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951.
952.
2-(2-喹啉偶氮)-1,5-苯二酚分光光度法测定烟草样品中的钙 总被引:1,自引:0,他引:1
在 p H为 8.0的柠檬酸钠 -氢氧化钠缓冲介质中 ,Triton X- 10 0存在下 ,2 - (2喹啉偶氮 ) - 1,5苯二酚(QADHB)与钙反应生成 1∶ 1稳定配合物 ,λmax=5 5 5 nm,ε=4 .18× 10 4L· mol-1· cm-1。钙含量在 0 .1—2 5μg/ 2 5 m L的范围内符合比耳定律 ,方法用于烟草中钙含量的测定 ,结果令人满意。 相似文献
953.
在 p H4 .8的邻苯二甲酸氢钾 - Na OH介质中 ,非离子表面活性剂 Tween- 80存在下 ,7- (苯并噻唑 - 2 -偶氮 ) - 8-羟基喹啉 - 5 -磺酸 (BTAQS)与镉形成 2∶ 1的紫红色配合物 ,其最大吸收波长 λmax=5 6 0 nm,表观摩尔吸光系数为 8.71× 10 4L· mol-1·cm-1,镉含量在 0— 6 μg/ 10 m L范围内服从比耳定律。用于矿样中镉的测定 ,相对误差小于 3% ,相对标准偏差小于 2 .5 % (n=5 )。 相似文献
954.
955.
956.
H_2S_2的构型及其异构化的量子化学研究 总被引:1,自引:0,他引:1
采用量子化学中的二阶微扰(MP2)方法,在6-311+G(3df,2p)水平上,利用Gaussian软件优化反应物,过渡态和生成物的几何结构,在相同水平上对反应物,过渡态和生成物进行了频率分析,同时完成了内禀反应坐标(IRC)分析.进而利用过渡态理论,计算了温度在300K时的H迁移异构化反应的速率常数.研究结果表明,H2S2的构型有两种,分别为:线型和分叉型,其中线型HSSH的能量较低,为稳定结构;平衡常数很小,为2.2×10-20,不利于平衡从线型向分叉型异构体转化,反之,分叉型向线型转化较容易,因此分 相似文献
957.
Yu-Long Sui 《Applied Surface Science》2006,252(12):4306-4311
In this study, silica-based organic-inorganic hybrids were prepared by the sol-gel method. Tetraethoxysilane (abbreviated as TEOS) and a kind of monomer (abbreviated as FA-APES) derived from modified 2-furancarboxylic acid (abbreviated as FA) with (3-aminopropyl)triethoxysilane (abbreviated as APES) were used as the inorganic and organic fragments, respectively. Coordination reaction between lanthanides (europium and terbium ions) and CO group of the monomer happened simultaneously. And after days of aging process the resultant materials showed characteristic luminescence of lanthanides. The enhancement of luminescence can be seen by the comparison with simply doped lanthanide hybrid systems. And it can be explained by the coordination ability of the organic counterpart. IR, NMR, UV-vis absorption, low-temperature phosphorescence spectroscopy and fluorescence spectroscopy were applied to characterize and the above spectroscopic data revealed that the triplet state energy of organic ligand matches with the emissive energy level of lanthanides (especially of Tb3+). 相似文献
958.
T. Rajagopalan J.A. Lubguban S. Gangopadhyay J. Sun S.L. Simon R. Butler 《Applied Surface Science》2006,252(18):6323-6331
Hexamethyldisilazane (HMDS) vapor treatment of plasma-damaged nanoporous organosilicate thin films has been studied as a function of treatment temperature in this work. Although, the HMDS vapor treatment facilitated incorporation of methyl (CH3) groups subsequent to the removal of free hydroxyl (OH) groups in the damaged films at treatment temperature as low as 55 °C, the bonded OH groups were not removed. More significantly, detailed analysis of the results reveals that HMDS vapor modified only the surface of the plasma-damaged samples and not the entire film as expected. This is attributed to the formation of a thin solid layer on the surface, which effectively prevents penetration of HMDS vapors into the bulk. The Fourier transform-infrared (FT-IR) absorption and dielectric constant measurements confirm that the vapor treatment assists only partial curing of the plasma-damaged films. Alternative processes of curing the films with HMDS dissolved in supercritical carbon dioxide (SCCO2) as a medium of reaction in static and pulsed modes were also attempted and the results are presented in this paper. 相似文献
959.
Chongjun Zhao Quanzhong Zhao Qitao Zhao Jianrong Qiu Congshan Zhu 《Applied Surface Science》2006,252(20):7415-7421
Au nanoparticles, which were photoreduced by a Nd:YAG laser in HAuCl4 solution containing TiO2 colloid and accompanied by the TiO2 particles, were deposited on the substrate surface. The film consisting of Au/TiO2 particles was characterized by the absorption spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. The adhesion between the film and substrate was evaluated by using adhesive tape test. It was found that the presence of TiO2 dramatically enhanced the adhesion strength between the film and the substrate, as well as the deposition rate of film. The mechanism for the deposition of Au/TiO2 film was also discussed. 相似文献
960.
Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In2O3 films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In2O3:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively. 相似文献