薛定谔猫态的产生与探测及其对Jaynes-Cummings模型的影响

利用大失谐情况下的简并喇曼过程和双光子Jaynes-Cummings模型来产生电磁场中的宏观量子叠加态,即薛定旋风谔猫态,并探讨如何用零频检测的方法来探测这些态。研究了当电磁场初态为薛定谔猫态时,对强度耦合的Jaynes-Cummings模型中原子反转的崩塌与再生现象的影响,将在以相干态为初态所产生的原子反转的崩塌区产生不同程度的再生现象。 关键词：     

不用Kirchhoff—Love假定的三维弹性板近似理论及其边界条件

红典弹性板理论采用了著名的克希霍夫（Ｋｉｒｃｈｈｏｆｆ）－拉甫（Ｌｏｖｅ）的经典基本假定，在卡氏张量坐标ｘｉ（ｉ＝０，１，２）中，这些基本假定是：（１）略去横向即Ｘ０轴向正应变，即假定ｅ００＝０；（２）略去横向剪应变，即假定ｅ０ａ＝０，其中ａ＝１，２；（３）略去横向正应力，即假定σ００＝０。人们利用这些假定，建立了应变位移关系和应力位移关系，再利用应力平衡的三维方程，通过跨厚度的积分，找到弹性板中     

Sansalvamide A固相合成新方法

报道了Pd催化丁基二乙基硅烷树脂与N-Boc-4-溴代苯丙氨酸甲酯直接反应形成Si—Ar键一步构建出硅基连接分子的新方法, 并采用Boc策略增长肽链, 以PyBOP (benzotriazole-1-yl-oxy-tris-pyrrolidino-phosphonium hexafluoro- phosphate)为环合剂固相合成了sansalvamide A.     

Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

两类整函数的素性

本文就用Nevanlinna理论研究了两类整函数的素性，所得结果推广了Prokopovich和华歆厚的有关定理。     

当△=AC—B^2=0时,对二元函数极值的探讨

设二元函数f(x,y)有稳定点P(x_0,y_0),并设f_(xx)(x_0,y_0)=A,f″_(xy)(x_0,y_0)=B,f″_(yy)(x_0,y_0)=C,△=AC-B~。当△=AC-B~2=0时,f(x,y)在点P(x_0,y_0)处是否有极值的问题,一般教科书都未进行过具体地讨论,本文对这一问题进行了初步地探     

厄米—双曲余弦—光斯光束的瞄准稳定性

用失调叠加积分的方法，对厄米－双曲余弦－高斯光束的瞄准稳定性作了研究，得到了厄米－双曲余弦－高斯光束失调因子|ηm|^2的精确解析公式和近似解析公式，并用数值计算了相对横向偏移和相对角向偏移对失调因子|ηm|^2的影响以及对精确解析公式和近似解析公式的适用范围作了分析和说明。     

关于局部对称空间中2-调和子流形

本文研究局部对称完备黎曼流形中的紧致2－调和子流形，得到了这类流形第二基本模式长平方的Pinching定理及推广的J．Simons型积分不等式。     

Exciton—Phonon Scattering in CdSe／ZnSe Quantum Dots

A temperature-dependent photoluminescence measurement is performed in CdSe/ZnSe quantum dots with a ZnCdSe quantum well.We deduce the temperature dependence of the exciton linewidth and peak energy of the zero-dimensional exciton in the quantum dots and two-dimensional exciton in the CdSe wetting layer.The experimental data reveal a reduction of homogeneous broadening of the exciton line in the quantum dots in comparison with that in the two-dimensional wetting layer,which indicates the decrease of exciton and optical phonon coupling in the CdSe quantum dots.