Photoluminescence Characterization of Nanocrystalline ZnO Array

High-density and uniform well-aligned ZnO sub-micron rods are synthesized on the silicon substrate over a large area. The morphology and structure of the ZnO sub-micron rods are investigated by x-ray diffraction, transmission electron microscopy and Raman spectra. It is found that the ZnO sub-micron rods are of high crystal quality with the diameter in the range of 400-600 nm and the length of several micrometres long. The optical properties were studied by photoluminescence spectra. The results show that the intensity of the ultraviolet emission at 3.3eV is rather high, meanwhile the deep level transition centred at about 2.38eV is weak. The free exciton emission could a/so be observed at low temperature, which implies the high optical quality of the ZnO sub-micron rods.This growth technique provides one effective way to fabricate the high crystal quality ZnO nanowires array, which is very important for potential applications in the new-type optoelectronic nanodevices.     

类钙钛矿化合物Ca(Mn2 Cu1)Mn4 O12的磁性与磁电阻效应

利用固相反应法制备了名义成分为Ca(Mn2 Cu1 )Mn4 O1 2 的类钙钛矿锰氧化物 .x射线衍射表明 ,为了获得较为致密的样品和减小杂相含量 ,可以采用高温烧结再在 10 73K长时间空气中退火的制备方法 .样品在低温下同时存在铁磁相和反铁磁相 ,由于反铁磁相的存在导致样品在 4 5K时的磁化强度显著降低 ,并在 8T的高磁场下仍未达到饱和 .样品呈半导体导电性质 ,在 85K和 6T磁场下磁电阻比的最大值可达 - 4 6 % .     

某些稀土氧化物的高温高压合成及其结构稳定性研究

 首次用高压高温方法，在3.2~4.0 GPa，1 000~1 300 ℃下，对CeO₂-R₂O₃（R=Eu，Gd），CeO₂-Tb₄O₁₁，Pr₆O₁₁-Tb₄O₇稀土氧化物进行合成实验，得到具有F型结构的CeEuO_3.5，CeGdO_3.5，CeTbO_3.5；B型结构的CeEuO₃，CeGdO₃，CeTbO₃，PrTbO₃和P型结构的PrTbO₃。PrTbO₃是迄今自然界尚未发现，文献未见报导过的新物质。对上面的产物和NdYbO₃、PrTmO₃，利用高、低温X射线衍射实验，检测了其结构的稳定性，结果指出：从300 ℃直到1 000 ℃，发生由B型CeRO_x向F型CeRO_x（R=Eu，Gd，Tb）、B型PrTbO₃向C型PrTbO₃的结构转变。F型CeRO_x属于氧缺位萤石型结构。     

熔融浇铸法合成Bi—Sr—Ca—Cu—O高温超导体

将 Bi_2O_3,SrCO_3,CaCO_3,CuO 按比例混合和熔融,化合成 Bi-Sr-Ca-Cu-O 复合氧化物,浇铸成型;经高温退火处理获得起始转变温度117K,零电阻温度79K 的多相超导体.此法与通常的烧结法进行了对比.     

循环伏安法研究Ba2YCu3O7—y超导体

本文利用电化学循环伏安法(CV 法),以饱和 Ba(OH)_2水溶液为电解液,对单相Ba_2YCu_3O_(7-y)正交和四方结构超导体进行了研究.结果发现:在典型的正交相中确实存在Cu~(3+)→Cu~(2+)的还原峰,而四方相则无此峰出现.从而首次直接检测到 Ba_2YCu_3O_(7-y)烧结体中 Cu~(3+)离子.     

La1.85Sr0.15CuO4中的同位素效应

利用同位素间 Eliashberg 函数的关系及 Eliashberg 方程,我们计算了 La_(1.85)Sr_(0.15)CuO_4对应于~(16)O 及~(18)O 的 T_c,从而得到同位素指数α的值.计算结果与不同实验进行了比较.传统的电声机制可以解释这个同位素效应.     

插层化合物钨青铜单晶的物理研究

本工作利用X射线衍射分析、电导测量、红外、喇曼散射等手段,对用熔盐电解法生长的K_xWO₃,Na_yWO₃和K_xNa_yWO₃单晶进行了深入的研究,得出K_xNa_yWO₃是钠离子插入到K_xWO₃的结论,提出了K_xNa_{y关键词：}     

MO2,M2O5和MO3氧化物对锂硼酸盐玻璃离子导电性的影响

本工作测量了45Li₂O·50B₂O₃·5M_mO_n(M=Al,Ti,Zr,P,V,Nb,Ta,Cr,Mo,W)玻璃的总电导率和电子电导率,以Raman光谱研究了玻璃结构,依据作为锂离子定域体的阴离子团的性质讨论了MO₂,M₂O₃和MO₃氧化物对玻璃离子导电性的影响。 关键词：     

Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes （LEDs）

The reasons for low output power of AlGaInP Light Emitting Diodes (LEDs) have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency (EQE) has serious impaction on the internal quantum efficiency (IQE), because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.