不同有机碱对乙酰水杨酸铽配合物荧光性能的影响

有机碱对参与合成的铽配合物荧光性质具有非常大的影响。利用三乙胺(TEL)、三丙胺(TPL)和三丁胺(TBL)分别作为有机碱、乙酰水杨酸(aspirin)作为配体在无水乙醇溶液中制备了3种铽配合物溶液。通过紫外光谱、荧光光谱、绝对量子产率和荧光寿命的表征发现3种铽配合物的确具有不同的荧光性能。相同浓度条件下,随着有机胺碳链长度的增加,3种铽配合物的荧光发射强度依次增大。由3种有机碱所得到的铽配合物Tb(aspirin)3TEL、Tb(aspirin)3TPL和Tb(aspirin)3TBL的绝对量子效率分别为11.41%,12.85%和18.63%,在无水乙醇溶液中的荧光寿命分别为6.316 956×10-4,7.018 974×10-4,7.346 807×10-4s。实验结果表明,有机碱参与了铽配合物的分子组成。     

Tight—binding calculation of the electronic states of bulk—terminated GaAs（311）A and B surfaces

We have carried out theoretical investigations on the electronic structure of GaAs(311)A and GaAs(311)B surfaces. The bulk electronic structure of GaAs has been described by the second-neighbour tight-binding formalism and the surface electronic structure was evaluated via an analytic Green function method. First, we present the surface band structure together with the projected bulk band of both Ga-terminated and As-terminated for GaAs(311)A and GaAs(311)B surfaces, respectively. In each case, the number of surface states is determined, and the localized surface features and orbital properties of these surface states along Γ-Y-S-X-Γ high symmetry lines of the surface Brillouin zone are discussed. For the Ga-terminated GaAs(311)A (1×1) surface, we have tested two possible structure models, i.e. "the bridge site" and "the hollow site" models. In comparison with the angle-resolved photoelectron spectroscopy studied recently, the results have shown that the surface electronic states of the hollow site model are in good agreement with the experiments, whereas those of the bridge site model are not. So we have concluded that the hollow site model is favourable for the Ga-terminated GaAs(311) (1×1) surface and the bridge site model should be excluded.     

Magnetic properties of TbMn6Sn6-xGax (x=0.0－1.2) compounds

Effects of Ga substitution for Sn on the structure and magnetic properties of TbMn₆Sn_6-xGa_x (x=0.0－1.2) compounds have been investigated by means of x-ray diffraction, magnetization measurement and ¹¹⁹Sn M?ssbauer spectroscopy. The substitution of Ga for Sn results in a decrease in lattice constants and unit-cell volumes. The magnetic ordering temperature decreases monotonically with increasing Ga content from 423 K for x=0.0 to 390 K for x=1.2. At room temperature, the easy magnetization direction changes from the c-axis to the ab-plane. This variation implies that the substitution of Ga for Sn leads to a decrease in the c-axis anisotropy of the Tb sublattice. An increase in the non-magnetic Ga concentration results in a monotonic decrease of the spontaneous magnetization M_s at room temperature. Since there are three non-equivalent Sn sites, 2c (0.33, 0.67,0), 2d (0.33, 0.67,0.5) and 2e (0,0,0.34) in the TbMn₆Sn_6-xGa_x compounds, the ¹¹⁹Sn M?ssbauer spectra of the TbMn₆Sn₆ and TbMn₆Sn_5.4Ga_0.6 compounds can be fitted by three sextets. The hyperfine fields (HFs) decrease in the order of HF(2d)>HF(2e)>HF(2c), which is in agreement with the magnetic structure.     

Magnetic Properties and Magnetoresistance Effect of YMn6 Sn6—x Crx （x=0—0.8） Compounds

The magnetic properties and magnetoresistance effect of YMn6Sn6-x Crx(x=0-0.8) compounds have been experimentally studied by magnetic properties and resistivity measurements in the applied field range 0-5T.The compound (x=0.8) displays a ferromagnetic behaviour,while the compounds (x=0-0.4) display an antiferromagnetic behaviour in the whole ordering temperature range.The compounds(x=0.5,0.6) experienced a transition from an antiferromagnetic state to a ferromagnetic state with increasing temperature.The compound with x=0.8 is rapidly saturated in the lower magnetic field with saturation magnetization of 35.92emu/g.The compounds(x=0-0.6) display a field-induced metamagnetic transition,and the threshold fields decrease with increasing Cr content.The cell-volume V of compounds(x=0-0.8) increases,and the ordering temperature decreases with the increasing Cr content.A large magnetoresistance effect was observed for the compounds (x=0.4,0.5),and the maximum absolute value at 5K are 32% and 24% under 5T for x=0.4 and x=0.5,respectively.     

高灵敏度化学光谱法测定金、铂和钯

三正辛胺负载泡塑对贵金属有极强的吸附能力。本文通过对三正辛胺负载泡塑对金、铂、钯吸附性能的研究，以及NO3^-和Fe^3 离子干扰的消除，拟定了金、铂、钯的快速、简便、富集系数高的三正辛胺负载泡塑分离法，一次摄谱的测定范围（10g样品）为：Au0.1-5000ng/g；Pt0.2-5000ng/g；Pd0.1-1000ng/g。     

塑料脱模剂一组分的光谱分析

柱层析色谱分离性能优良的新型塑料脱模剂，纯化后得一主要未知组分。用元素分析、红外光谱、核磁共振氢谱研究其结构特征，对其盐酸酸化前后红外光谱吸收峰及核磁带进行了归属分析并确定结构。结果表明，该组分为一表面活性剂N，N-二羟乙基十二烷基胺。这为新型脱模剂的产品开发提供了依据。     

镧与真空沉积银纳米粒子的金属间化合

根据HumeRothery规则,分析了银与镧两元素之间形成金属间化合物的倾向性,并根据真空蒸发沉积的条件,分析了在真空蒸发沉积情况下镧与银之间形成金属间化合物的可能性.用X射线光电子能谱化学位移方法对真空蒸发沉积的银、镧薄膜进行了分析,结果表明在真空沉积条件下镧与银之间的确形成了金属间化合物. 关键词： 金属间化合物 镧 银 纳米粒子     

退火温度对a-Se0.70Ge0.15Sb0.15薄膜的结构和光学性质的影响

研究了退火温度对Se0.70Ge0.15Sb0.15薄膜的影响.通过热蒸发技术,在300K温度下将大块无定形Se0.70Ge0.15Sb0.1s沉积在石英和玻璃衬底上.研究发现,未经过退火处理的薄膜结构和在300K,1.33×10-5Pa下退火1小时后的薄膜结构都是无定形结构,而在同样气压470K温度下退火1小时的薄膜有结晶现象.通过在300 2 500nm范围内垂直入射光方向上透射率和反射率的测试,研究了薄膜的一些光学参数,如消光系数(k),折射系数(n)和吸收系数(a).研究发现,n和k同热处理温度有关.通过光学数据的分析,得到了不同条件下薄膜的间接带隙宽度(Enong),未经过热处理薄膜的Enong是1.715±0.021eV,300K下退火薄膜的Enong是1.643±0.021eV,470K下退火的Enong是1.527±0.021eV.退火温度降低了带隙宽度Enong,但增加了带尾eo这种效应可以根据Mott和Davis提出的多晶体系中态密度来解释.     

生长温度对In0.53Ga0.47As/InP的LPMOCVD生长影响

利用LPMOCVD技术在InP衬底生长了InxGa1-xAs材料，获得表面平整．光亮的In0.53Ga0.47As外延层。研究了生长温度对InxGa1-xAs外延层组分、表面形貌、结晶质量、电学性质的影响。随着生长温度的升高，为了保证铟在固相中组分不变，必须增加三甲基铟在气相中的比例。在生长温度较高时，外延层表面粗糙。生长温度在630℃与650℃之间，X射线双晶衍射曲线半高宽最窄，高于或低于这个温度区间，半高宽变宽。迁移率随着生长温度的升高而增加,在630℃为最大值，然后随着生长湿度的升高反而降低。生长温度降低使载流子浓度增大，在生长温度大于630℃时载流子浓度变化较小。     

GaAs与InP半导体光导开关特性实验研究

利用Ⅲ-Ⅴ族化合物半导体材料砷化镓(GaAs)和磷化铟(InP)及其掺杂材料制作的光导开关具有很好的时间响应及高功率输出特性.比较了这两种材料制作的不同电极间隙类型的光导开关的开关时间响应速度、导通光能与饱和触发激光能量、线性与非线性工作模式及触发稳定性等特性.结果表明,利用InP和GaAs两种材料制作的光导开关都具有达到皮秒级的超快时间响应,其对时间最佳响应与偏置电场有关.两种开关的多次触发时间抖动在几个皮秒范围,输出电压峰峰值抖动优于10%.GaAs开关的非线性工作电场阈值比InP开关低,更容易实现非线性输出.