Nd：YVO4晶体α向生长研究

采用固-液两相混合，使Nd2o3、Y2O3和V2O5在近常温条件下初步合成Nd：YVO4多晶原料，降低固相合成反应温度，减少V2O5在多晶原料制备过程中的挥发。讨论了α方向V单晶生长条件，采用提拉法，以(100)方向进行单晶生长，得到一系列掺杂浓度的Nd：YVO4单晶。     

基于阿贝尔黑格斯变量的杨-米尔斯理论的红外阿贝尔化

通过SU(2)规范场的法捷耶夫-Niemi分解给出了有效阿贝尔-黑格斯型作用量的 一个计算方法. 具体指出了该分解中所用的自然规范固定以及阿贝尔投射与杨-米尔斯理论的红外动力学之间的内在关系. 推导出了色电场的一个伦敦型方程.     

改进中学物理教学适应"3+综合"考试

当代科技发展的主流是综合化、整体化,表现出各学科之间互相渗透、相互交叉的趋势.开展综合测试,有利于打破学科间的隔离状态,给学生提供完整的世界图像;     

膨胀的热夸克胶子物质的中等质量双轻子的增强

基于一个描述夸克胶子火柱演化的相对论流体力学模型,研究了夸克相、强子相互作用以及非热过程(DrellYan对、粲强子衰变)的中等质量双轻子的产生.发现由于相边对夸克胶子物质演化的影响和RHIC能量核碰撞产生的夸克胶子物质具有高的初始温度,夸克相对双轻子的贡献显著增强,比那些来自强子相互作用的贡献重要,甚至能与来自非热的贡献比较.表明中等质量双轻子的增强是一个在核碰撞中产生了夸克胶子物质的可能信号. 关键词： 夸克-胶子物质 双轻子增强 相对论流体力学模型     

Lorentz-Compton佯谬与一个双赢判决性散射实验设计

通过对“可见光区域是否存在Compton效应”的讨论而进一步深化到经典条件下“光的量子理论能否包含光的经典电磁理论”的实验验证,发现了Lorentz-Compton佯谬,并基于逆Compton散射设计了一个敏感而又可行的双赢判决性散射实验来解决此佯谬。     

平面上随机级数的性质

研究了平面上系数{Xn,n≥0}为(?)-混合序列在满足,(q>1)等条件下的随机级数的增长性及值分布,得到了比较好的结果．     

关于PFI-代数与剩余格

本文提出了一种强FI代数-PFI代数,并且深入研究了它的性质,借此进一步揭示了FI-代数和剩余格之间更加密切的联系,进而以FI-代数为基本框架建立了R0-代数、正则剩余格等逻辑系统的结构特征(包括对隅结构)及其相互关系．这种以FI-代数为基础来统一处理剩余格和R0-代数的方法,同样适合于格蕴涵代数和MV代数等代数结构,而且从中更能清楚地看出它们之间的密切联系,也将有助于对相应形式逻辑系统与模糊推理的研究．     

A TVD Type Wavelet-Galerkin Method for Hamilton-Jacobi Equations

In this paper,we use Daubechies scaling functions as test functions for the Galerkin method,and discuss Wavelet-Galerkin solutions for the Hamilton-Jacobi equations.It can be proved that the schemesare TVD schemes.Numerical tests indicate that the schemes are suitable for the Hamilton-Jacobi equations.Furthermore,they have high-order accuracy in smooth regions and good resolution of singularities.     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.     

Growth of NaBi（WO4）2 Dendrite and Mechanism

The solid-liquid interface motion of NaBi（WO4）2 （NBWO） melt crystal growth is observed in an in situ system, in which the whole processes of interface transition from fiat interface and cellular to dendrite are visualized. The spacing of the dendrite under smaller temperature gradient turns out to be larger than that under larger temperature gradient, which is found to be sensitive to the temperature distribution. The mechanism of dendrite growth of NBWO is studied based on the model of the growth units of anion coordination polyhedra. The { 001} face has two apex links, so it shows higher stability and has high growth rate and forms the arm of dendrite, whereas the {010} face has only one apex link, and thus shows relative slower growth rate and firstly forms the branches.