等离子体噻吩聚合膜的研究及I+注入的掺杂效应

以噻吩为单体,在等离子体环境中聚合成致密的有机膜。利用Rutherford背散射(RB2S)和质子弹性反冲(ERD)、傅里叶红外谱(FTIR)测定了膜的成分和结构;从近红外-可见-紫外光的反射和透射谱,运用传递矩阵方法研究了膜的光学性质;此外,还探讨了24keV的I⁺离子束的注入对等离子体噻吩聚合膜的掺杂效应。结果表明,注入层内电荷载流子的输运机理可用Mott的可变自由程跳跃(VRH)理论给以解释。 关键词：     

Infrared Spectroscopic Analysis of Chrysene and 1.2-Benzanthracence in Wax films

Chrysene and 1.2-benzanthracene are successfully doped in a solid wax film and their vibrational spectra in gooo--400cm^-1 are discussed. The harmonic frequencies and relative intensities of both the molecules observed in the film are compared with theoretical values calculated by the density functional theory （DFT） model as well as with the previous experimental data. The effects on spectra due to change of matrix and some additional bands observed in the wax film are also reported. Excellent agreement in the spectral positions and strengths between the experiments and DFT values are found.     

Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

BRD96N光调制吸收增强现象的实验研究

通过光谱响应特性实验和记录／读出图像实验，研究了基因变异型细菌视紫红质（BR_D96N）分子膜对单色光的光调制特性.发现BR_D96N分子膜在550nm—600nm范围内对调制光有吸收增强的现象，且对此范围内不同波长的单色光其调制程度有差异.利用曲线拟和方法发现550nm—600nm吸收增强的变化过程分为快过程和慢过程，其对应的时间常数分别为30s和5min.利用强度调制器的吸收强度与图像灰度之间的关系，分析了560nm—600nm范围内出现图像反转的实验现象. 关键词： 细菌视紫红质D96N分子膜 光谱响应 吸收增强现象 图像反转现象     

Yb:FAP和Yb:C3S2-FAP晶体光谱的温度特性和选择激发

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Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films

Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition＇parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of （002） crystal planes of the He-charged Ti film shifts to a lower angle and that of （100） crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening.     

Si衬底上ZnSe外延膜的低压MOCVD生长

以硒化氢（H2Se）和二甲基锌为源材料，生长温度是300℃时，用低压金属有机化学气相沉积（LP－MOCVD）系统在Si(111)衬底上外延生长了ZnSe薄膜。通过X射线衍射（XRD）、扫描电子显微镜的能量色散（EDS）以及光致发光（PL）实验验证ZnSe外延膜的质量，在X射线衍射谱中只有一个强的ZnSe(111)面衍射峰，这说明外延膜是（111）取向的单晶薄膜，在能量色散谱中除了Si,Zn和Se原子外，没有观测到其他原子，说明ZnSe外延膜中杂质含量较少。ZnSe外延膜中Zn/Se原子比接近1，有较好的化学配比。在ZnSe外延膜的77K光致发光谱中没有观测到与深中心发射相关的发光峰，表明ZnSe外延膜的晶格缺陷密度较小。77K时的近带边发射峰447nm在室温时移至465nm附近。     

第一届掺杂纳米材料发光性质学术会议

该会议为中国物理学会发光分会、中国稀土学会发光专业委员主办的国内首次纳米材料发光性质专题学术研讨会，旨在通过大会报告、专题研讨等活动，总结、交流近年来掺杂纳米发光材料及其相关应用领域所取得的研究进展和成果。在此基础上凝练科学目标、探讨和规划未来的学科发展方向并集中国内的优势资源攻克难点的科学问题，使我国在该研究领域更具国际竞争力。会议诚邀请该领域知名的专家和学者参加；在探索纳米世界之余，也将带您领略海南美丽而独特的自然景观和人文奇迹。