用二维复式晶格有限集团模型计算聚乙炔的电子结构

以二维复式晶格作为有限系统的集团模型,在紧束缚近似下,计算了π电子在最近邻及次近邻跳跃集团的态密度.讨论了不同结构参数对态密度及带宽的影响.     

极性晶体内表面电子的量子像势及其极化子的有效势

本文从与真空接触的存在二支声子的半无限极性晶体表面附近极化子的哈密顿算符入手，应用二支模型理论，分别对GaAs和ZnO两种材料计算了内表面电子的量子像势及其极化子的有效势。计算结果表明：当Z很小时，经典像势和半经典有效势分别与量子像势和量子有效势相差较大；当Z很大时，经典像势和半经典有效势分别是量子像势和量子有效势的一个很好的近似。     

Momentum Transfer Dependence of Two Types of the Broad Enhancement Phenomena： CO Spectra in the Valence Energy Region

Partial generalized oscillator strength densities of CO molecules related to the excitation of a 5σ or 1π electron are calculated by using multi-scattering self-consistent-field methods.Momentum transfer dependence of two types of the broad enhancement phenomena above the threshold with one-electron character,i.e. shape resonance and non-resonance enhancement,is studied.Our calculations show that the energy position of a non-resonance enhancement is related to the momentum transfer K.Therefore,electron impact based experiments can be used to identify the two types of the broad enhancement phenomena.     

高斯束激光摇摆场中的电子运动轨道分析

对高斯束激光摇摆场中的电子运动轨道进行了分析．推导出轴向导引磁场与反向传播的激光摇摆场作用下的单粒子电子运动轨道，并对轨道的稳定性进行了分析．发现当瑞利长度较大时，得到的结果与平面电磁波摇摆场的结果相一致．与静磁摇摆场的自由电子激光相似，在激光摇摆场中的电子轨道也存在两类分立轨道，但是，与静磁摇摆场不同的是，这两类轨道都是稳定的 关键词：     

La1-xPrxMnO3(x=0.1,0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La1-xPrxMnO3(x=0.1,0.2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO3单晶基底上.XRD结果显示薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CMR)效应,其中磁电阻比率达95%(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体系中Pr离子的价态为+4价,因此该薄膜很可能是电子掺杂的庞磁电阻体系.     

High—Efficiency Organic Double—Quantum—Well Light—Emitting Devices Using 5,6,11,12—Tetraphenylnaphthacene Sub—monolayer as Potential Well

The double-quantum-well organic light-emitting devices of indium-tin-oxide (ITO)/NPB (50nm)/rubrene (0.05nm)/NPB (4nm)/rubrene (0.05nm)/Alq3 (50nm)/LiF (0.5nm)/Al were fabricated, in which N,N-bis-(1-naphthyl)-N,N‘-diphenyl-1,1‘-biphenyl-4,4‘‘‘‘‘‘‘‘-diamine (NPB) is used as a barrier potential or hole transport layer, tris (8-hydroxyquinoline) aluminium (Alq3) used as electron transport layer, and 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter. The brightness can reach 18610cd/m^2 at 13V. The maximum electroluminescent efficiency of the device was 6.61cd/A at 7V, which was higher than that of common dope-type devices. In addition, the electroluminescence efficiency is relatively independent of the drive voltage in the range from 5 to 13V.     

Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices

We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage （I - V） curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.     

利用г—X混合在AlAs／GaAs异质结构实现光生电子、空穴对的持久存储

利用GaAs量子阱中г谷束缚态与AlAs层中X谷束缚态在异质结界面处的共振г-X混合，使得光生电子不仅在实空间而且在K窨 与光生空穴分离开来，从而在结构中形成了持久的电荷极化。这一效应已被C-V特性上所观察到的电容阶跃和正反扫描时所出现的双稳滞迟现象所证实。如果将我们的器件用作光存储单元，预期可以获得很长的存储时间Ts。同时，由于г-X混合隧穿速率很快，光子“读出”仍可以保持很快。     

半导体反型层中的电子关联和多体波函数

本文运用CBF(correlation basis function) 理论, 由电子间的有效势V_eff_(R) 和电子气的集体振荡行为, 给出准二维电子体系— 半导体反型层中的电子的关联因予U (R), 得到该体系的对关联函数、关联能和多体波函数. 关键词：