托卡马克能量约束及自举电流效应的初步考虑

基于Lee等人的离子温度梯度模导致的反常热能输运系数,本文研究了辅助加热托卡马克等离子体的能量约束行为,并对自举电流的效应作了初步考虑。结果表明,计算得到的能量约束时间随等离子体电流I_p和托卡马克大半径R增大而增长,随注入功率P_t、环向场B_t以及等离子体小半径α的增大而缩短。这些结果与Kaye-Goldston的经验约束定标具有相同的趋势。自举电流的存在总是导致能量约束时间的增加,当自举电流与总电流的比值γ较小时,能量约束时间的增加率约为γ/2。此外,自举电流将造成锯齿反转半径的减小。     

静电堵漏串级镜MM—4U贩约束位形的理论研究

本文分析了双会切静电堵漏串级磁镜ＭＭ－４Ｕ中粒子损失的可能机制，考虑了 等离子体粒子能量的切断，从平衡的Ｖｌａｓｏｖ方程的解出发，数值求解了一组静态的达朗倍尔方程，即Ｐｏｉｓｓｏｎ方程和Ｍａｘｗｅｌｌ方程，得到了等离子体电位，密度及非中性度（净余电子数密度）分布。结果表明，堵漏电压及堵漏电极板的几何位形，磁场位形及磁场大小，电子温度电子－离子温度比在串级磁镜的束位形的形成中起着重要的作用。     

正弦波位相差的测量及其误差估算

大学物理实验中,位相差概念是从两正弦波振动合成引入的,测量位相差实验电路如图1(a)。测量时,将一正弦信号与其经RC电路移相后的信号分别加在示波器垂直偏转板与水平偏转板,则荧光屏上会显现出图1(b)所示的椭圆,这时,根据公     

Study of hot bands in the B2Σ+u-X2Σ+g system of C-2 anion

Optical heterodyne magnetic rotation enhanced velocity modulation spectroscopy was employed to observe the visible absorption spectra of the B^2Σ^+_u-X^2Σ^+_g electronic transition of C^-_2. Four hot bands (0,1), (1,2), (2,3) and (3,4) have been observed and the band (3,4) is measured directly for the first time, so far as we know, by absorption. A rotational analysis was carried out to obtain molecular constants. With the Franck－Condon principle and the vibrational Boltzmann distribution, we have estimated the vibrational temperature of C^-_2 to be about 3000K.     

Crystal-Orientation Dependent Evolution of Edge Dislocations from a Void in Single Crystal Cu

The micro-void growth by dislocation emission under tensile loading is explored with focus on the influence of crystal orientations. Based on the elastic theory, a dislocation emission criterion is formulated. It is predicted that the preferential location of dislocation nucleation and its threshold stress are dependent on the crystal orientation. Large-scale molecular dynamics （MD） simulations are also performed for single crystal copper to illustrate the dislocation evolution pattern associated with a nano-void growth. The results are in line with those given by the theoretical prediction. As revealed by MD simulations, the characteristics of void growth at micro-scale depend greatly on the crystal-orientation.     

碳分子线基态特性理论研究

从第一原理出发,利用密度泛函理论B3LYP系统研究了碳分子线Cn(n＝3～10)的电子结构特性.对优化结果分析发现,由于离域效应的作用,当n为奇数时,分子线基态为单重态,反之,当n为偶数时,三重态为其稳定的基态.对其电子结构分析可得,随着n的增加,体系能量逐渐降低;同时本文确定了分子线体系最高占据轨道HOMO能量EH、最低未占据轨道LUMO能量EL与n的关系式,即EHn-2＜EHn＜EHn+2,ELn-2＞ELn＞ELn+2.因而碳分子线的费米能级会表现出特有的奇偶性.该工作将有利于准确认识分子器件的伏安特性,设计出良好性能的分子器件.