Spin-cluster glass state in U(Ga_(0.95)Mn_(0.05))_3

We report the study of a low temperature cluster glass state in 5% Mn-doped UGa_3 heavy fermion compound. This compound transforms from a paramagnetic state to a spin-cluster glass state, which is confirmed by measuring the dc susceptibility and magnetization. The ac susceptibility exhibits a frequency-dependent peak around Tf, which provides direct evidence of the cluster glass state. By analyzing the field-dependent magnetization and frequency-dependent ac susceptibility in detail, we deduce that this compound forms a spin-cluster glass state below T_f.     

Full-profile fitting of emission spectrum to determine transition intensity parameters of Yb~(3+):GdTaO_4

The Judd-Ofelt theoretic transition intensity parameters A_(tp)~k of luminescence of rare-earth ions in solids are important for the quantitative analysis of luminescence.It is very difficult to determine them with emission or absorption spectra for a long time.A "full profile fitting" method to obtain A_(tp)~k in solids with its emission spectrum is proposed,in which the contribution of a radiative transition to the emission spectrum is expressed as the product of transition probability,line profile function,instrument measurement constant and transition center frequency or wavelength,and the whole experimental emission spectrum is the sum of all transitions.In this way,the emission spectrum is expressed as a function with the independent variables intensity parameters A_(tp)~k,full width at half maximum(FWHM) of profile functions,instrument measurement constant,wavelength,and the Huang-Rhys factor S if the lattice vibronic peaks in the emission spectrum should be considered.The ratios of the experimental to the calculated energy lifetimes are incorporated into the fitting function to remove the arbitrariness during fitting A_(tp)~k and other parameters.Employing this method obviates measurement of the absolute emission spectrum intensity.It also eliminates dependence upon the number of emission transition peaks.Every experiment point in emission spectra,which usually have at least hundreds of data points,is the function with variables A_(tp)~k and other parameters,so it is usually viable to determine A_(tp)~k and other parameters using a large number of experimental values.We applied this method to determine twenty-five A_(tp)~k of Yb~(3+) in GdTaO_4.The calculated and experiment energy lifetimes,experimental and calculated emission spectrum are very consistent,indicating that it is viable to obtain the transition intensity parameters of rare-earth ions in solids by a full profile fitting to the ions' emission spectrum.The calculated emission cross sections of Yb~(3+):GdTaO_4 also indicate that the F-L formula gives larger values in the wavelength range with reabsorption.     

The H2+ molecular ion: Low-lying states

Matching for a wavefunction the WKB expansion at large distances and Taylor expansion at small distances leads to a compact, few-parametric uniform approximation found in Turbiner and Olivares-Pilon (2011). The ten low-lying eigenstates of H₂⁺ of the quantum numbers (n,m,Λ,±)$(n,m,\Lambda ,\pm )$  with n=m=0$n=m=0$ at Λ=0,1,2$\Lambda =0,1,2$, with n=1$n=1$, m=0$m=0$ and n=0$n=0$, m=1$m=1$ at Λ=0$\Lambda =0$ of both parities are explored for all interproton distances R$R$. For all these states this approximation provides the relative accuracy ?10⁻⁵$?10^{-5}$ (not less than 5 s.d.) locally, for any real coordinate x$x$ in eigenfunctions, when for total energy E(R)$E\left(R\right)$ it gives 10-11 s.d. for R∈[0,50]$R\in [0,50]$  a.u. Corrections to the approximation are evaluated in the specially-designed, convergent perturbation theory. Separation constants are found with not less than 8 s.d. The oscillator strength for the electric dipole transitions E1$E1$ is calculated with not less than 6 s.d. A dramatic dip in the E1$E1$ oscillator strength f_{1sσg−3pσu}$f_{1s{\sigma }_g-3p{\sigma }_u}$ at R∼R_eq$R\sim R_{eq}$ is observed. The magnetic dipole and electric quadrupole transitions are calculated for the first time with not less than 6 s.d. in oscillator strength. For two lowest states (0,0,0,±)$(0,0,0,\pm )$ (or, equivalently, 1sσ_g$1s{\sigma }_g$ and 2pσ_u$2p{\sigma }_u$ states) the potential curves are checked and confirmed in the Lagrange mesh method within 12 s.d. Based on them the Energy Gap between 1sσ_g$1s{\sigma }_g$ and 2pσ_u$2p{\sigma }_u$ potential curves is approximated with modified Pade Re^−R[Pade(8/7)](R)$R{e}^{-R}\left[Pade(8/7)\right]\left(R\right)$ with not less than 4-5 figures at R∈[0,40]$R\in [0,40]$ a.u. Sum of potential curves E_1sσg+E_2pσu$E_{1s{\sigma }_g}+E_{2p{\sigma }_u}$ is approximated by Pade 1/R[Pade(5/8)](R)$1/R\left[Pade(5/8)\right]\left(R\right)$ in R∈[0,40]$R\in [0,40]$ a.u. with not less than 3-4 figures.     

理论研究氧原子与富勒烯C60(Ih)的相互作用

运用密度泛函理论(DFT)方法,研究了异构体C60O[6,6]与C60O[5,6]之间的重排反应机理。结果显示: 它们之间的反应路径是经过一个过渡态没有中间体的一步反应。C60O[6,6] 转化成C60O[5,6]的反应能垒是42.7 kcal*mol-1,在反方向,C60O[5,6]转化成C60O[6,6]的反应能垒是47.3 kcal*mol-1,同时,扫描出氧原子在富勒烯C60(Ih)表面的势能面（PEC）,以详细显示异构体C60O[6,6]与C60O[5,6]之间的重排反应机理。     

Bi2Te3/Sb超晶格纳米线的外延生长和热电测量

通过脉冲电沉积,外延生长出小单元长度的Bi₂Te₃/Sb超晶格纳米线.借助哈曼方法,测量了超晶格纳米线阵列的热电性能,330 K时的ZT值可达0.15.研究了Bi₂Te₃/Sb超晶格纳米线阵列器件的制冷或者加热能力,发现器件的上下表面的最大温差可以达到6.6 K.     

Yb~(3+)/Tm~(3+)共掺的硅酸盐玻璃上转换发光性能

采用高温熔融法制备了掺杂不同比例Yb~(3+)和Tm~(3+)的硅酸盐玻璃。吸收光谱表明,Yb~(3+)和Tm~(3+)在300~1 100 nm的吸收过程彼此不干扰。研究了玻璃样品在980 nm LD泵浦下的上转换发光行为,结果表明:Yb~(3+)/Tm~(3+)在477 nm(1G4→3H6)发射强烈的上转换蓝光,在654 nm(1G4→3F4)发射较弱的红光,在795 nm(3H4→3H6)发射微弱的红外光。提高Yb~(3+)的比例均能够提高477 nm蓝光、654 nm红光和795 nm红外光的发射强度。研究分析了上转换发光强度与激光器泵浦功率之间的关系,结果表明上转换蓝光和红光发射均为三个光子过程,红外光发射为两个光子过程。分析了Yb~(3+)、Tm~(3+)在硅酸盐玻璃中上转换发光的机制。     

具有高开启/关断电流比的Al2O3/AlGaN/GaN金属氧化物半导体高电子迁移率晶体管

采用原子层淀积(ALD)方法,制备了Al₂O₃为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT)。在栅压为-20 V时,MOS-HEMT的栅漏电比Schottky-gate HEMT的栅漏电低4个数量级以上。在栅压为+2 V时,Schottky-gate HEMT的栅漏电为191μA;在栅压为+20 V时,MOS-HEMT的栅漏电仅为23.6 nA,比同样尺寸的Schottky-gate HEMT的栅漏电低将近7个数量级。AlGaN/GaN MOS-HEMT的栅压摆幅达到了±20 V。在栅压V_gs=0 V时, MOS-HEMT的饱和电流密度达到了646 mA/mm,相比Schottky-gate HEMT的饱和电流密度(277 mA/mm)提高了133%。栅漏间距为10μm的AlGaN/GaN MOS-HEMT器件在栅压为+3 V时的最大饱和输出电流达到680 mA/mm,特征导通电阻为1.47 mΩ·cm²。Schottky-gate HEMT的开启与关断电流比仅为10⁵,MOS-HEMT的开启与关断电流比超过了10⁹,超出了Schottky-gate HEMT器件4个数量级,原因是栅漏电的降低提高了MOS-HEMT的开启与关断电流比。在V_gs=-14 V时,栅漏间距为10μm的AlGaN/GaN MOS-HEMT的关断击穿电压为640 V,关断泄露电流为27μA/mm。     

利用啁啾脉冲光谱滤波和非线性偏振旋转技术实现高稳定性和开机自启动的全光纤掺Yb~(3+)光纤锁模激光器

建立理论模型,讨论了非线性偏振旋转全光纤锁模激光器的锁模过程、谐波过程以及导致激光器锁模运行难以稳定的影响因素.讨论了采用啁啾脉冲光谱滤波产生脉冲自振幅调制、增加激光器锁模稳定性和自启动能力的机理以及非线性偏振旋转与啁啾脉冲光谱滤波相结合实现锁模的物理过程和脉冲演化过程.研制出全光纤结构的超短脉冲掺Yb~(3+)光纤环形激光器,采用非线性偏振旋转和啁啾脉冲光谱滤波相结合的锁模技术,实现了激光器锁模的开机自启动和高稳定运行.对激光器进行了长期运行稳定性、锁模开机自启动能力、锁模输出参数可重复性监测.锁模脉冲中心波长1052.9 nm,谱宽9.1 nm,脉冲能量4.25 nJ,脉冲宽度17.8 ps.运行期间,各参数波动均小于0.3%.开机自启动能力和可重复性测试显示,激光器可实现一键自启动,启动后各参数可重复精度在0.55%以内.     

闪烁体Y_2SiO_5:Ce的发光特性

Y_2SiO_5:Ce~(3+)(YSO:Ce)具有高密度、不吸潮以及良好的光输出和快速衰减的特性,是一种重要的闪烁材料。研究采用高温固相法制备Y_2SiO_5:Ce~(3+)+0.2%(YSO:Ce)。在低温及室温下,对闪烁体YSO:Ce的时间分辨发射光谱、激发光谱以及衰减曲线进行了测量和分析。YSO:Ce主要有两类发射,一是晶体的缺陷发射,发射中心在320 nm;二是掺杂的Ce~(3+)的5d→4f发射,发射中心在440 nm。只有当激发能量(E_x)大于材料带隙宽度(E_g)时才能够激发出晶体缺陷发射,对应慢速的激发发射过程,且低温时发射强度较大,当温度升高时有温度猝灭,在室温下时间分辨发射光谱中几乎观察不到晶体缺陷发射。对于发射中心位于440 nm Ce~(3+)的5d→4f能级发射,在60~300 nm范围内能够观察到多个激发峰,其中能量小于材料禁带宽度的激发是属于Ce~(3+)5d能级的直接激发带,对应快速的激发发射过程。在低温时能够观测到发光中心位于392和426 nm分立的发射峰,对应Ce~(3+)的5d→4f(~2F_(5/2),~2F_(7/2))的发射。当温度升高到室温时,光谱宽化,无法观测到分立的发射峰。在温度200和300 K时,当激发光的能量大于带隙宽度,衰减曲线有明显的上升沿,说明有能量传递给Ce~(3+)。     

LaF3纳米晶体中 Sm3+/Eu3+能量传递效应的光谱学特性

采用水热合成法,在较低的温度下制备了分散性,均匀性良好的 LaF3∶ Sm3+,LaF3：Eu3+和LaF3∶Sm3+／Eu3+纳米晶体样品。通过 X 射线衍射(XRD),透射电子显微镜(TEM)和光致发光(PL)等手段,分别对 Sm3+／Eu3+单掺和共掺 LaF3纳米晶体的物相,表面形貌,晶粒尺寸和荧光特性进行了表征。XRD 和 TEM 检测结果显示,所制备的 LaF3纳米晶体呈六方晶体相,平均粒径在40 nm 左右。当采用波长为442 nm 的 He-Cd 连续激光器激发 Sm3+／Eu3+共掺 LaF3样品中的 Sm3+时,在样品发射光谱中观测到了Eu3+的特征荧光发射谱线,实现了 Sm3+向 Eu3+的能量传递。采用光谱学研究方法讨论了能量传递的机理和效率。结果表明,能量传递过程是 Sm3+的4 G5／2激发态与 Eu3+的 5 D 1和5 D 0激发态之间的交叉驰豫所致,并且随着 Eu3+的掺杂浓度的增大,共掺 LaF3∶Sm3+／Eu3+样品的发射谱中的 Eu3+的特征荧光发射强度也随之增强,这说明增加受主 Eu3+的掺杂浓度能够有效地提高 Sm3+→Eu3+能量传递的效率。