超声波作用下的制冷剂水合物结晶过程研究

首先分析了超声波对制冷剂水合物成核生长的影响机理,然后进行了实验研究。结果表明,超声波对水合物的结晶生长有明显的影响,阶梯形的超声探头作用下的成核引导时间比指数形锥体引导时间长,促进水合物生长的超声波功率P范闱是58W相似文献   

A New Cytotoxic Acetogenin from the Seeds of Annona squamosa

A New Annonaceous acetogenin,squamostolide(1),was isolated from the seeds of Annona squamosa.Its structure was elucidated based on spectroscopic methods and comparison with known compounds.It is the first example of Annonaceous acetogenin with each of the two ends of the aliphatic chain bearing a γ-lactone.Thenew compound exhibited cytotoxic activity in vitro against bel-7402 and CNE2 human tumor cell lines.     

The Synthesis of Glycoglycerolipids

A convenient synthetic route was developed for the synthesis of the novel glycolipids: 1,2-di-O-acyl-3-O-(2‘-acylamide-2‘-denxy-ct-D-glucopyranosyl)-sn-glycerols. 10 new compounds of glycolipids with different acyl groups were obtained.     

HL-1M装置锯齿活性的时空结构分析

等离子体中心的MHD现象可以用软X射线针孔相机进行观测。在HL-1M装置上我们建立了一套由3个软X射线针孔相机共60道探测弦组成的探测系统。奇异值分解(SVD)方法能将信号分解成正交的空间和时间两组本征向量，并且可以将复杂的时空成份分离开来，使各种不同成份的空间结构和时间演变规律一一对应，从而便于了解MHD现象的重复时间和特征半径。     

细胞神经网络的数学理论(Ⅰ)

重新系统地研究了细胞神经网络的数学理论,涉及该网络的耗散性、平衡位置的数目及表示、平衡态的全局稳定性等。     

溶胶—凝胶法制备SiO2基片Er^3＋：Al2O3光学薄膜

用溶胶—凝胶法在SiO2基片上提拉制备了掺Er^3 ：Al2O3光学薄膜。采用扫描电子显微镜、原子力显微镜、差热—热重分析仪、X射线衍射仪研究了掺Er^3 ：Al2O3光学薄膜的肜貌和结构特性。在900℃烧结后，SiO2基片上提拉15次形成厚度8μm掺摩尔比0．01Er^3 的面心立方结构γ-Al2O3薄膜具有明显(110)择优取向，掺摩尔比0．01Er^3 对γ—Al2O3的品体结构和结晶生长过程木产生显著影响。薄膜具有均匀多孔结构，平均粒径为30～100nm，平均孔径为50～100nm，表面起伏度为10～20nm。掺摩尔比0．01Er^3 ：rAl2O3薄膜，获得了中心波长为1．534μm(半峰全宽为36nm)的光敛发光谱。     

Low-Temperature Growth of Polycrystalline silicon Films by SiCl4／H2 rf Plasma Enhanced Chemical Vapour Deposition

Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H.