Ni^2＋：LiNbO3的光学吸收谱和EPR的研究

应用三角晶场中d^2(d^8)电子组态的包括静电相互作用和自旋－轨道耦合相综合利用物强场能量矩阵,采用完全对角化方法,精确地计算了具有C3V对称的Ni^2 :LiNbO3的光学吸收谱和EPR谱。理论结果与实验值符合得很好。     

镍中氢与缺陷互作用的正电子寿命和多普勒展宽研究

采用正电子寿命和多普勒展宽技术研究了退火、回复及冷轧镍中氢与缺陷的互作用．结果表明：冷轧镍充氢后正电子平均寿命和多普勒展宽S参数上升，并且寿命谱的两成分拟合出现一个390ps的长寿命分量；而退火及回复镍充氢后正电子平均寿命和多普勒展宽S参数均不改变．因此认为冷轧镍充氢后正电子参数（平均寿命和S参数）的上升取决于氢和空位的互作用，与氢和位错的互作用无关；氢空位对也可以作为聚集空位的核心 关键词：     

非晶态镍钨合金电镀工艺

非晶态镍钨合金由于具有长程无序，短程有序，无晶界、无位错，而具有极为优异的化学、物理和机械性能。非晶态镍钨合金镀层的结构致密，硬度高，耐热性好，尤其在高温下耐磨损、抗氧化，更能显示出其优良的自润滑和耐蚀性能。     

La0.67Pb0.33MnO3的磁性及输运特性

利用固相反应烧结法制备了La067Pb033MnO3单相多晶样品.研究了其结构、磁性及输运特性.结果表明，样品呈菱面相晶体结构，空间群为R3C，居里温度TC(=353K)非常接近TMI(=360K).在居里温度附近，发生铁磁-顺磁转变，导电特性由金属特征向半导体特征过渡.磁电阻在居里点达到极大值.当H=16T时，磁电阻的极大值为145%；当H=08T时，磁电阻的极大值为9%.输运性质表明，TTMI时 关键词： 磁电阻 输运特性 磁极化子 钙钛石     

Structural Evolution of Nanostructured γ—Ni—28Fe Alloy Investigated by Using the Internal Friction Technique

The structural evolution of nanostructured γ-Ni-28Fe alloy(n-Ni-Fe)(grain size d-30nm),synthesized by the mechno-chemical method,was investigated by using the internal friction technique combined with differential scanning calorimetry(DSC) in the temperature range from 300K to 670K.An internal friction peak with typical characteristics of the first-order phase transition was observed in the vicinity of 620K,which corresponds to a broad exothermic process revealed by using DSC.Theses results can be explained as the structural changes from the disordering to the ordering transition in the n-Ni-Fe sample.     

Effect of Metallic Film in Diamond Growth from an Fe—Ni—C System at High Temperature and High Pressure

The metallic film surrounding a diamond single crystal,which plays an important role the diamond growth from and Fe-Ni-C system,has been successfully investigated by using transmission-electron microscopy(TEM),Raman layer(near diamond)of the film by TEM and Raman spectroscopy,but a parallel relationship exists between the(111) plane of γ-(Fe,Ni) and the (100) plane of (Fe2Ni)3C in this region.Compared with that of the film has an increase of 0.9V.According to the microstructures on the film obtained by the TEM.Raman spectra,and XPS,the catalytic mechanism of the film may be assumed as follows.In the surface layer of the film,iron and nickel atoms in the γ-(Fe,Ni) lattice can absorb carbon atoms in the (Fe,Ni)3C lattice and make them transform to an sp^3-like state.Then carbon atoms with the sp^3-like structure are separated from the (Fe,Ni)3C and stack on the growing diamond crystal.This study provides a direct evidence for the diamond growth from a metallic catlayst-graphite system under high temperature and high pressure.     

类镍W46+、Au51+偶极跃迁的相对论多组态计算

本文基于全相对论Dirac-Fock方法,分别用GRASP0和GRASP2原子结构程序包计算了金和钨的类镍离子3d10-3d94p、3d10-3d94f、3p63d10-3p53d104s和3p63d10-3p53d104d之间的电偶极跃迁波长和振子强度,得到与实验相一致的结果;同时分析了组态相互作用和有限核体积分布效应对高Z高剥离态多荷电离子的原子结构参数的影响.     

直流磁控溅射沉积含He钛膜的研究

研究了用He/Ar混合溅射气体的直流磁控溅射制备钛膜中，He的掺入现象.分析结果表明，大量的He原子（He/Ti原子比高达56%）被均匀地引入到Ti膜中，其He含量可由混合溅射气体的He分量精确控制.通过调节溅射参数，可实现样品中He的低损伤引入.研究还发现，溅射沉积的含氦Ti膜具有较高的He成泡剂量和高的固He能力，这可能是溅射沉积形成了纳米晶Ti膜所致.纳米晶Ti膜较粗晶材料具有很高浓度的He捕陷中心，使He泡密度增大而泡尺寸减小.随He引入量的增加，Ti膜的晶粒尺寸减小，He引起的晶体点阵参数和X射线衍射峰宽度增大，晶体的无序程度增加.Helium trapping in the Ti films deposited by DC magnetron sputtering with a He/Ar mixture was studied. He atoms with a surprisingly high concentration (He/Ti atomic ratio is as high as 56%)incorporate evenly in deposited film. The trapped amount of He can be controlled by the helium partial amount. The introduction of the helium with no extra damage(or very low damage) can be realized by choosing suitable deposition conditions. It was also found that because of the formation of nanophase Ti film a relative high He flux for bubble formation is needed and the amount of the retain He in sputtering Ti films is much higher than that in the coarse grain Ti films. The nanophase Ti film can accommodate larger concentration of trapped sites to He, which results in a high density and small size of the He bubbles. With the increasing He irradiation flux, the grain size of Ti film decreases and the lattice spacing and width of the X ray diffraction peak increase due to the He introduction, and the film tends to amorphous phase.     

退火工艺对ICF靶用冷轧镍膜的影响

 为了满足惯性约束聚变（ICF）和状态方程（EOS）实验以及靶装配工艺的需要,在薄膜轧制过程中间以及轧制工艺完成以后需要对镍膜进行热处理来改善其组织结构和力学性能。对多辊轧机冷轧的方法制备的厚11 mm镍膜中间退火工艺进行了研究,根据确定的合适的退火工艺退火后继续轧制得到成品镍膜厚7 mm,表面粗糙度小于50 nm,基本满足目前状态方程实验对箔膜的要求。金相显微照片表明镍膜晶粒经500 ℃保温1 h退火由轧制前的条带状变为等轴晶;镍膜硬度经500 ℃退火后由4 GPa降低到了2.3 GPa左右;XRD衍射测试表明镍膜经500 ℃以上温度退火后,高角度的衍射峰开始出现,织构得到一定程度的改善。由此可以确定镍膜合适的中间退火温度为520 ℃保温1 h。     

类镍等电子系列离子M1,M2,E2禁戒跃迁特性的理论研究

利用基于全相对论框架下的多组态Dirac-Fock理论方法发展起来的程序包GRASP92和新发展的处理辐射跃迁过程的程序REOS99,计算了类镍等电子系列离子(Z=45-95)的基组态3s23p63d10 1S0以及低激发组态3s23p63d94l,3s23p53d104l和3s3p63d104 l(l=s,p,d,f)的能级及其向基态的M1,M2,E2禁戒跃迁概率.通过分析高离化类镍离子在特定的原子序数范围内由于存在能级交叉而产生的强组态相互作用,解释了高离化类镍离子禁戒跃迁概率的反常变化现象,探讨了禁戒跃迁概率受强组态相互作用影响而变化的一般规律.