非接触铜铝纳米薄膜侧向移动相互作用的分析

采用分子动力学方法模拟铜铝纳米薄膜相对侧向移动的相互作用能。研究了铜薄膜的侧向位移从0Å到50Å时温度、相互作用间距、表面形貌和表面粗糙度对作用能的影响。结果表明,相互作用强度随温度的增加而增大,随相互作用间距的减小而增大,随表面粗糙度的增大而减小。为研究薄膜在纳米尺度的相互作用提供了一个新的方法。     

EXISTENCE AND UNIQUENESS OF THE ENTROPY SOLUTION TO A NONLINEAR HYPERBOLIC EQUATION

ＥＸＩＳＴＥＮＣＥＡＮＤＵＮＩＱＵＥＮＥＳＳＯＦＴＨＥＥＮＴＲＯＰＹＳＯＬＵＴＩＯＮＴＯＡＮＯＮＬＩＮＥＡＲＨＹＰＥＲＢＯＬＩＣＥＱＵＡＴＩＯＮ￥Ｒ．ＥＹＭＡＲＤ；Ｔ．ＧＡＬＬＯＵＥＴ；Ｒ．ＨＥＲＢＩＮ（ＬａｂｏｒａｔｏｉｒｅＣｅｎｔｒａｌｄｅｓＰｏ...     

大气环境质量评价的灰色模型

大气环境是一个包含未知信息的灰色系统，根据其灰色性．运用灰色系统理论可以克服目前一些环境质量评价方法（综合指数法、概率统计法、模糊综合评判法）的局限性，使评价结果更为科学和客观。     

关于线性回归模型的有偏估计

有偏估计方法是近代回归分析的常用方法．本文研究了几种常用的有偏估计方法，澄清了这些方法的区别和联系．对有偏估计的一些关键点进行研究，给出了一种新的岭参数确定法和一种新的主成分概念，并讨论了这些方法的优良性．为了提高有偏估计的效率，提出了用比例因子规范模型的方法．最后，给出了说明本文方法的数值例子．     

Excitation of Propagating Plasmons in Semi-Infinite Graphene Layer by Free Space Photons

By investigating the diffraction of plane waves by a semi-infinite solution for propagating surface plasmons in graphene, which can be excited graphene edge. The theoretical results are confirmed by numerical simulations. excite propagating surface plasmons in graphene where the graphene edge plays graphene layer, we present a rigorous by incident plane waves through the Our results reveal a convenient way to an important role.     

A TWO-LEVEL FINITE ELEMENT GALERKIN METHOD FOR THE NONSTATIONARY NAVIER-STOKES EQUATIONS I： SPATIAL DISCRETIZATION

In this article we consider a two-level finite element Galerkin method using mixed finite elements for the two-dimensional nonstationary incompressible Navier-Stokes equations. The method yields a $H^1$-optimal velocity approximation and a $L_2$-optimal pressure approximation. The two-level finite element Galerkin method involves solving one small, nonlinear Navier-Stokes problem on the coarse mesh with mesh size $H$, one linear Stokes problem on the fine mesh with mesh size $h << H$. The algorithm we study produces an approximate solution with the optimal, asymptotic in $h$, accuracy.     

二维三温热传导方程组的分数步隐式差分格式

本文给出一个解二维三温热传导方程组的分数步隐式有限差分格式，利用离散变分形式及能量方法，给出差分格式的最优阶离散H^1范数先验误差及稳定性估计。     

偏磷酸根(PO-3)对氟铝酸盐玻璃透光性能影响

在氟铝酸盐玻璃（AMCSBY）中引入Ba(PO3）2替代BaF2,替代公式为10MgF2-20CaF2-(10-x)BaF2-10SrF2-15YF3-35AlF3-xBa(PO3)2(x=,2,4,6,8)。对玻璃进行了差热分析，结果表明，在氟铝酸盐玻璃中引入偏磷酸盐使玻璃形成能力大大提高；测量了玻璃从紫外到红外的透过光谱和紫外吸收光谱，在玻璃中引入偏磷酸钡使玻璃中红外透过能力下降，红外吸收边带移向短波段，玻璃紫外透过能力得到提高。紫外吸收边带移向紫外波段，由于PO3^-的影响，O－H吸收峰由2830nm移到3145nm。     

A virtual optical probe based on evanescent wave interference

A virtual probe is a novel immaterial tip based on the near-field evanescent wave interference and small aperture diffraction, which can be used in near-field high-density optical data storage, nano-lithography, near-field optical imaging and spectral detection, near-field optical manipulation of nano-scale specimen, etc. In this paper, the formation mechanism of the virtual probe is analysed, the evanescent wave interference discussed theoretically, and the sidelobe suppression by small aperture is simulated by the three-dimensional finite-difference time-domain method. The simulation results of the optical distribution of the near-field virtual probe reveal that the transmission efficiency of the virtual probe is 10²－10⁴ times higher than that of the nano-aperture metal-coated fibre probe widely used in near-field optical systems. The full width at half maximum of the peak, in other words, the size of virtual probe, is constant whatever the distance in a certain range so that the critical nano-separation control in the near-field system can be relaxed. We give an example of the application of the virtual probe in ultrahigh-density optical data storage.     

A Novel Contactless Method for Characterization of Semiconductors：Surface Electron Bean Induced Voltage in Scanning Electron Microscopy

We present a novel contactless and nondestructive method called the surface electron beam induced voltage (SEBIV) method for characterizing semiconductor materials and devices.The SEBIV method is based on the detection of the surface potential induced by electron beams of scanning electron microscopy (SEM).The core part of the SEBIV detection set-up is a circular metal detector placed above the sample surface.The capacitance between the circular detector and whole surface of the sample is estimated to be about 0.64pf.It is large enough for the detection of the induced surface potential.The irradiation mode of electron beam (e-beam) influences the signal generation When the e-beam irradiates on the surface of semiconductors continuously,a differential signal is obtained.The real distribution of surface potentials can be obtained when a pulsed e-beam with a fixed frequency is used for irradiation and a lock-in amplifier is employed for detection.The polarity of induced potential depends on the structure of potential barriers and surface states of samples.The contrast of SEBIV images in SEM changes with irradiation time and e-beam intensity.