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671.
SUN Houqian 《原子与分子物理学报》2002,19(3):277-282
Starting from the configuration full optimized by Genetic Algorithm (GA), the melting behaviors of Binary Ni13-xAlx(x=0 to 13) clusters have been investigated by Monte Carlo (MC) simulations with Metropolis algorithm with a n-body Gupta potential. In contrast to bulk, these clusters have smeared first order transitions occurring over a range of temperature. The melting temperature Tm calculated from Lindemanns criterion vary drastically with concentrations x. For most clusters studied, the average energy per atom E, the relative root-mean-square (rms) bond length fluchuation δ and the heat capacity C per atom related to the energy fluctuation of the system change with temperature in the transition region in manners differing from LJ and alkali metal clusters. For Ni12Al, Ni7Al6, Ni6Al7, Ni5Al8 clusters, there are behaviors characteristic of magic number in C, which do not exist in the pure TM clusters. 相似文献
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基于Gruhn-Hess两体势修正模型,用Monte Carlo方法模拟向列相液晶微滴.Gruhn-Hess两体势是空间各向异性的,修正模型的势参数依赖于液晶的弹性常数K11、K22、K33及表面弹性常数K13.假设向列相液晶微滴具有自由表面,在低温下计算分子二阶序参数和切向内禀强度在微滴内不同区域的变化,并与Gruhn-Hess两体势模型一作对比分析.结果表明:附加K13项的修正模型在微滴表面产生内禀锚定,其大小决定了内禀易取向方向及内禀锚定强度的大小,且内禀强度的大小与K33/K11值有关;空间不完整的向列相液晶微滴由内层到外层有序度逐渐降低. 相似文献
674.
Deposition pressure effect on the surface roughness scaling of microcrystalline silicon films 下载免费PDF全文
The scaling behaviour of surface roughness evolution of microcrystalline silicon (μc-Si:H) films prepared by very-high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) has been investigated by using a spectroscopic ellipsometry (SE) technique. The growth exponent β was analysed for the films deposited under different pressures Pg. The results suggest that films deposited at Pg = 70 Pa have a growth exponent β about 0.22, which corresponds to the definite diffusion growth. However, abnormal scaling behaviour occurs in the films deposited at Pg = 300 Pa. The exponent β is about 0.81 that is much larger than 0.5 of zero diffusion limit in the scaling theory. The growth mode of μ c-Si:H deposited at Pg= 300 Pa is clearly different from that of μc-Si:H at Pg = 70 Pa. Monte Carlo simulations indicate that the sticking process and the surface diffusion of the radicals are two key factors to affect the growth mode under different pressures. Under Pg= 300 Pa, β>0.5 is correlated with the strong shadowing effect resulting from the larger sticking coefficient. 相似文献
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Multiple scattering of light by water cloud droplets with external and internal mixing of black carbon aerosols 下载免费PDF全文
The mixture of water cloud droplets with black carbon impurities is modeled by external and internal mixing models.The internal mixing model is modeled with a two-layered sphere(water cloud droplets containing black carbon(BC) inclusions),and the single scattering and absorption characteristics are calculated at the visible wavelength of 0.55 μm by using the Lorenz-Mie theory.The external mixing model is developed assuming that the same amount of BC particles are mixed with the water droplets externally.The multiple scattering characteristics are computed by using the Monte Carlo method.The results show that when the size of the BC aerosol is small,the reflection intensity of the internal mixing model is bigger than that of the external mixing model.However,if the size of the BC aerosol is big,the absorption of the internal mixing model will be larger than that of the external mixing model. 相似文献
677.
针对非平衡态外推边界处理方法在某些条件下发生质量泄漏的问题,结合质量守恒定律对其进行修正,建立一种新的质量守恒型的边界处理格式.其基本思想是在边界处定义一个虚拟密度来修正平衡态分布函数,使得系统质量守恒.以重力作用下的密度场及磁流体模拟问题为例,利用该格式进行分析,讨论质量泄露问题的本质及各种因素的影响.通过对三种典型的流动:二维Poiseuille流、Couette流、Womersley流的模拟,验证该边界格式的计算精度和稳定性. 相似文献
678.
By three-dimensional kinetic Monte Carlo simulations, the effects of the temperature, the flux rate, the total coverage and the interruption time on the distribution and the number of self-assembled InAs/GaAs(001) quantum dot(QD) islands are studied, which shows that a higher temperature, a lower flux rate and a longer growth time correspond to a better island distribution. The relations between the number of islands and the temperature and the flux rate are also successfully simulated. It is observed that for the total coverage lower than 0.5 ML, the number of islands decreases with the temperature increasing and other growth parameters fixed and the number of islands increases with the flux rate increasing when the deposition is lower than 0.6 ML and the other parameters are fixed. 相似文献
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