首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   122294篇
  免费   15989篇
  国内免费   12877篇
化学   109061篇
晶体学   2761篇
力学   2593篇
综合类   500篇
数学   14951篇
物理学   21294篇
  2024年   130篇
  2023年   1046篇
  2022年   1668篇
  2021年   2224篇
  2020年   2662篇
  2019年   4163篇
  2018年   3741篇
  2017年   4545篇
  2016年   4895篇
  2015年   6844篇
  2014年   7351篇
  2013年   11534篇
  2012年   8848篇
  2011年   9514篇
  2010年   7753篇
  2009年   8420篇
  2008年   8638篇
  2007年   7978篇
  2006年   7369篇
  2005年   6932篇
  2004年   6005篇
  2003年   5134篇
  2002年   5355篇
  2001年   3337篇
  2000年   3085篇
  1999年   2078篇
  1998年   1360篇
  1997年   1188篇
  1996年   1053篇
  1995年   1006篇
  1994年   921篇
  1993年   733篇
  1992年   663篇
  1991年   505篇
  1990年   358篇
  1989年   314篇
  1988年   258篇
  1987年   205篇
  1986年   161篇
  1985年   193篇
  1984年   157篇
  1983年   77篇
  1982年   135篇
  1981年   135篇
  1980年   115篇
  1979年   95篇
  1978年   74篇
  1977年   67篇
  1976年   47篇
  1973年   35篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
131.
The central question of this paper is the one of finding the right analogue of the Commutant Lifting Theorem for the Bergman space La2. We also analyze the analogous problem for weighted Bergman spaces La2, − 1 < α < ∞.  相似文献   
132.
1. INTRODUCTION In the process of coking plant, about 30%~35% sulfur is transformed to H2S and some other sulfide, which form impurity in coal gas together with NH3 and HCN. Only 0.1% H2S containing in air can lead to die, so it is very important to carry on desulphurization and decyanation with coal gas [1~3]. Currently desulphurization and decyanation craft technique have Dry Oxidation Technology, Wet Oxidation Technology and Liquid Absorption Technology [2] three main kinds. The…  相似文献   
133.
Non-stoichiometric ternary chalcogenides (Zn,Fe)S were prepared in the film form by pyrolytic spray deposition technique, using air/nitrogen as the carrier gas. The precursor solution comprised of ZnCl2, FeCl2 and thiourea. The depositions were carried out under optimum conditions of experimental parameters viz. carrier gas (air/nitrogen) flow rate, concentration of precursor constituents, nozzle substrate distance and temperature of quartz substrate. The deposited thin films were later sintered in argon at 1073 K for 120 min.The structural, compositional and optical properties of the sintered thin films were studied. X-ray diffraction studies of the thin films indicated the presence of (Zn,Fe)S solid solution with prominent cubic sphalerite phase while surface morphology as determined by scanning electron microscopy (SEM) revealed a granular structure.The chemical composition of the resulting thin films as analyzed by energy dispersive X-ray analysis (EDAX) reflected the composition of the precursor solutions from which the depositions were carried out with Fe at% values ranging from 0.4 up to 33.SEM micrographs of thin films reveal that the grain sizes of the thin films prepared using air as carrier gas and N2 as carrier gas are in the vicinity of 300 and 150 nm, respectively.The diffuse transmittance measurements for thin films, as a function of wavelength reveal the dependence of direct optical band gap on Fe content and type of phase.  相似文献   
134.
Thin films of, N-N′diphenyl 1-4phenylene-diamineane are prepared using vacuum sublimation technique. The electrical conductivity from room temperature down to 127 K is studied. It is found that the conduction of charge carriers obeys T−1/2 dependence on temperature. The average hopping distance, hopping energy, density of states and their variation due to post-deposition heat treatment are studied. Schottky diodes are fabricated with gold as ohmic contact and aluminium as Schottky contact. From the observed current voltage characteristics the saturation current density, diode ideality factor and the barrier height are determined. Their variation with air annealing is also investigated.  相似文献   
135.
Ternary-phase ceramic system of Li2O Al2O3 4SiO2 doped with CuO, FeO and TiO2 has been prepared and subjected to dc electrical conductivity and thermally stimulated depolarization current (TSDC) measurements as a function of temperature (30-250 °C) and field strength. The electrical conductivity results are explained by assuming both ionic and electronic conduction mechanisms coexist with different contributions over the whole temperature range of experiments. TSDC spectra have been found to be characterized by a broad intense relaxation peak, which can be attributed to an ionic charge polarization. The broad relaxation transitions are apparently a result of the nonuniform nature of this process. Activation energies are calculated for both dc electrical conductivity and TSDC according to Arrhenius equation and initial rise method, respectively.  相似文献   
136.
DK Choudhury  PK Sahariah 《Pramana》2002,58(4):599-610
We obtain a solution of the DGLAP equation for the gluon at low x first by expanding the gluon in a Taylor series and then using the method of characteristics. We test its validity by comparing it with that of Glück, Reya and Vogt. The convergence criteria of the approximation used are also discussed. We also calculate εF 2(x,Q)2/ε In Q 2 using its approximate relations with the gluon distribution at low x. The predictions are then compared with the HERA data.  相似文献   
137.
 研究了超临界流体CO2在石墨-金刚石转变中的触媒作用。实验中,采用Ag2O作为流体触媒的先驱材料,在7.7 GPa压力下,Ag2O在1 200 ℃分解成Ag和O2,O2与石墨套管在高温高压下反应形成CO2超临界流体。研究结果表明,在7.7 GPa和1 500 ℃以上温度条件下,石墨在CO2流体触媒的作用下可转变为金刚石晶体,在1 500~1 700 ℃温度范围内合成出的金刚石具有完好的八面体形貌,与天然金刚石的生长特征非常相似。  相似文献   
138.
直流磁控溅射一步法原位制备MgB2超导薄膜   总被引:6,自引:1,他引:5       下载免费PDF全文
用MgB2靶,控制直流磁控溅射工作在异常辉光放电或弧光放电状态,在SrTiO3衬底上原位一次性得到了MgB2超导薄膜,其起始转变温度为32K,零电阻温度为15K. 关键词: 高温超导体 超导薄膜 磁控溅射 二硼化镁  相似文献   
139.
新生MnO2对酸性媒介黑T的吸附   总被引:4,自引:0,他引:4  
蒋兰宏 《光谱实验室》2002,19(4):550-553
以化学法合成的新生MnO2为吸附剂,对水中酸性媒介黑T(染料之一)进行了吸附脱色研究,并探讨了影响吸附的因素。结果表明,酸性媒介黑T的脱色率达95%。且PH是影响染料脱色的主要因素。  相似文献   
140.
罗英  何冀川  万怀龙 《光谱实验室》2006,23(5):1099-1102
首次采用分光光度法研究了模拟生理条件(pH 7.4 Tris-HCl缓冲溶液,离子强度I=0.1)下2,7-二氯荧光素与牛血清白蛋白(BSA)相互作用的情况.研究结果表明:两者相互作用形成稳定的复合物,最大吸收波长为509nm,与2,7-二氯荧光素的最大吸收波长502nm比较,红移了7nm;两者之间主要通过静电引力结合,但并不排除疏水作用力和氢键;两者之间的结合数为32.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号