Decomposition Reaction of Zn-MPA（3-Mercaptopropionic Acid） Complex Under Microwave Irradiation

The thermal decomposition of Zn-MPA complex was investigated under microwave irradiation. ZnO and ZnS nanocrystals could be obtained by decomposing Zn-MPA（3-mercaptopropionic acid） complex under different reaction conditions. It was found that both the pH value of the solution and the molar ratio of Zn2＋ and MPA can play an important role in the formation of ZnO and ZnS nanocrystals. MPA mainly acts as an S source or as a complexing agent. This study provides a new route for the controllable preparation of semiconductor nanocrystals.     

Correlation between Irradiation Treatment and Metabolite Changes in Bactrocera dorsalis (Diptera: Tephritidae) Larvae Using Solid-Phase Microextraction (SPME) Coupled with Gas Chromatography-Mass Spectrometry (GC-MS)

The metabolites produced by the larvae of Bactrocera dorsalis (Diptera: Tephritidae) exposed to different doses of irradiation were analyzed using solid phase microextraction (SPME) and gas chromatography-mass spectrometry (GC-MS), and a metabonomic analysis method of irradiated insects based on GC-MS was established. The analysis revealed 67 peaks, of which 23 peaks were identified. The metabolites produced by larvae treated with different irradiation doses were compared by multivariate statistical analysis, and eight differential metabolites were selected. Irradiation seriously influenced the fatty acid metabolic pathway in larvae. Using the R platform combined with the method of multivariate statistical analysis, changes to metabolite production under four irradiation doses given to B. dorsalis larvae were described. Differential metabolites of B. dorsalis larvae carried chemical signatures that indicated irradiation dose, and this method is expected to provide a reference for the detection of irradiated insects.     

激光辐照下转动柱壳平均温度与破坏时间的工程估算

 推导了激光辐照下转动壳体平均温度沿壳体母线方向分布的解析公式。由于对高斯功率密度分布光束无法得到工程上实用的结果,对公式进行了解析拟合,仅由一个具有实际物理意义的拟合系数——分布因子确定了解析拟合公式的形式,明确了温度估算公式中各项的物理意义。解析拟合公式计算结果与数值模拟结果较为一致。作为温升估算方法的一个应用实例,推导了转动充压柱壳在激光辐照下破坏时间的解析公式,与数值计算结果吻合得较好。     

氢化作用对低能电子束辐照下GaN发光演变的影响

结合氢在GaN中的扩散特性,运用阴极荧光（CL）谱,对氢化前后低能电子束辐照下GaN带边发光强度的演变进行了研究.实验发现,氢化前GaN在低能电子束辐照下带边发光强度呈现衰减的趋势,而氢化后带边发射强度先上升后衰减,而且氢化后的衰减比氢化前弱.1 h辐照过程中,氢化后GaN带边发光强度的变化比氢化前要小很多.另外,实验中发现经过氢化处理的GaN在辐照后20 h内没有观察到带边发射强度的恢复.研究表明氢原子在GaN中可以钝化缺陷来增强发光,但这种钝化缺陷的作用必须通过克服高的扩散势垒来实现,而低能电子束可以 关键词： 阴极荧光 低能电子束 氢化 演变     

$lt;i$gt;γ$lt;/i$gt;射线总剂量辐照效应对应变Sip型金属氧化物半导体场效应晶体管阈值电压与跨导的影响研究

分析了双轴应变Si p型金属氧化物半导体场效应晶体管(PMOSFET)在γ射线辐照下载流子的微观输运过程, 揭示了γ射线的作用机理及器件电学特性随辐照总剂量的演化规律, 建立了总剂量辐照条件下的双轴应变Si PMOSFET 阈值电压与跨导等电学特性模型, 并对其进行了模拟仿真. 由仿真结果可知, 阈值电压的绝对值会随着辐照总剂量的积累而增加, 辐照总剂量较低时阈值电压的变化与总剂量基本呈线性关系, 高剂量时趋于饱和; 辐照产生的陷阱电荷增加了沟道区载流子之间的碰撞概率, 导致了沟道载流子迁移率的退化以及跨导的降低. 在此基础上, 进行实验验证, 测试结果表明实验数据与仿真结果基本相符, 为双轴应变Si PMOSFET辐照可靠性的研究和应变集成电路的应用与推广提供了理论依据和实践基础. 关键词： 应变Sip型金属氧化物半导体场效应晶体管 总剂量辐照 阈值电压 跨导     

离散元与壳体有限元结合的多尺度方法及其应用

在深入研究复杂结构和非均质材料冲击响应和破坏机理的过程中,往往遇到多尺度计算问题。本文尝试建立三维离散元与壳体有限元结合的多尺度方法用于处理圆柱壳问题,该方法采用三维离散元对感兴趣的局域进行局部模拟,利用平板壳体有限元进行整体模拟,采用一种特殊的过渡层使离散元区和有限元区能很好的衔接。我们将这一方法应用于激光辐照下充压柱壳的热/力耦合冲击破坏响应,得到的模拟结果与文献报道有较好的吻合。     

熔石英后表面坑点型划痕对光场调制的近场模拟

建立了坑点型划痕的旋转抛物面模型, 用三维时域有限差分方法研究了熔石英后表面坑点型划痕随深度、 宽度、 间距以及酸蚀量变化对波长λ =355 nm入射激光的调制.研究表明, 这类划痕调制最强区位于相邻两坑点的连接区, 且越靠近表面调制越强.当其宽深比为2.0---3.5、 坑点间距约为坑点宽度的1/2时, 可获得最大光场调制, 最大光强增强因子(LIEF)为11.53; 当坑点间距大于坑点宽度时, 其调制大为减弱, 相当于单坑的场调制.对宽为60δ (δ =λ/12), 深和间距均为30δ的坑点型划痕进行刻蚀模拟, 刻蚀过程中最大LIEF为11.0, 当间距小于300 nm时, 相邻坑点由于衍射形成场贯通.     

横向划痕对光场调制的近场模拟

熔石英亚表面划痕对入射激光的近场调制是导致光学元件低阈值损伤的主要因素之一. 用三维时域有限差分方法研究了连续横向划痕的近场分布, 对比了尖锐截面与光滑截面场调制的差异, 着重探讨了光场调制与划痕宽深比R的关系. 研究表明: 酸蚀后的光滑截面有助于减弱近场调制, 这类划痕的R>10.0时调制较弱且相互接近, R<5.0时调制显著增强. 当R取1---3时, 亚表面的调制达最大值, 最大电场幅值为入射波幅值的4.3倍. 当R取1.0---3.5时, 缺陷附近有80%以上取样点的最大电场幅值超过入射波幅值的2倍. 随着深度的增大, 强场区具有明显的"趋肤效应": 位于划痕正下方的强场区首先往左右两侧移动, 然后移向抛物口界面以及水平界面, 同时衍生出的多条增强线诱导整个亚表面层的光场增强.     

Copper (50 MeV) and Oxygen (84 MeV) Ion Irradiation Probed Thermal,Structural and Optical Behavior of Polyethylene Terephthalate

Polyethylene terephthalate (PET) films of 50?μm thickness were exposed to swift-heavy 50?MeV copper and 84?MeV oxygen ions, with fluence varying from 1?×?10¹¹ to 1?×?10¹³ ions cm^?2. Differential scanning calorimetry (DSC), X-ray diffraction (XRD) and Fourier-transform infrared (FTIR) and UV-visible spectroscopic techniques were used to characterize the irradiated samples. The XRD and DSC analysis indicated the loss of crystallinity during/after the irradiation. The FTIR spectra revealed the formation of alkyne end groups, C═C groups and structural deformation with increase of ion fluence. Considerable reduction in the value of the optical bandgap was inferred from the study of the UV-visible absorption curves.