glycols and cyclic polyethylene glycolic ethers. The N 2 O 4 complex of silica-tetraethylene glycolic ether ( III ) was selected and used as a stable, cheap, and heterogeneous silica-based reagent for the selective mono- and dinitration of phenols and nitrosation of thiols.     

Studies on 1,10-Phenanthroline Complexes of Some Hydroxyaryltellurium Trihalides

The synthesis and structural features of some newly synthesized 1,10-phenanthroline complexes of p-hydroxyphenyl-and 3-methyl-4-hydroxyphenyltellurium trihalides (chlorides, bromides, and iodides) are reported. The resulting complexes have been subjected to elemental analyses, conductance and cryoscopic measurements, infra-red and proton magnetic resonance spectral studies. Solution studies reveal the weak to 1:1 electrolyte type behavior of these complexes in solution. Spectral studies indicate the linkage of phenanthroline to the tellurium atom through the nitrogen atoms. Central tellurium atom in these complexes is hexa-coordinated in an octahedral way.     

Unprecedented Transformation of Thioglycosides to Their Corresponding 1‐O‐Acetates in the Presence of HClO4‐SiO2 §

An unprecedented conversion of thioalkyl/aryl glycoside to the corresponding 1‐O‐acetates has been described using acetic anhydride and HClO₄‐SiO₂ at rt. Although this transformation does not play an important role in the oligosaccharide synthesis in comparison to its reverse transformation, this gives useful information in selecting the reaction condition for the synthesis of oligosaccharides. The yields were excellent in all cases.