镅污染手套箱系统的去污技术

考虑到手套箱系统的主要污染核素为^239Pu，^241Am，^3H和U，其中^239Pu，^241Am属α长寿命极毒核素，很容易产生放射性气溶胶。在手套箱系统退役过程中，手套箱系统的拆除解体前后均应采用行之有效的方法进行去污，最大限度的减少放射性物质对环境的污染。文中根据可剥离膜去污技术、电解去污技术、导电高分子聚合物导电机理以及超声波去污技术，针对镅污染手套箱拆下部件的污染情况和材质特点，采取单独使用和组合使用的方法进行相应的去污技术研究。     

Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film

Magnetic properties and temperature dependence of electrical transport properties of rare-earth-metal Dy-doped GaN thin film are experimentally studied with a superconducting quantum interference device magnetometer and van der Pauw method. It was found that this thin nitride film has both semiconductor properties and ferromagnetism from 1OK to room temperature. The dopant-band (conducting band due to doping) electron conduction dominates the transport properties of this film at low temperatures. These results indicate that Dy-doped GaN is an n-type ferromagnetic semiconductor at room temperature.     

Raman properties embeddedof GaSb nanoparticlesin SiO2 films

The Raman shifts of nanocrystalline GaSb excited by an Ar^ ion laser at wavelengths 514.5, 496.5, 488.0, 476.5,and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.     

半导体激光自混频干涉式传感器中的干涉与调制

应用F-P模型，阐述了半导体激光自混频干涉式传感器的干涉与调制过程，同时给出了相应的计算．     

HI—V族化合物半导体的高能重离子辐照缺陷研究·

用正电子湮没寿命谱技术研究了2.4×1O15/cm2、2.2×1016/cm2注量的85MeV19F离子辐照N型GaP和1.6×1016/cm 2注量的85MeV19F离子辐照P型InP所产生的辐照缺陷.结果表明:两种注量辐照在GaP中均产生较高浓度的单空位.其浓度随着辐照注量的增大而增加;辐照也在InP中产生较高浓度的单空位.     

Theoretical Analysis of Characteristics of GaxInl—x NyAsl—y／GaAs Quantum Well Lasers with Different Intermediate Layers

Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layero n the band structure, gain and differential gain of GalnNAs/GaAs quantum well lasers have been investigated. The results show that the GaNAs barrier has a disadvantage in increasing the density of states in the conduction band. Meanwhile, the multilayer quantum wells need higher transparency carrier density than the GalnNAs/GaAs single quantum well with the same wavelength. However, they help to suppress the degradation of the differential gain. The calculation also shows that from the viewpoint of band structure, the strain-compensated structure and the strain-mediated structure have similar features.     

一种pH敏感相分离高分子在免疫分析中的应用

将乙肝表面抗体与N-羟基琥珀酰亚胺丙烯酸酯反应，生成丙烯酰基抗体．丙烯酰基抗体与甲基丙烯酸、丙烯酰胺共聚，生成pH敏感的三元共聚物．三元共聚物溶解．沉淀的临界pH值为3．8．三元共聚物上的抗体能与表面抗原、酶标抗体形成夹心复合物．利用三元共聚物可逆的溶解．沉淀特性，能实现在均相条件下，进行免疫反应，在异相条件下，进行免疫复合物的分离．     

Gain Spectrum in an Asymmetric Double Quantum Well

We propose a scheme for light amplification in an asymmetric double quantum well, where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. By applying a single driving laser, the steady state gain can be obtained. The calculated gain spectrum for an asymmetric GaAs/AlGaAs double quantum well structure was presented.     

Fe2O3纳米微粒溶胶非线性光学特性的Z-扫描研究

利用Z扫描技术在透明区域研究了Fe₂O₃纳米微粒水溶胶和表面包覆有机溶胶的非线性光学特性，给出了非线性折射率γ、双光子吸收系数β、自由载流子折射系数σ_r和自由载流子吸收截面σ_ab等重要物理参数，讨论了自由载流子效应对Fe₂O₃纳米微粒非线性特性的影响 关键词：