组合刻蚀法制备窄带滤光片列阵

介绍了组合刻蚀法制备窄带滤光片列阵的基本原理和制备工艺,这是一种效率非常高的制备方法,只需N次刻蚀就可以完成2N通道窄带滤光片列阵的制备,而且可以用于制备不同波段窄带滤光片列阵。展示了可见-近红外波段32通道窄带滤光片列阵和中红外波段16通道窄带滤光片列阵的实验结果,其中32通道窄带滤光片列阵的带通峰位基本呈线性分布在774.7~814.2 nm之间,所有滤光片的半峰全宽都非常窄(δλ<1.5 nm),相应于δλ/λ<0.2%,半峰全宽最窄的滤光片达到0.8 nm,相应于δλ/λ<0.1%,其带通峰位λ=794.3 nm;各通道的带通透过率在21.2%~32.4%之间,大部分在30%左右。     

A MOCVD-Growth Multi-Wavelength Laser Monolithically Integrated on InP

We present an arrayed waveguide grating multi-wavelength laser （MWL）. The device is operated with five wave- length channels of 194 GHz spacing around a central wavelength of 1.57μm. A side mode suppression ratio of better than 35 dB for all channels is demonstrated. A very attractive feature of the MWL is that it has been realized by a novel one step regrowth approach to achieve a high quality active and passive interface.     

小型化第三代移动通信系统用高温超导滤波子系统的研制

本文研究了双向螺旋型谐振器的耦合特性,并采用此谐振器设计、制作了适用于第三代移动通信系统的8节高温超导滤波器.该滤波器中心频率为1950 MHz,带宽为60 MHz.滤波器完成制备后,采用集成封装方式,将其与低温低噪声放大器封装在同一金属盒内,实现了滤波器系统的小型化.文章研究了集成封装方式的尺寸、结构对滤波器性能的影响.测试结果表明,采用集成封装方式的滤波器系统具有优良性能,与独立封装方式相比,器件的总尺寸减小了20%以上.     

Research on surface photovoltage spectroscopy for GaAs photocathodes with AlxGa1-xAs buffer layer

Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1-x As buffer layer are determined in order to effectively measure the body parameters for transmission-mode (t-mode) photocathode materials before Cs-O activation.Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1-x As/GaAs structure material.This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures.It also helps study various doping structures and optimize structure designs in the future.     

Wafer-Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers

A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efflcient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 6Ohm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements.     

CMOS vision sensor with integrated into low fully digital image process power 1/8-inch chip

A digital still camera image processing system on a chip, different from the video camera system, is pre- sented for mobile phone to reduce the power consumption and size. A new color interpolation algorithm is proposed to enhance the image quality. The system can also process fixed patten noise （FPN） reduction, color correction, gamma correction, RGB/YUV space transfer, etc. The chip is controlled by sensor regis- ters by inter-integrated circuit （I2C） interface. The voltage for both the front-end analog and the pad cir- cuits is 2.8 V, and the volatge for the image signal processing is 1.8 V. The chip running under the external 13.5-MHz clock has a video data rate of 30 frames/s and the measured power dissipation is about 75 roW.     

低热应力热稳定曲线型阵列波导光栅复用器

相对方形阵列波导光栅波分复用器芯片而言,采用曲线切割的复用器芯片可以成倍地增加单个晶圆上的复用器产出率,但是曲线切割复用器的中心波长更加容易受到热应力的影响,该热应力是由于封装盒与耦合到复用器芯片上的带状光纤之间的线膨胀系数差异所引起的.本文实验分析了封装热应力对复用器中心波长的影响,结果表明,封装热应力与复用器中心波...