等离子体质谱-氧气碰撞池技术测定复杂基体样品中痕量砷和硒

本实验采用氧气碰撞/反应池技术促使分析物生成氧化物离子,避开原来的双电荷离子干扰.同时采用负的动能歧视效应来改善氧化物离子的通过率,对在新的谱线位置上出现同量异位素干扰辅以数学校正方法.实验发现, 有机试剂的增敏效应同样适合于As和Se的氧化物离子,1%甲醇溶液用于改善As和Se的分析灵敏度.在解决这类样品中微量As和Se的分析难题上,本方法显示了很好的效果,检出限为:As 0.0045μg/L, Se 0.0062μg/L,背景等效浓度:As 0.022μg/L,Se 0.025μg/L,分析结果的误差在标准物质的允许误差范围内,极大改善了实际样品分析结果的准确度.     

人肝细胞中总砷及砷代谢产物分析方法研究

本工作研究了冷消解、微波消解、高压密闭消解方法对超声破碎后细胞中砷的ICP-MS测定的影响,并与直接进样测定结果作对比.结果表明,微波消解法和高压密闭消解法效果较好,测定的精密度以RSD表示,分别为2.1%和1.2%;日间6次测定的精密度分别为1.2%和2.0%;元素加标回收率均在95.7%～108.1%范围.用4种消解方法对应的ICP-MS方法检出限介于0.74～0.93 μg/l之间,符合痕量分析要求.本工作还建立了高效液相色谱(HPLC)与电感耦合等离子体质谱(ICP-MS)联用技术对1 μmol/L染砷组细胞样品中的砷化学形态进行了初步探讨,发现细胞内除了存在无机砷(As(Ⅲ)和As(Ⅴ))外,同时存在二甲基砷(DMA)和一种甲基砷中间代谢产物.     

Research of Equilibrium Composition Map in Conic Quantum Dots

We present equilibrium composition maps in InGaAs/GaAs conic strained quantum dots, using the finite element method and quadratic programming optimization method. The axis-symmetric model is adopted. We compare the steep islands with the shallow islands and determine the influence of entropie energy. The difference of equilibrium composition maps between the single dot and the quantum dot stacks is also discussed.     

InAlAs/InGaAs Pseudomorphic High Eelectron Mobility Transistors Grown by Molecular Beam Epitaxy on the InP Substrate

A novel PMMA/PMGI/ZEP520 trilayer resist electron beam lithograph （EBL） technology is successfully developed and used to fabricate the 150 nm gate-length In0.7Ga0.3As/In0.52Al0.48As Pseudomorphic HEMT on an InP substrate, of which the material structure is successfully designed and optimized. A perfect profile of T？gate is successfully obtained. These fabricated devices demonstrate excellent dc and rf characteristics： the transconductance Gm, maximum saturation drain？to-source current IDSS, threshold voltage VT, maximum current gain frequency fT derived from h21, maximum frequency of oscillation derived from maximum available power gain/maximum stable gain and from unilateral power？gain of metamorphic InGaAs/InAlAs high electron mobility transistors （HEMTs） are 470 mS/mm, 560 mA/mm, -1.0 V, 76 GHz, 135 GHz and 436 GHz, respectively. The excellent high frequency performances promise the possibility of metamorphic HEMTs for millimeter-wave applications.     

Strain-Engineered Low-Density InAs Bilayer Quantum Dots for Single Photon Emission

We investigate the growth of strain-engineered low-density 1hAs bilayer quantum dots （BQDs） on GaAs by molecular beam epitaxy. Owing to increasing dot size and In composition of the upper QDs, low-density BQDs in a GaAs matrix with an emission wavelength up to 1.4 μm at room temperature are achieved. Such a wavelength is larger than that of conventional QDs in a GaAs matrix （generally of about 1.3μm）. The optical properties of the BQDs are sensitive to annealing temperature used after spacer layer growth. Significant decrease of integrated PL intensity is observed as the annealing temperature increases. At 10 K, single photon emission from the BQDs with wavelength around 1.3μm is observed.     

A Photovoltaic InAs Quantum-Dot Infrared Photodetector

A photovoltaic quantum dot infrared photodetector with InAs/GaAs/AIGaAs structures is reported. The detector is sensitive to normal incident light. At zero bias and 78K, a clear spectral response in the range of 2-7μm has been obtained with peaks at 3.1, 4.8 and 5.7μm. The bandgap energies of GaAs and Al0.2Ga0.8As at 78K are calculated and the energy diagram of the transitions in the Quantum-Dot Infrared Photodetector （QDIP） is given out. The photocurrent signals can be detected up to 110 K, which is state-of-the-art for photovoltaic QDIP, The photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure.     

LD端面泵浦声光调QNd:YVO_4/KTA 1.53μm光学参量振荡激光器

介绍了一台连续激光二极管(LD)端面泵浦声光调Q的高重复频率、高效率1.53μm人眼安全光学参量振荡激光器。激光基质材料采用Nd:YVO4晶体,采用按Ⅱ类非临界相位匹配切割、长20 mm的KTA晶体作为非线性光学晶体。在LD泵浦功率13.7 W,声光调Q重复频率60 kHz时,获得最高平均功率2.6 W的1.53μm信号光输出,泵浦光-信号光转换效率达到19%。在最高输出功率2.6 W下测得单脉冲宽度2.9 ns,对应的单脉冲能量和峰值功率分别为43.3μJ和15 kW。     

低温退火对重掺砷直拉硅片的氧沉淀形核的作用

通过对比研究重掺砷直拉硅片和轻掺n型直拉硅片经过低温(450—800℃)和高温(1000℃)两步退火的氧沉淀行为,阐明了低温退火对重掺掺砷直拉硅片的氧沉淀形核的作用.研究指出：重掺砷硅片在450℃和650℃退火时的氧沉淀形核比在800℃退火时更显著,这与轻掺硅片的情况截然相反;此外,与轻掺硅片相比,重掺砷硅片在450℃和650℃退火时氧沉淀的形核得到增强,而在800℃退火时氧沉淀的形核受到抑制.分析认为,重掺砷硅片在450℃和650℃退火时会形成砷-空位-氧(As-V-O)复合体,它们促进了 关键词： 重掺砷直拉硅片 氧沉淀形核 低温退火     

粉煤灰中微量有害元素砷的氢化物-原子荧光光谱法快速测定

采用王水分解试样 -氢化物发生原子荧光光谱法 (HG -AFS)测定粉煤灰中有害微量元素砷。方法回收率为 98 5 %～ 1 0 2 3 % ,相对标准偏差为 1 9%～ 4 8% ,该法具有快速、简便、灵敏、可测范围宽等优点 ,对探讨粉煤灰在农业土壤改良中的应用具有十分重要的意义     

氢化物原子荧光光谱法测定水中微量砷和硒

研究了氢化物发生-原子荧光光度法测定水中微量砷和硒的方法。结果表明,检出限:砷为0.0518μg/L,硒为0.0524μg/L;11次测定的相对标准偏差为0.36％～0.62％;标准回收率:砷为96.8％～100.9％;硒为95.9％～103.7％。方法简便、快速、灵敏,适于生活饮用水、地表水和水源水中微量砷、硒的同时测定。