电沉积－退火工艺制备铜铟硒太阳能电池薄膜及表征

利用电沉积硒气氛下后续退火的工艺制备出了高结晶质量的铜铟硒薄膜．通过X射线衍射、扫描电子显微镜、拉曼光谱、紫外-可见-近红外光谱和阻抗谱技术对退火后的铜铟硒薄膜进行表征,结果表明530 oC硒化退火后的铜铟硒薄膜具有四方的黄铜矿晶体结构,晶粒尺寸达到微米量级,光学带隙为0.98 eV,经过KCN溶液去除表面高导电性的铜硒化合物后铜铟硒薄膜的载流子浓度在10¹⁶ cm^-3量级．利用硒化退火的铜铟硒薄膜作为光吸收层制备了结构为AZO/i-ZnO/CdS/CIS/Mo/glass的太阳能电池,在AM1.5光照条件下对其电流-电压特性测试后发现面积为0.2 cm²的电池可以达到0.96％的能量转换效率,并对限制电池效率的原因做出了初步的分析和讨论.     

107号超重元素的测定

 一个放射化学合作组利用瑞士保罗谢勒研究所（ＰＳＩ）的菲利普回旋加速器测定了１０７号超重元素（Ｂｏｈｒｉｕｍ）的挥发性．该项研究的关键问题是要使用较长寿命（约１５秒）的同位素,这是１９９９年年初在美国伯克利实验室中探测到的．虽然科学家们已经鉴别出几个比还重的元素,包括去年在伯克利８８英寸回旋加速器上发现的１１６号和１１８号元素,还有在杜布纳所发现的１１４号元素,但最重的这些元素在周期表里的正确位置仍在研究中．一在发现新元素的实验中,只展示了有很重的新原子核的存在,但没有得到有关它们的化学性质的信息．目前,１０６元素（ｓｅａｂｏｒｔｇｉｕｍ）的化学性质已得到广泛研究．     

EACVD中用氢原子谱线测定电子平均能量

采用蒙特卡罗方法，对EACVD中氢原子的发射过程进行了模拟。给出了由氢原子谱线测定电子平均能量的方法，结果对EACVD生长金刚石薄膜过程中实时监测电子平均能量，进而可以有效地控制工艺条件，生长出高质量的金刚石薄膜具有重要意义。     

Nano-Crystalline Diamond Films with Pineapple-Like Morphology Grown by the DC Arcjet vapor Deposition Method

A nano-crystlline diamond film is grown by the dc arcjet chemical vapor deposition method. The film is characterized by scanning electron microscopy, high-resolution transmission electron microscopy （HRTEM）, x-ray diffraction （XRD） and Ftaman spectra, respectively. The nanocrystalline grains are averagely with 80hm in the size measured by XRD, and further proven by Raman and HRTEM. The observed novel morphology of the growth surface, pineapple-like morphology, is constructed by cubo-octahedral growth zones with a smooth faceted top surface and coarse side surfaces. The as-grown film possesses （100） dominant surface containing a little amorphous sp2 component, which is far different from the nano-crystalline film with the usual cauliflower-like morphology.     

量子关联与原子间相互作用距离关系的研究

本文将两个二能级原子注入一个腔中,用共生纠缠的方法来度量两原子之间的纠缠并推出它们之间的量子失协,还给出了原子与环境之间的共生纠缠与量子失协的计算公式,讨论了原子自发衰变率的变化对量子纠缠及失协的影响,及不同的初始状态情况下,纠缠及失协随原子距离的演化情况。结果表明：原子自发衰变率减小,原子与环境之间的量子纠缠及失协增加;选择不同的初态,可以控制原子间出现纠缠死亡的现象或量子失协为零的状态。     

Mo/Si aperiodic multilayer broadband reflective mirror for 12.5-28.5-nm wavelength range

Aperiodic molybdenum/silicon (Mo/Si) multilayer designed as a broadband reflective mirror with mean reflectivity of 10% over a wide wavelength range of 12.5-28.5 nm at incidence angle of 5° is developed using a numerical optimized method. The multilayer is prepared using direct current magnetron sputtering technology. The reflectivity is measured using synchrotron radiation. The measured mean reflectivity is 7.0% in the design wavelength range of 12.5-28.5 nm. This multilayer broadband reflective mirror can be used in extreme ultraviolet measurements and will greatly simplify the experimental arrangements.     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

沉积温度对硬质合金表面沉积的SiC薄膜的影响

采用强电流直流伸展电弧等离子体CVD技术,以Ar、H2和四甲基硅烷(TMS)为先驱气体,在YG6硬质合金衬底表面制备了SiC薄膜。实验结果表明:随着沉积温度的升高,薄膜的致密性和平整度提高;但当沉积温度过高时,SiC薄膜的表面开始具有含非晶碳球和呈花瓣状的疏松结构。在合适的沉积温度下,SiC薄膜的致密性和平整度较好,且其具有较好的附着力和一定的强度,而这样的SiC薄膜可以阻止在金刚石涂层沉积过程中硬质合金中含有的Co对金刚石相沉积过程的有害作用。     

Au@ZrO2空心纳米微球的制备及其催化性质

以Stober法合成了不同粒径的SiO₂微球。以这些SiO₂微球为硬模板,通过ZrOCl₂前驱体吸附和水解制备得到了ZrO₂@SiO₂复合物,然后用HF溶解去除二氧化硅模板剂,制备得到ZrO₂空心球。以ZrO₂空心球为载体,采用沉积-沉淀法（DP）合成了Au@ZrO₂纳米空心微球。考察了Au@ZrO₂纳米空心微球在对硝基苯胺还原反应中的催化性能。研究结果表明,所合成的SiO₂微球粒径大小均一、形状规则、分散性好;ZrO₂空心微球大小及比表面积可以通过硬模板SiO₂微球粒径进行有效控制;与Au@ZrO₂实心微球相比,Au@ZrO₂空心微球在对硝基苯胺还原反应中表现出良好的催化性能,当反应温度为45℃、反应7 min时,对硝基苯胺能够完全转化为对苯二胺。