High—Efficiency Organic Double—Quantum—Well Light—Emitting Devices Using 5,6,11,12—Tetraphenylnaphthacene Sub—monolayer as Potential Well

The double-quantum-well organic light-emitting devices of indium-tin-oxide (ITO)/NPB (50nm)/rubrene (0.05nm)/NPB (4nm)/rubrene (0.05nm)/Alq3 (50nm)/LiF (0.5nm)/Al were fabricated, in which N,N-bis-(1-naphthyl)-N,N‘-diphenyl-1,1‘-biphenyl-4,4‘‘‘‘‘‘‘‘-diamine (NPB) is used as a barrier potential or hole transport layer, tris (8-hydroxyquinoline) aluminium (Alq3) used as electron transport layer, and 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter. The brightness can reach 18610cd/m^2 at 13V. The maximum electroluminescent efficiency of the device was 6.61cd/A at 7V, which was higher than that of common dope-type devices. In addition, the electroluminescence efficiency is relatively independent of the drive voltage in the range from 5 to 13V.     

原子吸收法在有机分析中的应用（Ⅵ）香烟中氢氰酸的分析

原子吸收法在有机分析中的应用（Ⅵ）香烟中氢氰酸的分析谢志海，郎惠云，高云（西北大学化学系，西安，７１００６９）关键词：氢氰酸，测定，原子吸收光谱香烟中的尼古丁，烟焦油等含氮有机物燃烧后将产生氢氰酸，吸入人体后极为有害。国外在这方面的研究始于七十年代，...     

Magnetic Properties of Hf0.8Ta0.2（Fe0.97A0.03）2 （A=Al, Co, Mn） Systems

Moessbauer studies on the effect of substitution with 3% Al, Co, Mn atoms in the intermetallic compound of Hf0.8Ta0.2Fe2 are reported. The Al substitution leads to increase of the FM-AFM transition temperature and to decrease of the AFM-PM transition temperature. The Co substitution leads to disappearance of the FM state, only showing some FM impurity component, while Mn substituted compound indicates coexistence of FM and AFM states at low temperature. The phenomena imply complex itinerant electron properties in these magnetic systems.     

立足开智 有机整合推动珠心算幼教事业全面发展——在黑龙江首次珠心算与幼教整合现场会上的讲话

各位老师、同志们： 新年伊始，我们在省实验教学中心召开全省首次珠心算与幼教整合现场会，这是我省以整合教育为目的，围绕珠心算服务幼教、有效开发儿童智力召开的专题会议。在此，首先我代表黑龙江省珠算协会向大家致以新年问候!同时，对千里迢迢来我省观摩本次会议和参加师资培训的河南省焦作市、广东省湛江市、河北省邢台市、内蒙古新巴尔虎左旗等兄弟省市的同行和前来参加培训的教师表示热烈的欢迎!     

应力对La0.83Sr0.17MnO3薄膜输运性能的影响

采用溶胶-凝胶方法在Si(111)上制备了LSMO(x=0.17)薄膜.研究了块体材料和不同厚度薄膜R -T曲线、红外光谱和X射线衍射.结果表明，LSMO薄膜属于正交晶体结构，薄膜取向与膜厚度 有关，当膜厚度为450nm或680nm时，主要取向〈200〉，而膜厚度为900nm时取向为〈020〉 ：根据离子对相互作用能和谐振子模型，得到了红外吸收与Mn—O—Mn键长和键角关系式，6 00cm^-1附近红外吸收与晶格常数b的变化有关；块体与薄膜的金属—绝缘体转变 温度(T_MI)存在较大差别，薄膜转变温度显著低于块体，并与厚度有一定关系. 认为是LSMO薄膜中的应力诱导了晶格常数变化，引起键角改变及JT效应是转变温度变化的主 要原因. 关键词： 单晶硅 晶格常数 金属—绝缘体转变温度 应力诱导     

Non-Achievability of Metal-Insulator Transition in Two-Dimensional Systems

We present a simple demonstration of the nonfeasibility of metal-insulator transition in an exactly two-dimensional （2D） system. The Hartree-Fock potential in the 3D system is suitably modified and presented for the 2D case. The many body effects are included in the screening function, and binding energies of a donor are obtained as a function of impurity concentration so as to find out the possible way leading metal-insulator transition in the 2D system. While solving for the binding energy for a shallow donor in an isolated well of a GaAs/Ga1-x Als As superlattice system within the effective mass approximation, it leads to unphysical results for higher concentrations. It shows that the phase transition, the bound electron entering into the conduction band whereby （H）min=0, is not possible beyond this concentration. The results suggest thai a phase transition is impossible in 213 systems, supporting the scaling theory of localization. The results are compared with the existing data available and discussed in the light of existing literature.     

高纯金属镨中痕量稀土杂质的电感耦合等离子体原子发射光谱分析及光谱干扰的校正

本文提出了PGS-2型平面光栅光谱仪(色散率0.18纳米,二级光谱)与PlasmaTherm ICP-5000D射频发生器联用,乙醇预去溶方式进样,同时直接测定高纯金属镨中5个痕量稀土杂质元素的方法。并讨论了基体浓度对检出限的影响以及光谱干扰及其校正方法。当样品溶液中镨的浓度为5毫克/毫升时,测定下限分别为镧、钕和钐0.002%,铈0.003%和钇0.0005%。获得了良好的实验结果,其相对标准偏差为1.2-6.2%。     

手性金属试剂催化的不对称羟氰化反应

介绍了近年来发展起来的手性金属试剂催化的不对称羟氰化反应，并对其催化机理进行了讨论。     

抗有机杂质镀镍添加剂对阴极极化性能的影响

研究了有机杂质以及抗有机杂质添加剂对镀镍过程中阴极极化性能的影响．实验结果表明，有机杂质增大了阴极极化，而抗有机杂质添加剂却能减小阴极极化．实验结果还显示，添加剂消除有机杂质污染的效果同其降低阴极极化的能力密切相关     

有机薄膜电致发光器件失效过程的动态观测及分析

对有机薄膜电致发光器件失效的全过程进行了显微动态观察，发现器件工作时，有机层／金属界面形成的气泡逐渐变大变多，最终导致器件完全失效，气泡不仅含有水汽，还存在大量有机气体。