Dissociation and Coulomb Explosion of H2^4＋ in S^q＋ ＋H2 Collisions

We have investigated fragment emission from molecularions in H2^r collisions between S^q and H2 with incident energies of 12.5, 15.625, 18.75, 21.875, 25, 28.125, 31.25, 34.375, 37.5, 40.625, and 43.75 keV/u, respectively. The energy distributions of the fragments are measured by time-of-flight techniques. The experimental results show evidences for molecular Coulomb explosion and dissociation. A program[1] is estab-lished based on the Monte Carlo technique to simulate the time-of-flight spectrum of fragment ions with different initialkinetic energy in ion-Molecule collisions. Simulations are done for S^2 H2 collisions and compared with experimental results.     

金属材料分析方法的选择和施行第三讲钢铁中钼的测定(续)

(4)对离子交换分离-8-羟基喹啉重量法测钼的解说 在早年的ASTM标准方法中,α-安息香肟重量法及硫化钼沉淀重量法被采纳为钢铁及合金中高含量钼的测定方法。但从1988年以后的修订标准方法(即E351,E352,E353及E354)中对钼量w(Mo)>1.5％的试样均采用离子交换分离-8-羟基     

新型二硫纶·菲咯啉-5，6-二酮合铜(Ⅱ)配合物的磁性研究

报道了新合成的二氰基二硫纶·菲咯啉-5，6-二酮合铜(Ⅱ)配合物CuLL′(L=mnt^2-, 1,2-dicyano-1,2-ethylenedithiolate; L′=phen-5，6-dione, 1,10-phenanthroline-5,6-dione)的变温磁化率和电子顺磁共振波谱表征结果. 发现微晶粉体型的标题配合物CuLL′具有一定的顺磁性，形成四配位的近似于方形的结构. 探讨了这种配合物磁学特性与结构的关系.     

硅团簇Si+n(n=1-3)注入Si单晶性质的研究

利用硅团簇Si+n(n=1-3)注入Si单晶, 在Si单晶内形成一些单空位和双空位, 通过其光吸收谱观察到了带电状态为V02的双空位缺陷, 以及团簇效应对缺陷的影响, 正电子湮灭及TRIM程序模拟计算都表明团簇效应的存在.     

Single Qubit and Its Universal Logic Gate Made of a Heisenberg Spin Cluster with Five Particles

We investigate an anisotropic Heisenberg spin cluster with five particles controlled by a time-dependent magnetic field. With the algebraic dynamical method, we obtain the exact analytical solution to the time dependent Schr6dinger equation. Based on the analytical solution, it is shown that the system can be used as a universal single qubit logic gate controlled by the strength and frequency of the magnetic field, and the six special single qubit logic gates can be realized physically. We also discuss the anti-decoherence property of the qubit and its logic gates resulted from particle coupling effect and collectivity of the cluster.     

Electronic Properties of Red P-Type Tl2S5 Single Crystals

Single crystals of red Tl2S5 were prepared by a special modified vertical Bridgman and Stockbarger technique.This growth was performed in our laboratory. The influences of temperature on the electrical conductivity, Hall mobility, carrier concentration, and thermoelectric power (TEP) were carried out in the temperature range 277-413K. Throughout these measurements, various physical parameters such as effective mass of charge carriers,carrier mobility, diffusion coefficient, and the relaxation time for both majority and minority carriers were found.