矩孔金属光栅矢量模式理论的数值计算

根据矩孔金属光栅的矢量模式理论，计算了不同入射方向，波长及偏振态情况下衍射场的分布，研究了不同光栅结构对衍射效率，偏振态变化的影响；同时，根据实际需要，加工制作了一批不同深度的矩孔光栅样品，进行了实验测量，并将计算值与实验值进行了比较，两者基本相符。     

Optical Recording Properties of Metal-Azo Dye as Recording Medium with Super-Resolution Near-Field Structure

A novel metallized azo dye has been synthesized. The absorption spectra of the thin film and thermal characteristic are measured. Static optical recording properties with and without the Bi mask layer super-resolution near-field structure （Super-RENS） of the metal-azo dye are investigated. The results show that the metal-azo dye film has a broad absorbance band in the region of 450-650 nm and the maximum absorbance wavelength is located at 603 nm. It is also found that the new metallized azo dye occupies excellent thermal stability, initiatory decomposition temperature is at 270℃ and the mass loss is about 48% in a narrow temperature region （15℃）. The complex refractive index N （N = n ＋ iκ） is measured. High refractive index （n = 2.45） and low extinction coefficient （κ = 0.2） at the recording wavelength 65Ohm are attained. Static optical recording tests with and without Super-RENS are carried out using a 65Ohm semiconductor diode laser with recording power of 7mW and laser pulse duration of 200ns. The AFM images show that the diameter of recording mark on the dye film with the Bi mask layer is reduced about 42%, compared to that of recorded mark on the dye film without Super-RENS. It is indicated that Bi can well performed as a mask layer of the dye recording layer and the metallized azo dye can be a promising candidate for recording media with the super-resolution near-field structure.     

金属上化学吸附的族模型量子化学研究

簇模型方法是研究化学吸附的最重要的量子化学方法之一。本文对＇簇－－表面类比法＇的物理内涵、研究现状、以及发展趋势作了简要的评述。     

双桥反应及其应用

双桥反应及其应用刘颖，杨小震，刘跃（牡丹江师范学院化学系，黑龙江１５７４２２）（中国科学院化学研究所，北京１０００８０）根据反式消去、反式加成反应￣［１，２］，人们提出了非经典三元环离子结构（我们称之为单桥结构）。在被负离子进攻之前，该三元环结构始终...     

采用热处理方法提高MEH-PPV单层聚合物有机发光二极管发光性能的研究

对以MEH－PPV为发光层的单层聚合物有机发光二极管（OLED）器件在最佳条件下进行真空热处理，并用金相显微镜观察施加电压后器件的阴极表面形貌。发现处理后的器件阴极表面的气泡及黑斑明显减少。器件的发光性能显著提高。与未经处理的器件相比，最大相对发光强度提高了一个数量级、启亮电压降低了2．0V，半寿命提高了12．7倍。初步分析表明热处理方法提高器件发光性能的主要原因在于有效地减少了器件在工作过程中由于焦耳热产生的某些气体，从而减少阴极表面气泡及黑斑的出现，另一方面，热处理方法也增强了有机发光层与阴极接触界面的结合力，提高电子注入水平。