新型3-(5-羟戊基)-6-芳基-7H-1,2,4-三唑并 [3,4-b][1,3,4]噻二嗪化合物的合成及其植物生长调节活性

根据活性亚结构拼接原理，以ε-己内酯和硫代对称二氨基脲为基体，制得中间体3-(5-羟戊基)-4-氨基-5-巯基-1,2,4-三唑，再与ω-卤代芳基乙酮反应合成了8个新的3-(5-羟戊基)-6-芳香基-7H-1,2,4-三唑并[3,4-b][1,3,4]噻二嗪类化合物,其结构经¹H NMR、 ¹³C NMR、 IR和元素表征。采用室内培养皿法考察了化合物的植物生长调节活性。结果表明： 3a~3h对双子叶萝卜茎和单子叶小麦茎的生长均有显著的抑制作用，浓度为10 mg·L^-1时，抑制率为50%~69%，浓度为50 mg·L^-1时，抑制率达到88%以上，3c对两种植物茎生长的抑制率均达到100%。     

光催化氧化还原体系中硝酮与芳香叔胺的自由基偶联反应

通过氮α-位碳自由基构造氮α-位碳-碳键是合成含氮有机化合物的重要方法. 近期, 利用可见光催化氧化芳香叔胺—氮α-位去质子化形成氮α-位碳自由基的原理发展了一系列新颖的自由基加成(偶联)反应, 成为氮α-位碳自由基化学发展的重要方向. 本文应用Ir-催化剂, 实现了光催化氧化还原体系中硝酮与芳香叔胺的自由基偶联反应, 高效地合成β-氨基羟胺化合物. 该反应条件温和、操作简单, 具有较高的原子经济性, 且对于各种链状、环状以及手性硝酮都具有良好的适用性, 产物可方便地转化为重要的邻二胺化合物.     

Gallium Nitride Room Temperature α Particle Detectors

Gallium Nitride （GaN） room temperature α particle detectors are fabricated and characterized, whose device structure is Schottky diode. The current-voltage （I- V） measurements reveal that the reverse breakdown voltage of the detectors is more than 200 V owing to the consummate fabrication processes, and that the Schottky barrier and ideal factor of the detectors are 0.64 eV and 1.02, respectively, calculated from the thermionic transmission model. ^241Am α particles pulse height spectra from the GaN detectors biased at -8 V is obviously one Gauss peak located at channel 44 with the full width at half maximum （FWHM） of 15.87 in channel. One of the main reasons for the relatively wider FWHM is that the air between the detectors and isotope could widen the spectrum.     

硅在cBN单晶合成中的行为

 实验制备了复合氮化物Li₈SiN₄，并对合成温度、合成时间、气流量等因素的影响以及产物的稳定性进行了讨论。研究了Li₈SiN₄作为触媒添加剂时硅在cBN单晶合成中的作用。结果表明：cBN晶体多为截角八面体，晶面致密光滑；硅参与cBN的合成反应，并以SiO₂的形式沉积在cBN表面。     

Structural and Optical Properties of Zinc Nitride Films Prepared by Pulsed Filtered Cathodic Vacuum Arc Deposition

Polycrystalline zinc nitride films are deposited on Coming 7059 glass substrates by pulsed filtered cathodic vacuum arc deposition （PFCVAD）. The crystallographic structure is studied by means of x-ray diffraction. These measurements show that all the films are crystallized in the cubic structure, in a preferred orientation along the （332） and （631） directions. Weak XRD signal shows small crystallites distributed in an amorphous tissue. A small improvement of crystallinity is observed with annealing. Optical parameters such as absorption, energy band gap, Urbach tail, extinction coefficients have been determined. The Urbach tail energy is decreased with annealing at 500℃ for one hour. Energy band gap values are found to be increased by annealing.     

Energy of a Polaron in a Wurtzite Nitride Finite Parabolic Quantum Well

The effects of electron-phonon interaction on energy levels of a polaron in a wurtzite nitride finite parabolic quantum well （PQW） are studied by using a modified Lee-Low-Pines variational method. The ground state, first excited state, and transition energy of the polaron in the GaN/Al0.3Ga0.7N wurtzite PQW are calculated by taking account of the influence of confined LO（TO）-like phonon modes and the half-spaee LO（TO）-like phonon modes and considering the anisotropy of all kinds of phonon modes. The numerical results are given and discussed. The results show that the electron-phonon interaction strongly affects the energy levels of the polaron, and the contributions from phonons to the energy of a polaron in a wurtzite nitride PQW are greater than that in an A1GaAs PQW. This indicates that ehe electron-phonon interaction in a wurtzite nitride PQW is not negligible.     

芳香化合物绿色硝化催化剂研究进展

本文综述了近年来用于芳香化合物绿色硝化反应的较有工业化前景的三种催化剂的研究进展,包括固体酸、金属硝酸盐、稀土杂合物等,着重探讨了上述催化剂对硝化反应选择性的作用机理。     

Ⅲ族氮化物异质结构二维电子气研究进展

本文总结了近年来Ⅲ族氮化物半导体异质结构二维电子气的研究进展。从Ⅲ族氮化物材料晶格结构和特有的极化性质出发,重点讨论了AlGaN/GaN异质结构中二维电子气的性质,总结分析了异质结构中Al组分、势垒层厚度、应变弛豫度、掺杂等对二维电子气浓度和迁移率的影响,同时还涉及AlGaN/GaN/AlGaN,AlGaN/AlN/GaN和AlGaN/InGaN/GaN等异质结构二维电子气性质。     

Influence of Thickness of Field Emission Characteristics of Nanometre Boron Nitride Thin Films

Nanometre boron nitride (BN) thin films with various thickness (54-135nm) were prepared on Si(100) by rf magnetic sputtering physical vapour deposition. The field emission characteristics of the BN thin films were measured in an ultrahigh vacuum system. A threshold electric field of 11V/μm and the highest emission current density of 240μA/cm^2 at an electric field of 23V/μm were obtained for the about 54-nm-thick BN film. The threshold electric field increases with increasing the thickness in the nanometre range. The Fowler-Nordheim plots show that electrons were emitted from BN to vacuum by tunnelling through the potential barrier at the surface of BN thin films.