Training Effect and Hysteretic Behaviour of Angular Dependence of Exchange Bias in Co/IrMn Bilayers

The training effect and the hysteresis behaviour of the angular dependence of exchange bias are extensively investigated upon the variation of the IrMn layer thickness tXrMn in a series of Co/IrMn bilayers. When tIrMn is very small, both of them are negligible. Then they increase very sharply with increasing tUMn and then reach maxima at almost the same value OftXrMn. Finally they both decrease when tIrMn is further increased. The similar variation trends suggest that these phenomena arise from irreversible change of antiferromagnet spin orientations, according to the thermal activation model.     

Charge transfer of 1 ML C60/Ag（100）

We have measured the synchrotron radiation photoelectron spectra of monolayer C60on Ag（100）, By calculating the intensity ratios between the LUMO bands and the two deeper bands （HOMO and HOMO- 1）, we estimate the amount of the charges transferred from Ag（100） to C60 within the range of 1 e to 1.8 e. The results dismay the expectation of surface superconductivity and afford a good reference for further studies of the monolayer C60/Ag（100） system.     

二阶导数光谱-峰面积积分法同时测定芦荟中痕量铁(Ⅱ)和钴(Ⅱ)

在 1,10 -邻菲罗啉显色体系中 ,引入二阶导数光谱 -峰面积积分技术 ,建立了同时测定痕量铁 ( )和钴 ( )的新方法。该法可有效消除共存离子的干扰 ,提高了准确度和灵敏度。对铁和钴的表观摩尔吸光系数分别为 εFe5 .4 5× 10 6 L·mol-1·cm-1,εCo 1.1× 10 4 L· mol-1· cm-1;铁含量在 0 .0— 8.5 μg·m L-1,钴含量在 0 .0— 7.3μg· m L-1范围内遵守比耳定律。可用于芦荟中铁和钴的同时测定 ,结果令人满意     

PAN浊点萃取-火焰原子吸收光谱法测定水样中的痕量钴

提出了浊点萃取-火焰原子吸收光谱法测定痕量钴的新方法。探讨了溶液pH,试剂浓度等实验条件对浊点萃取及测定灵敏度的影响。在最佳条件下,富集50mL样品溶液,用火焰原子吸收光谱法测定,钴的检出限为0.22μg/L,钴的富集倍率为68倍。方法用于自来水、井水及海水中痕量钴的测定。     

纳米二氧化钛分离富集ICP-AES测定镉、钴、锌的研究

建立了纳米二氧化钛分离富集,电感耦合等离子体原子发射光谱(ICP-AES)测定镉、钴和锌的新方法。考察了溶液pH值、洗脱条件和干扰离子等因素对分析物分离富集的影响。结果表明,在pH 9～10范围内,Cd, Co和Zn可被纳米TiO₂定量富集,吸附于纳米TiO₂上的金属离子可用0.1 mol·L-1的硝酸溶液完全解脱。在优化的实验条件下,纳米TiO₂对Cd, Co和Zn的吸附容量分别为8.1, 6.9和15.1 mg·g-1。本法对Cd, Co和Zn的检出限(3σ)分别为：5.1, 3.4和2.9 ng·mL-1,相对标准偏差(RSD)分别为4.3%, 4.6%和4.9%(n=9, c= 0.1 μg·mL-1)。该方法已成功地应用于环境样品中镉、钴和锌的测定,分析结果满意。     

影响光谱辐亮度标定因素的分析

在利用漫反射板标定光谱辐亮度的实验装置中,标准灯完全可以近似为点光源。通过对进入光谱仪的辐射通量的数值积分,可以对应求出仪器的实测光谱辐亮度的计算公式。计算表明,实测光谱辐亮度并不等于漫反射板表面的光谱辐亮度,而有一个随标定条件变化的微小差值。通过计算,对光谱仪与漫反射板的距离、光谱仪入射挟缝的光轴与漫反射板法线的夹角以及标准灯与漫反射板的距离等影响光谱仪标定的因素进行分析,得到了最佳的标定条件。讨论了理想标定情况、光谱仪视场趋于一点的极限情况和采用实际的双向反射分布函数已知的漫反射板标定时,实测光谱辐亮度的计算情况。     

Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.     

具有横向磁晶各向异性的钴纳米线的微波吸收性能

使用电化学脉冲沉积法制备了磁晶各向异性易磁化方向(c轴)垂直纳米线长轴方向的钴纳米线.受到磁晶各向异性、静磁相互作用等因素与形状各向异性相互竞争的结果,纳米线阵列的磁滞回线显示出较弱的磁各向异性.此外,在2—18 GHz频率范围内,纳米线/石蜡复合材料的介电色散谱的虚部在5 GHz处有一个主峰,在10 GHz附近有一个较弱的峰;德拜弛豫特性和材料的电导率对这两个峰的形成均有贡献.同时,其磁导率色散谱的虚部在频率为6.1 GHz处有一个主峰,在10 GHz以上有两个较微弱的峰. 前一个峰源于自 关键词： 钴纳米线 介电色散谱 磁导率色散谱 微波吸收剂     

GISAXS and SAXS studies on the spatial structures of Co nanowire arrays

The spatial structures of magnetic Co nanowire array embedded in anodic aluminium membranes were investigated by grazing incidence small angle X-ray scattering (GISAXS) and conventional small angle X-ray scattering (SAXS) techniques. Compared with SEM observation, the GISAXS and SAXS measurements can get more overall structural information in a large-area scale. In this study, the two-dimensional GISAXS pattern was well reconstructed by using the IsGISAXS program. The results demonstrate that the hexagonal lattice formed by the Co nanowires is distorted (a ≈ 105 nm, b ≈ 95 nm). These Co nanowires are isolated into many structure domains with different orientations with a size of about 2 μm. The SAXS results have also confirmed that the nanopore structures in the AAM can be retained after depositing Co nanowires although the Co nanowires can not completely but only just fill up the nanopores. These results are helpful for understanding the global structure of the Co nanowire array.     

p型金属氧化物半导体场效应晶体管低剂量率辐射损伤增强效应模型研究

对一种非加固4007电路中p型金属氧化物半导体场效应晶体管(PMOSFET)在不同剂量率条件下的电离辐射损伤效应及高剂量率辐照后的退火效应进行了研究. 通过测量不同剂量率条件下PMOSFET的亚阈I-V特性曲线,得到阈值电压漂移量随累积剂量、退火时间的变化关系. 实验发现,此种型号的PMOSFET具有低剂量率辐射损伤增强效应. 通过描述H⁺在氧化层中的输运过程,解释了界面态的形成原因,初步探讨了非加固4007电路中PMOSFET低剂量率辐射损伤增强效应模型. 关键词： p型金属氧化物半导体场效应晶体管 60Co γ射线')" href="#">⁶⁰Co γ射线 电离辐射损伤 低剂量率辐射损伤增强效应