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31.
The influence of the sample orientation on the effective value of the hydrostatic piezoelectric coefficients d h (i) of Sn2P2S6 crystals has been studied. The hydrostatic piezoelectric coefficients d h (1) and d′ h (3) , were measured, d h (1) =(244±3) pC/N and d′ h (3) =(92±1) pC/N. The hydrostatic piezoelectric coefficient d h (3) for orthogonal axis system was calculated to be d h (3) =(87±2) pC/N. The, optimal orientation of the sample has been found as (Xy l)−20°-cut. Maximal value of the effective hydrostatic piezoelectric coefficient d h (1) equals 260 pC/N. Double rotated samples were also studied. The orientation of the samples insensitive to the pressure has been found. The theoretical mean value of hydrostatic piezoelectric coefficient (d h ) mean corresponding to randomly oriented Sn2P2S6 grains in a poled composite has been calculated to be (d h ) mean =136 pC/N.  相似文献   
32.
33.
唐西林  刘仲奎 《数学杂志》1997,17(3):397-403
本文利用逆半群上的同余扩张,讨论了一类逆半群的亚直可约性,并刻划了这类逆半群的幂等元集的特征。  相似文献   
34.
Magnetic Properties of the Cobaltates Na6CoS4, Na6CoSe4, and K6CoS4 The alkali metal cobalt chalcogenides Na6CoS4, Na6CoSe4, and K6CoS4 crystallize in the space group P63mc with Z = 4. The structure is characterized by isolated [CoX4]-tetrahedra. The magnetic susceptibilities show Curie-Weiss behaviour. The deviations at low temperatures are caused by antiferromagnetic interactions. The magnetic moments are discussed with regard to ligand-field parameters.  相似文献   
35.
许多乙酰芳胺类化合物具有优异的生物活性,例如除草剂苯噻草胺,可抑制细胞生长和分裂,防除稻田中禾本科杂草[1];杀菌剂甲霜灵可防治作物霜霉病[2]。本文将具有多种生物活性的嘧啶基团引入到乙酰芳胺结构中[3],合成下列10个未见文献报道的标题化合物Ⅰ,通...  相似文献   
36.
This paper continues the investigation about the singularity theory in dual rich quasi–Banach spaces given in T. Runst [Ru 2]. The abstract results are applied to the study of the solution structure of semilinear elliptic boundary value problems in spaces of Besov – Triebel – Lizorkin type.  相似文献   
37.
Several Pd-catalyzed reactions were explored to further functionalize the bromo-substituted 4-amino-1,2,4,5-tetrahydro-2-benzazepin-3-one scaffold (Aba). We report in this paper suitable reaction conditions for Suzuki, Buchwald-Hartwig, and Heck reactions. The substitution pattern of the starting aminobenzazepinone turned out to be crucial for the success of these transition metal-catalyzed reactions, which often required modifications of standard literature procedures. The Pd-catalyzed methods provide access to novel substitution patterns of the Aba scaffold.  相似文献   
38.
We give a short proof of a generalization of the Rolewicz theorem based on the uniform boundedness principle.

  相似文献   

39.
We present the recent experimental results on the 6He structure studied by the 6Li(t, 3He)6He reaction at 336 MeV. Above the conspicuous peaks for ground and first excited states for 6He, we have observed a broad structures at E x∼ 5 MeV, and E x∼ 15 MeV. The angular distribution of this structure exhibits the dominance of a ΔL = 1 transition, indicating the existence of intruder dipole states at low excitation energies in 6He. A slight admixture of positive-parity states in this structure has been indicated as well. Received: 1 May 2001 / Accepted: 4 December 2001  相似文献   
40.
We prepared high quality Au(1 1 1) film on Si wafer through the spin coating and thermal decomposition of a gold ink, spin-coated-and-fired (SCAF) Au film. The X-ray measurements, XRD and pole-figure analysis, showed that the SCAF Au film has a (1 1 1) out-of-plane orientation with a random in-plane orientation. In order to confirm the chemical activity of the SCAF Au film, we demonstrate the formation of patterned structures with the film by using soft lithography technique. The chemical activities of this physically stable SCAF Au film to the alkanethiols were at least equivalent those of physically deposited the Au films. The possibility of the mass production of micro patterned structure with the SCAF Au film was also demonstrated over the wide region on Si wafer by the microcontact lithography. These suggest that the Au film will help the easy fabrication of various nanosized devices on Si wafer and other substrates.  相似文献   
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