2-(4-氟代苯甲酰基)苯甲酸-铕配合物的合成、结构表征及荧光性能的研究

以硝酸铕、2-(4-氟代苯甲酰基)苯甲酸(HL)、1,10-菲咯啉(Phen)和三苯基氧膦(TPPO)合成了EuL₃(H₂O)₆,EuL₃Phen(H₂O)₄和EuL₃(TPPO)(H₂O)₅三种固态配合物。用元素分析、红外光谱、核磁共振氢谱对配合物进行了组分确定和结构表征。IR表明,2-(4-氟代苯甲酰基)苯甲酸与Eu3+形成配合物后,位于1 692 cm-1处羧基的ν_CO峰消失,2 500～3 200 cm-1处羧基的ν_O—H峰也消失,出现了羧酸盐特有的反对称伸缩振动吸收峰(ν_as(CO-₂))和对称伸缩振动吸收峰(ν_s(CO-₂)),且Δν(ν_as(CO-₂)-ν_s(CO-₂))与钠盐的Δν相近,说明羧酸根与Eu3+以对称双齿桥式配位。在1H NMR中,形成配合物后第一配体苯环上的质子峰变为宽峰且移向高场,Phen和TPPO中质子化学位移移向低场。室温下测定了配合物的荧光激发光谱和发射光谱,激发光谱表明配合物EuL₃(H₂O)₆,EuL₃Phen(H₂O)₄和EuL₃(TPPO)(H₂O)₅的最佳激发波长分别为353.0,355.0和357.0 nm;发射光谱均显示Eu3+离子的特征发射光谱,且表明Phen对Eu3+离子的荧光发射有明显增强作用。     

High‐mobility solution‐processed zinc oxide thin films on silicon nitride

A high effective electron mobility of 33 cm² V^–1 s^–1 was achieved in solution‐processed undoped zinc oxide (ZnO) thin films. The introduction of silicon nitride (Si₃N₄) as growth substrate resulted in a mobility improvement by a factor of 2.5 with respect to the commonly used silicon oxide (SiO₂). The solution‐processed ZnO thin films grown on Si₃N₄, prepared by low‐pressure chemical vapor deposition, revealed bigger grain sizes, lower strain and better crystalline quality in comparison to the films grown on thermal SiO₂. These results show that the nucleation and growth mechanisms of solution‐processed films are substrate dependent and affect the final film structure accordingly. The substantial difference in electron mobilities suggests that, in addition to the grain morphology and crystalline structure effects, defect chemistry is a contributing factor that also depends on the particular substrate. In this respect, interface trap densities measured in high‐κ HfO₂/ZnO MOSCAPs were about ten times lower in those fabricated on Si₃N₄ substrates. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

     

4-[(E)-2-(3, 4-二甲氧基苯基)乙烯基]苯氧基乙酸乙酯的合成及其NMR研究

以对硝基甲苯、3, 4-二甲氧基苯甲醛为起始原料,经过缩合,还原,重氮化水解,亲核取代反应,最终合成了新的化合物4-[(E)-2-(3, 4-二甲氧基苯基)乙烯基]苯氧基乙酸乙酯,用¹H 和¹³C NMR及多种二维核磁共振谱确定了该化合物的结构,完成了¹H 和¹³C NMR的归属,给出了分子中各氢,碳原子的准确化学位移.     

煅烧温度对Ba1.2Ca0.64SiO4：0.10Eu，0.06Mn粉体发光性能的影响

以MCM-41为硅源,在800~1 100℃下合成了Ba_1.2Ca_0.64SiO₄：0.10Eu,0.06Mn荧光粉,研究了煅烧温度对荧光粉发光性能的影响。实验结果表明,Eu²⁺的蓝绿光发射带的强度与宽度随煅烧温度的升高先增大后减小,在1 000℃时强度达到最大。最大发射峰位随温度的升高而发生红移,由800℃和900℃时的450 nm移至1 000℃和1 100℃时的480 nm。Mn²⁺的红光发射起源于Eu²⁺发射光的激发,其强度随温度的升高而增大。与Mn²⁺发生能量传递作用的Eu²⁺主要位于10配位的M（1）格位。     

Responses of Issatchenkia terricola WJL-G4 upon Citric Acid Stress

This study aimed to elucidate the responses of a novel characterized Issatchenkia terricola WJL-G4 against citric acid stress by performing physiological analysis, morphology observation, and structural and membrane fatty acid composition analysis. The results showed that under citric acid stress, the cell vitality of I. terricola WJL-G4 was reduced. The cell morphology changed with the unclear, uncompleted and thinner cell wall, and degraded the cell structure. When the citric acid concentration was 20 g/L, I. terricola WJL-G4 could tolerate citric acid and maintain the cell structure by increasing the intracellular pH, superoxide dismutase activity, and contents of unsaturated fatty acids. As the citric acid concentration was ≥80 g/L, the stress has exceeded the cellular anti-stress ability, causing substantial cell damage. The cell membrane permeability, the content of membrane lipids, malondialdehyde and superoxide anion increased, but the intracellular pH and superoxide dismutase activities decreased, accompanying the increase of citric acid concentrations. The findings of this work provided a theoretical basis for the responsive mechanism of I. terricola WJL-G4 under high concentrations of citric acid, and can serve as a reference for biological acid reduction in fruit processing.     

Pressure dependence of the thermal stability in LiMn2O4

Structural stability in terms of the decomposition temperature in LiMn₂O₄ was systematically investigated by a series of high-temperature and high-pressure experiments.LiMn₂O₄ was found to have structural stability up to 5 GPa at room temperature.Under ambient pressure,the compound decomposed at 1300℃.The decomposition temperature decreased with increasing pressure,yielding more complex decomposed products.Below the decomposition temperature,the crystal structure of LiMn₂O₄ varied with pressure.The presented results in this study offer new insights into the thermal and pressure stability of LiMn₂O₄ materials as a cathode for lithium-ion batteries that can operate under extreme conditions.Therefore,these findings may serve as a useful guide for future work for improving lithium-ion batteries.     

Mn4+掺杂的新型铝酸盐红色长余辉材料

用高温固相法合成了红色长余辉发光材料LiAl₅O₈:Mn⁴⁺,Li₅AlO₄:Mn⁴⁺,LiAlO₂:Mn⁴⁺,发现前两种材料有红色余辉,这方面并没有报道过,并对这两种材料的发光性能作了研究,指明了不同基质中发光强弱不同原因。对不同Mn⁴⁺掺杂浓度的材料做了浓度依赖关系研究,确认Mn⁴⁺的发光是²E→⁴A₂的跃迁。Mn⁴⁺的发光是个宽带谱,材料在紫外区有强的吸收,发射谱范围可达620~770nm,峰值在675nm。对长余辉机制进行了探讨。     

The work function of hydrothermally synthesized UO2 and the implications for semiconductor device fabrication

The photoelectric work function of nearly stoichiometric (111) and (100) hydrothermally grown UO₂ was measured to be 6.28 ± 0.36 eV and 5.80 ± 0.36 eV, respectively. Candidate metals for electrical contacts are identified for both rectifying and non‐rectifying contacts based on work function, lattice compatibility, and electrical conductivity.     

Preparation, structures and photoluminescent enhancement effect of PbWO4–TiO2 composite nanofilms

A novel route for preparing PbWO₄–TiO₂ nanofilms on a glass substrate is firstly proposed. The collodion is used as a dispersant and film-forming agent. The nanofilms are characterized through SEM, XRD, TG/DTA, PL and IR, respectively. The results of XRD indicate PbWO₄ particles with tetragonal scheelite structure and TiO₂ particles with Anatase phase, and SEM shows they are well dispersed in the substrate. Compared with nanoparticles, when TiO₂ nanoparticles are added in 5% ratio, the PL intensities at 395 nm of PbWO₄ nanofilms are enhanced obviously. IR spectrum reveals a large absorption band between 750 and 870 cm⁻¹, which is the W–O stretching vibration in WO₄ tetrahedron.     

N型4H-SiC同质外延生长

利用水平式低压热壁CVD (LP-HW-CVD) 生长系统,台阶控制生长和衬底旋转等优化技术,在偏晶向的4H-SiC Si(0001) 晶面衬底上进行4H-SiC同质外延生长,生长温度和压力分别为1550℃和10⁴ Pa,用高纯N₂作为n型掺杂剂的4H-SiC原位掺杂技术,生长速率控制在5μm/h左右.采用扫描电镜(SEM)、原子力显微镜(AFM),傅里叶变换红外光谱(FTIR)和Hg/4H-SiC肖特基结构对同质外延表面形貌、厚度、掺杂浓度以及均匀性进行了测试.实验结果表明,4H-SiC同质外延在表面无明显缺陷,厚度均匀性1.74%, 1.99% 和1.32%(σ/mean),掺杂浓度均匀性为3.37%,2.39%和2.01%.同种工艺条件下,样品间的厚度和掺杂浓度误差为1.54%和3.63%,有很好的工艺可靠性. 关键词： 4H-SiC 同质外延生长 水平热壁CVD 均匀性