Triterpenoid Constituents of Huperzia miyoshiana

Thirteen triterpenoids, including three new ones, miyoshianois A (1), B (2) and C (3), were isolated from Huperzia miyoshiana. The structures of these new compounds were established as 3-O-dihydroferuloyltohogenol (1), 16-oxo-3β,21β-dihydrox-y-serrat-14-en-24-ferulate (2) and 16-oxo-3a, 21β-dihydroxy-serrat-14-en-24-ferulate (3), respectively, on the basis of their spectroscopic analysis.     

Defect Structures in 4H-SiC Irradiated with Highly-energetic ^20Ne^4＋ and ^120Xe^26＋ Ions

The study of damage evolution in silicon carbide bombarded with energetic helium ions is important for the use of this material in future fusion reactors. Heavier inert gas atoms like Ne and Xe have similar behavior of diffusion and clustering with helium, and the comparison of damage accumulation behavior between energetic helium and heavier inert gas ions can reveal important aspects of underlying mechanisms. As an extension of our     

若干具有[(PO4)2Mo5O15]簇骼的化合物的光谱研究

本文对所合成的具有 [(PO4 ) 2 Mo5O1 5]簇骼的 3种新颖的有机 磷钼酸盐簇合物(NH3CH2 CH2 NH3) 2 5[(PO4 ) (HPO4 )Mo5O1 5]·7 5H2 O (Ⅰ ) ,(H3NCH2 CH2 NH3) 3·[(PO4 ) 2 Mo5O1 5]·3H2 O (Ⅱ )和(H3NCH2 CH2 NH3) 2 ·[Cu(en) ][(PO4 ) 2 Mo5O1 5]·5H2 O (Ⅲ )用FTIR ,NIR Raman ,紫外 可见漫反射光谱 (UV VisDRS)和荧光光谱等研究手段 ,对其进行光谱研究 ,探讨其结构和性能的关系。在这些化合物中 ,化合物Ⅰ和Ⅱ具有孤立的 [(PO4 ) 2 Mo5O1 5]簇骼基元 ,而化合物Ⅲ的 [(PO4 ) 2 Mo5O1 5]簇骼基元是由 [Cuen]基团桥联成链 ;磷钼酸盐的特征振动频率和这些化合物的结构相关 ;UV VisDRS显示 ,在 2 0 0和 2 6 0nm左右有两个杂多化合物的特征吸收谱带 ;化合物的稳态荧光光谱中 ,观察到以 2 4 0nm激发 ,在大约 4 0 0nm附近出现的由金属氧簇Oμ→Mo跃迁激发所引起的较强的发射峰 ,在化合物 (Ⅲ )中 ,还观察到通过 [Cuen]的荷移跃迁的以 5 70nm激发所产生的 6 0 4nm的发射峰。     

金属铀各相电子结构与原子力

锕系元素不仅存在σ，π，δ对称，还出现了φ轨道，而且相对论效应十分明显，作用机理比较复杂，而全电子计算由于对计算机硬件的要求十分苛刻，因而尚难以开展。因而国际上除了做了一些铀、钚化合物的物性研究外，几乎难以找到关于铀钚腐蚀机理的第一原理研究的报道。而用第一原理研究对于一些非镧、锕系元素，如硅、铜、钯等这种研究工作已经开展得很普遍，而且已经用于指导催化和腐蚀研究的实践工作。在LLUL钚科学在挑战专辑中，对于钚的基态性质，采用局域密度近似（简称LDA）和综合梯度近似方法简称GGA）进行了研究，     

氚化钛中氦的热解析

氚以金属氚化物贮存形式过程中，会衰变生成氦-3，从而影响金属氚化物的使用性能。文中采用热解析方法研究了不同贮存周期氦在金属氚化物中的能量状态的变化情况。     

超分子有机薄膜

利用超分子有机薄膜技术能制成新的传感分子电子器件、光学器件和生物分子器件等，受到跨学科高技术研究领域的重视。本文描述了超分子有机薄膜的制备方法以及在各应用领域的研究状况。重点介绍了我们研究组在近20年工作中，利用LB膜技术，在光电器件、气体传感技术和光学非线性，特别是在生物传感技术方面的研究成果。按照生物体系提供的信息，模拟合成功能分子，建造有组织的分子组装体，以便用来研究依赖于分子排列的生物物理化学效应。     

SURFACE METALLIZATION OF CENOSPHERES AND PRECIPITATORS BY ELECTROLESS PLATING

This paper reports the use of a colloidal Pd^0 catalysis system to metallize the surface of precipitators separated from coal fly-ash, and metals such as Cu, Ni etc. are deposited on the precipitators surface. Alternatively, according to the characteristic surface of cenospheres, an Ag coating catalysis system is adopted to first deposit Ag on the cenospheres surface, followed, if necessary, by the deposition of other metals such as Cu, Ni, etc. on the Ag coating to produce monolayer and multilayer metal-coated cenospheres. The surface characteristics and the morphologies of the metal coatings are examined in detail with scanning electron microscopy (SEM), energy dispersive spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) techniques. It can be shown that the quality of metal coatings derived from the Aa coatina catalysis system, is better than that of the colloidal Pd^0 catalysis system.     

Y（Fe，Si）12化合物结构与磁性的第一原理计算

R（Fe，Si）12（R=Y，Nd）型稀土永磁材料具用重要的实际应用价值，然而对于V（Fe，Si）12化合物微观机理的理论计算工作至今尚未开展。采用新近发展的全势能线性缀加平面波（（L）APW）＋局域轨道（10）和广义梯度近似（GGA）密度泛函方法对其结构与磁性进行了研究。     

Time—Resolved Photoluminescence Studies of AlInGaN Alloys

We study the two samples of AlInGaN,i.e.,1-μm Gan grown at 1030℃ on the buffer and followed by a 0.6μm-thick epilayer of AlInGaN under the low pressure of 76 Torr and the AlInGaN layer deposited diectly on the buffer layer without the high-temperature GaN layer,by temperature-dependent photoluminescence(PL) spectroscopy and picosecond time-resolved photoluminescence(TRPL) spectroscopy.The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures,indicating significant disorder in the material.We attribute the disorder to nanoscale quantum dots or discs of high indium concentration.Temperature dependence of dispersive exponent β shows that the stretched exponential decay of the two samples comes from dfferent mechanisms.The different depths of the localization potential account for the difference,which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.     

二代树状碳硅烷液晶研究Ⅰ.端基含36个丁氧基偶氮苯介晶基元

用发散法合成周边含36个丁氧基偶氮苯介晶基元(M5)端基新的二代树状碳硅烷液晶(D2),并用元素分析,氢谱,激光质谱,红外,紫外,偏光显微镜,DSC和WAXD法表征.D2为向列相,与M5相同,二代树状物相态由介晶基元相态决定.D2液晶态相行为是K85N107I103N69K,其熔点比M5降低27～41℃,清亮点比M5降低17～18℃,液晶态温区比M5加宽10～23℃.二代碳硅烷(D2)与一代碳硅烷(D1)相比熔点增加2～3℃,清亮点降低26～29℃,液晶态温区减少29～31℃.在二代树状物中观察到S=+3/2的高强向错.