Low Density Self-Assembled InAs/GaAs Quantum Dots Grown by Metal Organic Chemical Vapour Deposition

The self-assembled InAs quantum dots （QDs） on GaAs substrates with low density （5×10^8 cm^-2） are achieved using relatively higher growth temperature and low InAs coverage by low-pressure metal-organic chemical vapour deposition. The macro-PL spectra exhibit three emission peaks at 1361, 1280 and 1204nm, corresponding to the ground level （GS）, the first excited state （ES1） and the second excited state （ES2） of the QDs, respectively, which are obtained when the GaAs capping layer is grown using triethylgallium and tertiallybutylarsine. As a result of micro-PL, only a few peaks from individual dots have been observed. The exciton-biexciton behaviour was clearly observed at low temperature.     

铟(Ⅲ)-向红菲啰啉络合物的吸附伏安法研究

运用1 5次微分伏安法 ,常规溶出伏安法及循环伏安法研究了铟(Ⅲ) -向红菲啉络合物在汞电极上的电化学行为 ,讨论了络合物的形成机理及条件 ,建立了测试痕量铟的新方法 ,运用该法对样品中痕量铟进行了测试 ,结果令人满意。     

7—（1—苯偶氮）—8—羟基喹啉—5—磺酸显色双波长吸光光 …

研究了７－（１－苯偶氮）－８－羟基喹啉－５－５磺酸与铟的显色反应及分析应用，在曲拉通Ｘ－１００存在下，于ｐＨ４．５的ＮａＯＡｃ－ＨＯＡｃ缓冲介质中，铟与显色剂组成比为１：３的黄色配合物，最大吸收波长为４４０ｎｍ，表现摩尔吸光系数为３．８６×１０＾４，同时在５５０ｎｍ呈现负峰，用双峰双波长法测定铟，ε＝７．３３×１０＾４，线性范围为０￣０．６ｍｇ·Ｌ＾－１，方法用于硫化锌基颜料中铟的测定，结果满意。     

Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes （LEDs）

The reasons for low output power of AlGaInP Light Emitting Diodes (LEDs) have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency (EQE) has serious impaction on the internal quantum efficiency (IQE), because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.     

有机镓、铟芳酰腙配合物的制备与结构表征

通过芳酰腙与三甲基镓或三甲基铟的反应,制备得到了七个有机镓或铟的镓芳酰腙配合物,在配合物中金属直接与芳酰腙的氧和烯胺氮成键,形成五元环状分子内配合物。对得到的化合物通过元素分析、红外光谱、质子核磁共振和质谱进行了结构表征。     

TiO2纳米粒子增强的光纤损失模式共振折射率传感器

以多模光纤为基底来实现损失模式共振(LMR)折射率传感的灵敏度较低,在利用铟锡氧化物(ITO;In₂O₃和SnO₂的质量分数分别为90%和10%)激发光纤LMR传感的基础上,在ITO薄膜上静电组装二氧化钛(TiO₂)纳米粒子,实现折射率灵敏度的提升。使用Kretschman结构模型对传感器进行理论分析,仿真分析了LMR共振阶数与ITO薄膜厚度的关系,以及ITO作为LMR膜层实现折射率传感的可行性。通过在光纤侧壁磁控溅射ITO薄膜以产生LMR效应,制备ITO-LMR折射率传感器。通过折射率传感实验对ITO-LMR和TiO₂-ITO-LMR两种传感器进行性能测试,在1.3333～1.3840的折射率变化范围内,TiO₂-ITO-LMR传感器灵敏度可达1651.659 nm/RIU,相较于ITO-LMR折射率传感器,其灵敏度提升了3.058倍。     

铟（Ⅲ）—PMBP—Ferron极谱络合吸附波研究

在ＨＣｌ－ＮａＡｃ介质（ＰＨ２．５）中，可获得灵敏的Ｉｎ（Ⅲ）－ＰＭＢＰ－Ｆｅｒｒｏｎ极谱络合中附波，峰电位在－０．６５Ｖ处（ｖｓ．ＳＣＥ）检出限为０．０４ｎｇ／ｍＬＩｎ。峰电流与铟浓度在０．０８－２００ｎｍｇ／ｍＬ范围内呈一性关系。本法测定工业废水中的痕量铟，结果满意。本文还研究了极谱波的性质和机理。     

Influence of O2 Flux on Compositions and Properties of ITO Films Deposited at Room Temperature by Direct-Current Pulse Magnetron Sputtering

Indium tin oxide （ITO） films were deposited on glass substrates at room temperature by dc pulse magnetron sputtering. Varying 02 flux, ITO films with different properties are obtained. Both x-ray diffractometer and x-ray photoelectron spectrometer are used to study the change of crystalline structures and bonding structures of ITO films, respectively. Electrical properties are measured by four-point probe measurements. The results indicate that the chemical structures and compositions of ITO films strongly depend on the O2 flux. With increasing O2 flux, ITO films display better crystallization, which could decrease the resistivity of films. On the contrary, ITO films contain less O vacancies with increasing O2 flux, which could worsen the conductive properties of films. Without any heat treatment onto the samples, the resistivity of the ITO film could reach 6.0 × 10^-4 Ω·cm, with the optimal deposition parameter of 0.2 scem O2 flux.     

半导体氮化铟(InN)的电学性质

本文总结了近年来半导体InN薄膜材料(主要是六方纤锌矿结构的InN及异质结构)的电学性质研究进展,重点内容为InN的载流子浓度和迁移率,造成InN中高电子浓度现象的施主分析、载流子输运特性及表面、界面特性等。同时也涉及了部分立方闪锌矿结构InN的电学特性和InN在器件(主要是高电子迁移率晶体管器件)上的潜在应用。     

基于银/高纯铟复合膜的表面等离子体共振折射率传感器

为了解决单一金属膜结构的光纤表面等离子体共振（SPR）盐度传感器结构不稳定且灵敏度较低的问题,设计了一种高灵敏度的锥形三芯光纤结构的SPR盐度传感器。以银膜为激发表面等离子体共振的金属层,在其表面涂覆高纯铟以增强其稳定性。通过Kretschmann四层结构模型对传感器进行理论分析,结果表明,在光纤锥区纤芯模和包层模之间会出现强烈的模式耦合,在覆膜区会激发明显的等离子体共振。对涂覆银膜和高纯铟膜的SPR传感器进行折射率性能测试,在1.4%～3.6%的盐度变化范围内,涂覆银膜和高纯铟膜的SPR传感器灵敏度高达4989.34 nm/RIU,对应的盐度灵敏度为9.1 nm/%,比仅涂覆银膜的SPR传感器灵敏度提高了44%。