Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes （LEDs）

The reasons for low output power of AlGaInP Light Emitting Diodes (LEDs) have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency (EQE) has serious impaction on the internal quantum efficiency (IQE), because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.     

TMIn流量对GaN基蓝光LED外延薄膜的影响

以蓝宝石(Al2O3)为衬底,采用有机金属化学气相沉积(MOCVD)技术生长InGaN/GaN多量子阱结构.本文通过调整外延生长过程中三甲基铟(TMIn)流量,研究了TMIn流量对InGaN/GaN多量子阱结构的合金组分、晶体质量和光学性质的影响.本文采用高分辨X射线衍射(HRXRD)、原子力显微镜(AFM)和光致发光(PL)测试表征其结构和光学性质.HRXRD测试结果表明,随TMIn流量增加,"0"级峰与GaN峰之间角偏离增大,更多的In并入薄膜中.HRXRD与AFM表征结果表明:增大TMIn流量会导致外延薄膜中的位错密度增大,V形坑数量增加,晶体质量严重恶化;PL测试结果表明,随着TMIn流量增加,发光强度逐渐降低,半高宽增大,这是由于晶体质量恶化所导致.因此严格控制铟源流量对于改善量子阱薄膜的晶体质量与光学性质有着至关重要的作用.     

单轴应变对氮化铟电子结构及光学性质的影响

采用密度泛函理论框架下的第一性原理平面波赝势方法,计算单轴应变下闪锌矿氮化铟的电子结构及光学性质.结果表明：施加应变会使带隙变窄.对于拉应变,随着应变增大带隙减小程度增大;对于压应变,随应变增大带隙减小程度减弱;且拉、压应变对带隙调控都是线性的.在能量区间4 eV~12 eV范围内施加应变时,氮化铟的吸收光谱发生红移,随拉应变程度增加,吸收光谱的红移进一步加大;随压应变增加,吸收光谱红移减弱;在该范围内,氮化铟的折射率、反射率随拉应变的增大而增加,随压应变增加减小;施加拉应变时能量损失函数峰值增大,施加压应变后能量损失函数峰值减小.通过施加单轴应变能有效调节氮化铟材料的电结构及光学性质.     

Effect of Indium and Antimony Doping on SnS Photoelectrochemical Solar Cells

Single crystals of pure SnS, indium （In） and antimony （Sb） doped SnS are grown by the direct vapor transport technique. Two doping concentrations of 5 at. % and 15 at. % are employed for both In and Sb dopants. In total, five samples are studied, i.e., pure SnS, 5at.% In-doped SnS, 15at.% In-doped SnS, 5at.% Sb-doped SnS and 15at.% Sb-doped SnS single crystals. The energy dispersive analysis of x-ray （EDAX） and x-ray diffraction （XRD） analysis show that all the five as-grown single crystal samples possess near perfect stoichiometry and orthorhombic structure, respectively. The doping of In and Sb in SnS is established from the EDAX data and from the shift in the peak positions in XRD. Photoeleetroehemical （PEC） solar cells are fabricated by using the as- grown single crystal samples along with iodine/iodide electrolytes. Mott-Schottky plots for different compositions of iodine/iodide electrolytes show that O. 025 M 12 ＋ 1 M Nal＋2 M Na2 S04 ＋0.5 M 1-12 S04 will be the most suitable electrolyte. Study of efficiency （η） and fill factor for different intensities of illuminations at room temperature is carried out for the five samples. The In-doped SnS single crystals show better PEC efficiency than the undoped and Sl〉doped SnS single crystals.     

尖晶石型LiMn2-xInxO4(x=0，0.01，0.02，0.05)的合成及电化学性能研究

以醋酸锰、氢氧化锂和三氧化二铟为原料,以柠檬酸为配位剂,采用溶胶-凝胶法制备了掺杂In的尖晶石LiMn2-xInxO4(x=0,0.01,0.02,0.05),采用XRD、SEM对目标材料进行了结构和形貌表征,采用恒流充放电、循环伏安(CV)以及交流阻抗(EIS)谱测试对材料进行了电化学性能表征,考察了不同In掺杂量对材料性能的影响。结果表明,当In掺杂量为1%时,LiMn1.99In0.01O4样品具有纯的尖晶石锰酸锂结构,在0.5C和3.4～4.35 V电压范围条件下,LiMn1.99In0.01O4的初始放电容量为119.9 mAh.g-1,经过1C 30次,2C 30次,再0.5C 5次循环后,其放电容量保持率为84.9%,显示了良好的电化学性能。掺杂1%的In的样品比未掺杂的样品具有更优的高温循环稳定性能。     

Asymmetric Binary-Acid Catalysis in the Inverse-Electron-Demanding Hetero-Diels-Alder Reaction of 3,4-Dihydro-2H-Pyran

研究了双酸催化剂不对称催化烯醚和β,γ-不饱和α-酮酸酯的反电子Hetero-Diels-Alder（HDA）反应,为手性合成3,4-二氢-2H-吡喃类化合物提供了一种新的催化合成方法.InBr3与手性磷酸钙盐Ca（1c）2组合的手性双路易斯酸催化体系能够有效催化3,4-二氢-2H-吡喃和β,γ-不饱和α-酮酸酯的反电子HDA反应,反应给出优秀的产率（最高达98%）,中等到良好的非对映选择性（最高达89∶11）和良好到优秀的对映选择性（最高可达94%）.并且该双酸催化体系也能成功实现其它烯醚（如：2,3-二氢-2H-呋喃,乙烯基乙醚）的HDA反应,获得优秀的非对映选择性（〉94∶6）和良好的对映选择性.     

氘氘中子产额铟活化诊断方法

提出了活化法测量DD中子产额的实验方法,该方法可提高DD中子产额测量的精度。方法基于铟同位素115In与DD中子的非弹性散射反应,活化反应释放的射线被HPGe探测器记录,根据活化系统标定灵敏度推算出中子产额。分析了探测器记录的活化射线数与中子产额间的关系。介绍了一套活化测量的系统设计。通过蒙特卡罗方法模拟了活化样品出射的射线数与样品厚度的关系,模拟结果表明:样品厚度取为1 cm可兼顾活化效率和测量精度。在加速器上对铟活化样品进行了标定实验,实验结果表明:在聚变中子产额大于2109的实验中可使用铟活化诊断方法,中子产额测量的相对标准误差在10%以内。随着聚变中子产额的不断提高,铟活化测量中子产额的精度可进一步提高。     

In和过渡金属离子共掺杂对ZnO晶体形貌的影响

采用水热法,KOH作矿化剂,在ZnO前驱物中添加适量的CoCl2·6H2O,FeCl2·4 H2O,NiCl2·6H2O,In2O3,其中Co:In:Zn,Fe:In:Zn,Ni:In:Zn 分别为5:1:100,5:1:100,3:1:100.3 mol/L KOH作矿化剂,温度430 ℃,填充度35;,反应24 h,制备了In和过渡族金属离子共掺的ZnO晶体.结果表明,掺杂In2O3时,所合成的过渡族金属离子掺杂的ZnO晶体均呈现六角片状晶体,晶体形貌规则,表面光滑,直径为5～10 μm.和未掺杂In的晶体相比,掺杂In后,晶体c轴极性生长速度得到明显的控制,a、b轴方向生长速度提高,大面积显露+c{0001}、负极面-c{0001}面,另外还显露正锥面+p{1011}、负锥面-p{101-1-}.     

Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs （100） substrates by using MOCVD

Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs (100) substrates. This trend is explained by taking into account the presence of multiatomic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs(100) substrates are also studied by photoluminescence (PL) . It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.     

NO及NO2与In/HZSM-5催化剂相互作用的微量量热研究

自从Iwamoto[1]和Held等[2]报道了在离子交换法制备的Cu-ZSM-5催化剂上烃类可以选择性催化还原(SCR)氧化氮后,基于分子筛的催化剂在这一反应中得到了广泛的研究,以期取代传统的NH3-SCR过程.