The Geometric Construction of WZW Effective Action in Noncommutative Manifold

By constructing close-one-cochain density Ω^12n in the gauge group space we get the Wess-Zumino-Witten (WZW) effective Lagrangian on high-dimensional noncommutative space.Especially consistent anomalies derived from this WZW effective action in noncommutative four-dimensional space coincide with those obtained by L.Bonora etc.(het-th/0002210).     

光纤孤子在媒质突变界面的反射与透射

本文通过波包慢变假定,准单色近似和径向模式平均法,建立了光纤孤子反射和透射问题的支配方程和边界条件,借助光束传播法,数值模拟孤子在光纤单界面上的反射和透射过程,文中还给出数值实例。 关键词：     

四则运算速算法简介

速算法，就是灵活运用数学运算的特性、原理和规律，把各种要计算的较繁杂的数，合理改变其计算程序和方法，使之简化，以便迅速计算出结果（得数）的方法。熟练地掌握各种速算法，就能提高计算速度的技巧，从而提高工作和学习效率，对加快社会主义现代化建设有重大意义和作用。     

纳米晶软磁合金中的结构对技术磁性的影响——Ⅱ.磁弹耦合作用

对磁弹耦合在决定纳米晶软磁合金宏观磁性中的作用进行了探讨,高场磁化规律以及正电子湮没测量表明:对Fe_73.5Cu₁Nb₃Si_13.5B₉合金,准位错偶极子造成的应力场对畴壁的钉扎效应是造成纳米晶软磁合金矫顽力的重要原因;结构缺陷造成的应力场与磁致伸缩的耦合作用对纳米晶软磁性能有重要的影响.在结构各向异性和磁弹耦合能共同作用下可解释纳米晶合金表现出最佳软磁性能.     

Outline Imaging by THz Time Domain Spectroscopy

Outline imaging by THz time domain spectroscopy is proposed. Spectroscopic splitting at interface is reported, The principle of outline imaging is put forward. Experimental results demonstrate the feasibility of outline imaging by spectroscopic splitting, It is shown that clear out：line image of sample interface could be achieved easily by this technique. The spatial resolution is about 0.6mm. The THz-beam focus, the scanning step and the THz pulse width are the critical foctors affecting the imaging resolution. The signal-to-noise ratio of this technique could be improved greatly compared to the conventional transsion imaging.     

Exact Solution of an Extended Hubbard Model with Electron—Lattice Interaction for an Organic Ferromagnetic Polymer

Using an exact diagonalization method,we study an extended Hubbard model with an electron-lattice interaction for an organic ferromagnetic chain with radical coupling.The result shows that the ferromagnetic ground state originates from the antiferromagnetic correlation between adjoining sites,which is enhanced by the on-site e-e repulsion.The intersite e-e repulsion induces the inhomogeneous distribution of the charge density.The dimerization is decreased by the e-e interaction and the radical coupling.The electron-lattice interaction and the radical coupling can transfer the spin density and charge density between the main chain and the radicals.     

Hydrogenation Properties of Zr Films Under Various Conditions of Hydrogen Plasma

The hydrogenation properties of Zr samples with and without an Ni overlayer under various plasma conditions were investigated by means of non-Rutherford backscattering and elastic recoil detection analysis.The theoretical maximum hydrogen capacity,66.7 at%,could be achieved at a hydrogen absolute pressure of-2Pa and a substrate temperature of-393K for a plasma irradiation of only 10min;this was significantly greater than that for gas hydrogenation under the same hydrogen pressure and substrate temperature.It was also found that the C and O contamination on the sample surface strongly influences the hydrogenation,and that the maximum equilibrium hydrogen content drops dramatically with the increasing total contamination.In addition,the influence of the Ni overlayer on the plasma hydrogenation is discussed.     

"恒力"作用——一道高考题引起的思考

1引言 在2002年的高考物理题中,有一道蹦床的求"恒力"题.原题为:蹦床是运动员在一张绷紧的弹性网上蹦跳、翻滚并做各种空中动作的运动项目.一个质量为60kg的运动员,从离水平网面3.2m高处自由落下,着网后沿竖直方向蹦回到离水平网面5.0 m高处.已知运动员与网接触的时间为1.2 s.若把这段时间内网对运动员的作用力当作恒力处理,求此力的大小.     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.