多失效模式光电系统可靠性建模分析方法北大核心CSCD

系统可靠性建模分析是开展可靠性分配、预计、故障树分析及可靠性优化设计的基础。介绍了一种光电系统可靠性建模分析方法,针对光电系统中部分分系统具有多种失效模式且各失效模式均服从指数分布的特点,依据齐次马尔科夫理论,采用马尔科夫状态转移图方法建立了产品的可靠性模型,并给出解析表达式、数值计算方法和Monte Carlo仿真方法。最后,将其应用于某机载光电系统供电回路的实例分析中。采用两种计算方法及Monte Carlo仿真方法分别进行计算,并将结果进行对比分析,证明了该方法的正确性及可行性。     

Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

The energy deposition and electrothermal behavior of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical simulation.The Monte Carlo simulation results show that the density of heavy ion-induced energy deposition is the largest in the center of the heavy ion track.The time for energy deposition in SiC is on the order of picoseconds.The TCAD is used to simulate the single event burnout(SEB)sensitivity of SiC MOSFET at four representative incident positions and four incident depths.When heavy ions strike vertically from SiC MOSFET source electrode,the SiC MOSFET has the shortest SEB time and the lowest SEB voltage with respect to direct strike from the epitaxial layer,strike from the channel,and strike from the body diode region.High current and strong electric field simultaneously appear in the local area of SiC MOSFET,resulting in excessive power dissipation,further leading to excessive high lattice temperature.The gate-source junction area and the substrate-epitaxial layer junction area are both the regions where the SiC lattice temperature first reaches the SEB critical temperature.In the SEB simulation of SiC MOSFET at different incident depths,when the incident depth does not exceed the device's epitaxial layer,the heavy-ion-induced charge deposition is not enough to make lattice temperature reach the SEB critical temperature.     

复杂混合溶液成分高光谱分析的可行性

采用高光谱技术对复杂混合溶液进行检测分析,同时利用被测物质的吸光度和散射特性信息以提高光谱的信噪比。实验设计了高光谱采集装置,采集生物组织模拟液(Intralipid-10%)的漫反射高光谱图像,并用Monte Carlo方法和漫射近似理论对其进行了正向和反向推导,获得了632nm波长下,Intralipid-10%吸收系数为0.002 0cm-1,与标准参数相对误差为11.1%;约化散射系数为63.35cm-1,与标准参数相对误差为6.49%,基本符合标准参数的误差范围,验证了该高光谱检测系统的准确性。还利用该高光谱系统对不同厂家出品的牛奶、果汁等样本进行了高光谱采集,得到不同样本间差异较传统二维光谱更为明显的结果,充分证明了高光谱方法在复杂混合溶液成分分析中具有很强的可行性。     

外磁场中三维混合自旋Ising系统的磁学性质

用Monte Carlo方法研究了外磁场中自旋-1与自旋-3/2混合三维Ising系统的磁性质.结果表明,系统磁矩随晶场的增强阶梯式减小,由于能量简并的解除,外磁场存在时磁矩随晶场变化的台阶数目增多.当单离子晶场DA与DB在同一台阶区域取值时,系统磁矩随外磁场的增强平缓地趋于饱和值,而当二者在不同台阶区域取值时,系统磁矩随外磁场的变化则表现出了较明显的台阶结构.单离子晶场DA与DB对于系统无序相的影响是不同的.     

Monte Carlo方法模拟非直视紫外光散射覆盖范围

针对大气中紫外光散射通信的特点, 用Monte Carlo方法对紫外光非直视(NLOS) 通信三种工作方式的覆盖范围进行分析, 建立了基于Monte Carlo方法的NLOS紫外光传输模型.利用Monte Carlo模拟方法对三种NLOS散射方式的单次和多次散射路径损耗及覆盖范围进行模拟研究, 结果表明, 多次散射和单次散射的路径损耗基本一致, NLOS(a) 类全向发送全向接收通信方式覆盖范围最小但全方位性好, NLOS(b) 类定向发送全向接收通信方式的覆盖范围较大但有一定方向性, NLOS(c) 类定向发送定向接收通信方式的覆盖范围最大但有很强的方向性.     

Simulation study of neutrino nucleus cross section measurement in a segmented detector at a spallation neutron source

Knowledge of ν_e-Fe/Pb differential cross sections for ν_e energy below several tens of MeV scale is believed to be crucial in understanding supernova physics. In a segmented detector at a spallation neutron source, ν_e energy reconstructed from the electron range measurement is strongly affected because both multiple scattering and electromagnetic showers occur along the electron passage in target materials. In order to estimate these effects, a simulation study has been performed with a cube block model assuming perfect tracking precision. The energy spectrum distortion is observed to be proportional to the atomic number of the target material. Feasibility of unfolding the distorted ν_e energy spectrum is studied for both Fe and Pb. An evaluation of the statistical accuracy attainable is therefore provided for a segmented detector.     

Monte Carlo simulation of glandular dose in a dedicated breast CT system

A dedicated breast CT system (DBCT) is a new method for breast cancer detection proposed in recent years. In this paper, the glandular dose in the DBCT is simulated using the Monte Carlo method. The phantom shape is half ellipsoid, and a series of phantoms with different sizes, shapes and compositions were constructed. In order to optimize the spectra, monoenergy X-ray beams of 5-80 keV were used in simulation. The dose distribution of a breast phantom was studied: a higher energy beam generated more uniform distribution, and the outer parts got more dose than the inner parts. For polyenergtic spectra, four spectra of Al filters with different thicknesses were simulated, and the polyenergtic glandular dose was calculated as a spectral weighted combination of the monoenergetic dose.     

Monte Carlo simulations for 20 MV X-ray spectrum reconstruction of a linear induction accelerator

To study the spectrum reconstruction of the 20 MV X-ray generated by the Dragon-I linear induction accelerator, the Monte Carlo method is applied to simulate the attenuations of the X-ray in the attenuators of different thicknesses and thus provide the transmission data. As is known, the spectrum estimation from transmission data is an ill-conditioned problem. The method based on iterative perturbations is employed to derive the X-ray spectra, where initial guesses are used to start the process. This algorithm takes into account not only the minimization of the differences between the measured and the calculated transmissions but also the smoothness feature of the spectrum function. In this work, various filter materials are put to use as the attenuator, and the condition for an accurate and robust solution of the X-ray spectrum calculation is demonstrated. The influences of the scattering photons within different intervals of emergence angle on the X-ray spectrum reconstruction are also analyzed.     

Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

In this paper,we investigate the performance of the bulk fin field effect transistor(FinFET) through a threedimensional(3D) full band Monte Carlo simulator with quantum correction.Several scattering mechanisms,such as the acoustic and optical phonon scattering,the ionized impurity scattering,the impact ionization scattering and the surface roughness scattering are considered in our simulator.The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work.Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.     

钛电极苯酚降解反应动力学的Monte Carlo模拟

应用Monte Carlo方法,结合化学反应随机过程理论,模拟钛电极上苯酚电催化氧化反应机理,研究苯酚降解时间、初始浓度、电极的催化性能及反应中间产物对降解过程的影响.结果表明:苯酚浓度随时间变化逐渐降低并渐趋稳定,苯酚初始浓度较高时降解速率快,具有较高催化性能的电极对降解第1步反应的影响较大,可有效减少中间产物停留时间,但控制第1步反应则对降解过程尤其是第2步反应的产物有明显影响,而控制第2步反应对降解过程影响很小.