线性变位极谱法研究 XIV: 配位吸附准可逆波电化学参数的测定

本文讨论配位吸附准可逆波测定标准电极反应速率常数(kα)和转移系数(α)的理论与方法, 实验结果证实, 方法简便, 结果正确。     

Growth of Indium Nanorods by Magnetron Sputtering

Indium nanorods are grown on silicon substrates by using magnetron-sputtering technique. Film morphologies and nanorod microstructure are investigated by using scanning electron microscopy, high-resolution transmission electron microscopy （HRTEM）, and x-ray diffraction. It is found that the mean diameter of the nanorods ranges from 30nm to 100nm and the height ranges from 30nm to 200nm. The HRTEM investigations show that the indium nanorods are single crystals and grow along the [100] axis. The nanorods grow from the facets near the surface undulation that is caused by compressive stress in the indium grains generated during grain coalescence process. For low melting point and high diffusivity metal, such as bismuth and indium, this spontaneous nanorod growth mechanism can be used to fabricate nanostructures.     

稳定In/Si表面的LEED研究

利用LEED图形拟合的方法对大量不同取向In/Si表面的稳定性和小面化进行了研究，新发现了In覆盖度在1/2单层原子以下的三个稳定表面：Si(214)-In，Si(317)-In和Si(436)-In，以及In覆盖度在1单层原子左右的两个稳定表面Si(101)-In和Si(313)-In.此外还确定了In覆盖度在1单层原子左右的6个稳定In/Si表面的家族领地以及In覆盖度在1/2单层原子以下的4个稳定In/Si表面的家族领地.特别值得注意的是 Si(103)-In的家族领地相当大，甚至比最稳定的Si(1 关键词： 硅表面 铟 稳定表面 家族领地     

与In扩散进GaAs中相关的超导相的发现

一、背 景 1991年6月10日美国加州大学伯克利分校材料科学系J.M.Baranowski等人发表文章,题为“Evidence for Superconductivity inLow-Temperature-Grown GaAs”.[1]此文详细报道了他们用LT-GaAs(用分子束外延方法低温生长的GaAs样品)在电子自旋共振谱仪(EPR)上,采用磁场调制微波吸收的方法(FMMA),在温度T-10K时,观察到微波吸收的突变,这个行为清楚地表明:在这个温度下存在相变,这与高温超导体微波吸收特征相似.与此同时,又进行了迈斯纳效应的实验,从而证实了LT-GaAs中存在超导相. 关于超导相的起源,作者认为是由于LT-GaAs样…     

7-(1-苯偶氮)-8-羟基喹啉-5-磺酸显色双波长吸光光度法测定硫化锌基颜料中微量铟的研究

研究了7-(1-苯偶氮)-8-羟基喹啉-5-磺酸与铟的显色反应及分析应用,在曲拉通X-100存在下,于pH4.5的NaOAc-HOAc缓冲介质中,铟与显色剂形成组成比为1:3的黄色配合物,最大吸收波长为440nm,表观摩尔吸光系数为3.86×10~4,同时在550nm呈现负峰,用双峰双波长法测定铟,ε=7.33×10~4,线性范围为0～0.6mg·L~(-1),方法用于硫化锌基颜料中铟的测定,结果满意.     

Influence of O2 Flux on Compositions and Properties of ITO Films Deposited at Room Temperature by Direct-Current Pulse Magnetron Sputtering

Indium tin oxide （ITO） films were deposited on glass substrates at room temperature by dc pulse magnetron sputtering. Varying 02 flux, ITO films with different properties are obtained. Both x-ray diffractometer and x-ray photoelectron spectrometer are used to study the change of crystalline structures and bonding structures of ITO films, respectively. Electrical properties are measured by four-point probe measurements. The results indicate that the chemical structures and compositions of ITO films strongly depend on the O2 flux. With increasing O2 flux, ITO films display better crystallization, which could decrease the resistivity of films. On the contrary, ITO films contain less O vacancies with increasing O2 flux, which could worsen the conductive properties of films. Without any heat treatment onto the samples, the resistivity of the ITO film could reach 6.0 × 10^-4 Ω·cm, with the optimal deposition parameter of 0.2 scem O2 flux.     

Electrical Property of Infrared-Sensitive InAs Solar Cells

InAs infrared-sensitive solar cells are fabricated by using the films grown by the liquid phase epitaxy technique. The film microstructures are characterized by x-ray diffraction and scanning electronic microscopy. The current-voltage characteristics of the solar cells in the dark and under AM1.5 illumination at 300 K and 77 K are discussed. The conversion efficiency of p-InAs/n-sub InAs cells decreases when the thickness of the p-type film changes from 1.7 μm to 3.5 μm, which is caused by the reduced effective photons near p？n junction. The p-InAs/n-InAs/n-sub InAs solar cell with the conversion efficiency of 7.43% in 1-2.5 μm under AM1.5 at 77 K is obtained. The short circuit current density increases dramatically with decreasing temperature due to the weakened effect of phonon scattering.     

Low Density Self-Assembled InAs/GaAs Quantum Dots Grown by Metal Organic Chemical Vapour Deposition

The self-assembled InAs quantum dots （QDs） on GaAs substrates with low density （5×10^8 cm^-2） are achieved using relatively higher growth temperature and low InAs coverage by low-pressure metal-organic chemical vapour deposition. The macro-PL spectra exhibit three emission peaks at 1361, 1280 and 1204nm, corresponding to the ground level （GS）, the first excited state （ES1） and the second excited state （ES2） of the QDs, respectively, which are obtained when the GaAs capping layer is grown using triethylgallium and tertiallybutylarsine. As a result of micro-PL, only a few peaks from individual dots have been observed. The exciton-biexciton behaviour was clearly observed at low temperature.     

Single-Photon Emission from a Single InAs Quantum Dot

Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single InAs quantum dots. Exciton and biexciton emissions, whose photoluminescence intensities have linear and quadratic excitation power dependences, respectively, are identified. Under pulsed laser excitation, the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed, which is a clear evidence of single photon emission.