用三个关系式与Mathematica软件求第二类自然数幂和公式

首先介绍三个第二类自然数幂和关系式并对其中的两式给出证明,接着利用这些关系式与数学软件M athem atica4.0,给出求解第二类自然数幂和公式的若干机械计算方法.     

S[a,b]类中边界Nevanlinna-Pick插值(Ⅱ)

继续作者最近的研究,用所谓的Hankel向量方法建立S[a,b]函数类中带边界插值数据的Nevanlinna-Pick插值问题与[a,b]上的某种带约束条件的Hausdorff矩量问题之间解集之间明确的一一对应关系.通过N[a,b]函数类与S[a,b]函数类之间的联系,从而由BNP(N[a,b])问题的可解性准则和解的参数化描述获得BNP(S[a,b)问题的可解性准则和解的参数化表示.     

二阶导数光谱-峰面积积分法同时测定芦荟中痕量铁(Ⅱ)和钴(Ⅱ)

在 1,10 -邻菲罗啉显色体系中 ,引入二阶导数光谱 -峰面积积分技术 ,建立了同时测定痕量铁 ( )和钴 ( )的新方法。该法可有效消除共存离子的干扰 ,提高了准确度和灵敏度。对铁和钴的表观摩尔吸光系数分别为 εFe5 .4 5× 10 6 L·mol-1·cm-1,εCo 1.1× 10 4 L· mol-1· cm-1;铁含量在 0 .0— 8.5 μg·m L-1,钴含量在 0 .0— 7.3μg· m L-1范围内遵守比耳定律。可用于芦荟中铁和钴的同时测定 ,结果令人满意     

短脉冲强激光在稀薄等离子体中传播时的电磁类孤立子

 采用二维粒子模拟方法，研究了短脉冲强激光在稀薄等离子体中传播时电磁类孤立子的产生和时空演化过程。通过分析电磁场与等离子体波的非线性能量交换和激光场的频率谱结构等，给出了电磁类孤立子形成的基本物理图像，讨论了等离子体参数对电磁类孤立子形成的影响。模拟结果表明：类孤立子的形成是由于局部电磁波振荡频率减小至等离子体频率引起的，初始等离子体密度越高越容易形成空间局域结构。     

某些类氖离子和类镍离子等离子体状态对应关系的研究

利用一维拉格朗日流体动力学程序Med103详细研究了产生类镍Ag,Cd,In,Sn, Sb离子和类氖Fe,Co,Ni,Cu,Zn离子的等离子体状态.通过对电子温度、离子丰度、离子数密度等状态参量的分析比较，得到了这两类等离子体状态之间的对应关系.即类镍银的等离子体状态与类氖铁 的相近，类镍镉的与类氖钴的相近，依次类推.利用这一对应关系可以方便地由类氖机理x射线激光的等离子体状态来对相应元素的类镍x射线激光的等离子体状态进行判断. 关键词： 类氖 类镍 等离子体状态 x射线激光     

Crystal Structure of Adduct 2-Phenyl-imidazo [ 4,5-f ] 1,10-phenanthroline Methanol

The structure of the title adduct comprises a phenanthroline derivative 2-phenyl-imidazo[4,5-f]1,10-phenanthroline and a methanol.The composition of the crystalline adduct was characterized as C19H12N4.CH3OH.It belongs to orthorhombic system,space group Pna21 with a=1.3693(4)nm,b=2.2988(7)nm,c=0.51338(15)nm,V=1.6160(8)nm^3.Z=4,and final R1=0.0423.wR2=0.1012 .Crystal structure shows that all the 19 carbon atoms and 4 nitrogen atoms are coplanar.The bond length data indicated that a very extensive conjugation system was formed.This conjugation makes the compound being a potentially excellent energy transformer used for luminescent materials.     

氟化类金刚石薄膜的拉曼和红外光谱结构研究

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Deposition of Diamond-Like carbon Films by High-Intensity Pulsed Ion Beam Ablation at Various Substrate Temperatures

Diamond-like carbon (DLC) films have been deposited on to Si substrates at substrate temperatures from 255℃ to 400O℃ by a high-intensity pulsed-ion-beam (HIPIB) ablation deposition technique. The formation of DLC is confirmed by Raman spectroscopy. According to an x-ray photoelectron spectroscopy analysis, the concentration of sp^3 carbon in the films is about 40% when the substrate temperature is below 300℃ C. With increasing substratetemperature from 25℃ to 400℃, the concentration of sp^3 carbon decreases from 43% to 8%. In other words,sp3 carbon is graphitized into sp^2 carbon when the substrate temperature is above 300℃. The results of xray diffraction and atomic force microscopy show that, with increasing the substrate temperature, the surface roughness and the friction coefficient increase, and the microhardness and the residual stress of the films decrease.     

Stone代数的Cayley表示定理

首先通过集代数得到了Stone代数的表示定理,然后证明了每一个Stone代数均嵌入到某个集合X上的一个Stone映射类S中.