硅色敏器件对复色光色差辨识能力的数值分析

对复色光的光谱功率分布和色敏器件光谱响应的实验曲线进行了函数拟合，采用Mathematica 4．2计算了具有不同峰值波长和半高宽的高斯分布的复色光在色敏器件中产生的电流比．计算结果表明，待测复色光的峰值波长和半高宽变化对两种典型的色敏器件的输出信号影响的权重比分别为100：1和10：1。权重比说明色敏器件的输出电流比随峰值波长和半高宽的变化非常灵敏，但两者权重不同，其中峰值波长的变化影响更为显著，是影响复色光颜色变化的主要因素．数值分析的结果表明，硅双结色敏器件对复色光色差有良好的辨识能力．两种器件权重比的差异说明了器件制作工艺与其辨识能力的关系，为器件合理设计提供了理论依据．     

Time—Resolved Photoluminescence Studies of AlInGaN Alloys

We study the two samples of AlInGaN,i.e.,1-μm Gan grown at 1030℃ on the buffer and followed by a 0.6μm-thick epilayer of AlInGaN under the low pressure of 76 Torr and the AlInGaN layer deposited diectly on the buffer layer without the high-temperature GaN layer,by temperature-dependent photoluminescence(PL) spectroscopy and picosecond time-resolved photoluminescence(TRPL) spectroscopy.The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures,indicating significant disorder in the material.We attribute the disorder to nanoscale quantum dots or discs of high indium concentration.Temperature dependence of dispersive exponent β shows that the stretched exponential decay of the two samples comes from dfferent mechanisms.The different depths of the localization potential account for the difference,which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.     

Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

photoluminescence (PL) lrom one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavitles are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx:H/a-SiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNx:H) thin film. By comparison, the wide emission band width 208nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of a-SiNx:H. A linewidth of Δλ=11 nm and a quality factor of Q=69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.     

酞菁锌参杂二氧化硅凝胶基质的光谱学特征

利用溶胶-凝胶技术将四磺化酞菁锌（ZnPcS4）成功地引入到了二氧化硅凝胶基质中，制备了均匀掺杂的有机/无机复合干凝胶。研究ZnPcS4分子在溶胶-凝胶过程中紫外-可见吸收光谱的变化规律以探索其在复合体系中的存在状态。实验表明，在溶胶阶段，随着时间的延长，紫外-可见吸收光谱中单体的吸收峰强度增大，说明凝胶中酞菁单体的浓度增大；而形成凝胶后，随着时间的延长，紫外-可见吸收光谱中单体的吸收峰强度减小，二聚体的吸收峰强度增大，说明由于体系结构和微化学环境的变化，酞菁分子趋向于聚合。     

类锂铝复合机制产生X光激光的等离子体状态

本文从速率方程出发,讨论了类锂铝复合等离子体的激发态结构,衰减常数,反转率和小信号增益等表征介质增益特性的物理量以及它们随电子温度,电子密度和光子逃逸几率的变化。找到了进行类锂铝离子通过复合机制产生X光激光设计应创造的等离子体状态目标区域。还讨论了这些物理量随原子序数变化的定标律。     

硫烷化学

硫烷是一类具有三中心四电子过价键的化合物，它即可以作为特殊的反应试剂，又是有机反应的重要中间体。本文对其结构，合成，性质及其应用作一简单综述。