Ni-Si多层膜中固态非晶化反应的热力学与动力学过程

研究了Ni/非晶Si(a-Si)多层组分调制膜(ML)中界面上的固相反应。根据计算的亚稳自由能图,对界面上固相反应形成非晶态进行了热力学与动力学的分析。提出了Ni/a-Si多层膜中的固相反应的动力学模型。 关键词：     

透镜空间L~1(p)上向量丛的示性类

本文讨论了透镜空间 L1( p)的上同调环中生成元的运算性质 ,进而利用 L1( p)的 KO -结构得到了L1( p)上任一向量丛的全 Stiefel-Whitney类     

不动点集是Do1d流形P(2m+1,2n+1)的对合

本文证明了具有光滑对合T的(4n+2m+3+κ)-维闭流形,如果对合的不动点集为F=P(2m+1,2n+1),其中2m+2n=2+22+...+2b(2b为2n二幂展开式的最大二幂),m=4a或m=4a+3(a为非负整数),0＜κ≠2,则对合T协边于零.     

Abel群Xl~2(R)与2-PSF环

本文引进了Abel群XL2（R）和2-PSF环，利用它们刻划了PSF环．作为应用，研究了群环和二次域上的模结构．     

14β-甲磺酰氧基对映-贝壳杉二萜重排反应

本文研究了一类具有15-C与16-C单键的14β-甲磺酰氧基对映-贝壳杉烷(烯)(6,7和8)在Zn-EtOH体系中的重排反应, 它们均能重排成6, 7, 5, 5并环系统的化合物3, 12, 13a和13b。8重排时生成一个8-OEt化合物, 为这类化合物重排时经过阳离子中间体提供了一个证据。     

Thermal Rate Constants of the N（^4S）＋O2（X^3∑g^-） → NO（X^2Ⅱ） ＋O（^3P） Reaction on the ^2A′ Potential Energy Surface

A quasiclassical trajectory study with the sixth-order explicit symplectic algorithm for the N（^4S）＋O2（X^3∑g^-） → NO（X^2Ⅱ） ＋O（^3P） reaction has been reported by employing a new ground potential energy surface. We have discussed the influence of the relative translational energy, the vibrational and rotational levels of O2 molecules on the total reaction cross section. Thermal rate constants at temperatures 300, 600, and 1000 K determined in this work for the reaction are 4.4 × 10^7, 1.8 × 10^10, and 3.1 × 10^11 cm^3mol^-1s^-1, respectively. It is found that they are in better agreement with the experimental data than previous theoretical values.     

类镍W46+、Au51+偶极跃迁的相对论多组态计算

本文基于全相对论Dirac-Fock方法,分别用GRASP0和GRASP2原子结构程序包计算了金和钨的类镍离子3d10-3d94p、3d10-3d94f、3p63d10-3p53d104s和3p63d10-3p53d104d之间的电偶极跃迁波长和振子强度,得到与实验相一致的结果;同时分析了组态相互作用和有限核体积分布效应对高Z高剥离态多荷电离子的原子结构参数的影响.     

Sansalvamide A固相合成新方法

报道了Pd催化丁基二乙基硅烷树脂与N-Boc-4-溴代苯丙氨酸甲酯直接反应形成Si—Ar键一步构建出硅基连接分子的新方法, 并采用Boc策略增长肽链, 以PyBOP (benzotriazole-1-yl-oxy-tris-pyrrolidino-phosphonium hexafluoro- phosphate)为环合剂固相合成了sansalvamide A.     

Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.