回忆郭可信先生振兴中国电子显微学事业的点点滴滴

郭可信先生匆匆地走了．他为发展中国电子显微学事业做出的卓越贡献，为率领我国科学工作者融入国际电子显微学界的不懈努力，一直历历在目．     

C,igahertz longitudinal acoustic phonons originating from ultrafast ligand field transitions in hematite thin films

The creation and propagation of longitudinal acoustic phonons （LAPs） in high quality hematite thin films （α-Fe203） epitaxially grown on different substrates （BaTiO3, SrTiO3, and LaAlO3） are investigated using the femtosecond pump- probe technique. Transient reflection measurements （AR/R） indicate the photo-excited electron dynamics, and the initial decay less than 1 ps and the slow decay of -500 ps are attributed to the electron-LO phonon coupling and electron-hole nonradiative recombination, respectively. LAPs in α-Fe2O3 film can be created by ultrafast excitation of the ligand field state, such as the ligand field transitions under 800-nm excitation as well as the ligand to metal charge-transfer with 400- nm excitation. The strain modulations of the sound velocity and the out-of-plane elastic properties are demonstrated in α-Fe2O3 film on different substrates.     

低聚壳聚糖几何结构和物理化学属性的理论研究

运用密度泛函B3LYP/6-31G+(d)方法对gg构象的低聚壳聚糖进行了结构优化、频率计算和电子结构,并用更高精度的WB97XD/6-311+G(d,p)方法计算了平均结合能及零点能校正,分析了热力学性质.结果表明,由于低聚壳聚糖中的氢键作用,使其形成螺旋结构;聚合度的增加,使平均结合能随之下降,结构的稳定性增强;在降解过程中,均为放热反应,验证了利用降温来提高降解产率的实验的可行性;此外,聚合度的增加,使能隙减小且快速收敛于聚合度为7的6.99 eV,稳定的反应活性与实验相符;HOMO、LUMO的电子密度分布表明,化学活性集中在C2位的氨基、C6位的羟基以及链的两端位置.该结果对低聚壳聚糖模型的建立和低聚壳聚糖降解过程、活性位置以及物理化学属性的尺寸依赖等现象的研究有着指导意义.     

圆窗片表面次级电子倍增效应的数值模拟

基于Monte Carlo模拟算法, 建立了粒子输运模型, 通过对盒形窗内圆窗片表面次级电子倍增现象进行数值仿真, 获得了TE₁₁模非均匀分布电场作用下次级电子倍增的规律. 结果表明: 在微波输入端, 指向窗片表面的磁场力起到了维持次级电子与窗片碰撞的作用, 在电场强度较高的区域倍增剧烈, 有质动力对倍增无贡献; 在微波输出端, 受背离窗片表面磁场力的影响, 在表面静电场较弱的情况下, 次级电子倍增不能发生; 当表面静电场足以维持单面倍增的发生, 随着传输功率的增大, 电子渡越时间增长, 有质动力使得倍增强烈的区域由强电场区逐渐转移到弱电场区域. 对利用外静电场抑制微波输入端次级电子倍增效应的方法进行了数值模拟验证. 关键词： 圆窗片 11模')" href="#">TE₁₁模 次级电子倍增 MonteCarlo模拟     

直膨式太阳能热泵热水器过热度PI控制的实现

从自身特性和应用要求来看,热力膨胀阀作为直膨式太阳能热泵热水器的节流元件,调节品质不高.本文以电子膨胀阀作节流元件,采用太阳辐射强度的开环比例控制与集热板过热度的闭环反馈PI控制相结合的控制方案,通过实验研究的方法逐步制定控制策略,分三种不同情况采取特定参数控制集热板出口过热度.经实验验证,可以实现典型工况下过热度的准确、稳定控制.指出,合理改进电子膨胀阀开度的控制算法,并结合变频压缩机实现对制冷剂流量的串级控制,是实现系统全年优化运行进一步的研究方向.     

倾斜直流场下的介质板击穿统计分析

传统分析介质板次级电子倍增问题的粒子追踪算法方法存在运算耗时长、运算量大等缺点,为此采用统计方法实现了倾斜强直流场下介质击穿过程中次级电子倍增效应的数值模拟,给出了击穿过程中电子数量,电子渡越时间等关键参数的时间图像,同时研究了倾斜角、介质表面光滑度和次级电子产生率对次级电子倍增效应的影响。研究结果表明：强直流场下的次级电子倍增效应存在倾斜角的区域,倾斜角太大或者太小,都可能不会发生次级电子倍增效应,如果倾斜角位于区域内,则饱和状态时电子数目随着倾斜角度的变大而变小;选取光滑系数和次级电子产生系数越小的介质材料,抑制次级电子倍增效应的效果越好。     

三星LG转求量子点技术

正由于OLED电视太贵,全球最大的两家电视制造商三星和LG正在寻求通过量子点(quantum dot)技术来生产电视显示屏,并计划将此技术应用到他们下一代的电视产品之中。这种新生的技术可以将一薄层细微的发光晶体转化成正常的液晶显示图像。目前来看,这种制造工艺非常直接,而且能够以更加便宜的成本提供质量更高的图像,这种成本要比有机电致发光显示(OLED)技术便宜得多。价格更便宜,可能会推动量子点技术更加快速地发展。据     

Fourth-Order Spatial Correlation of Thermal Light

We investigate the fourth-order spatial correlation properties of pseudo-thermal light in the photon counting regime, and apply the Klyshko advanced-wave picture to describe the process of four-photon coincidence counting measurement. We deduce the theory of a proof-of-principle four-photon coincidence counting configuration, and find that if the four randomly radiated photons come from the same radiation area and are indistinguishable in principle, the fourth-order correlation of them is 24 times larger than that when four photons come from different radiation areas. In addition, we also show that the higher-order spatial correlation function can be decomposed into multiple lower-order correlation functions, and the contrast and visibility of low-order correlation peaks are less than those of higher orders, while the resolutions all are identical. This study may be useful for better understanding the four-photon interference and multi-channel correlation imaging.     

Influence of Rashba SOI and Polaronic Effects on the Ground-State Energy of Electrons in Semiconductor Quantum Rings

The influence of Rashba spin-orbit interaction （SOI） and polaronic effect on the ground-state energy of electrons in semiconductor quantum rings （QRs） are studied by means of the Lee-Low-Pines variational method. Numerical calculations for GaAs QRs are performed and the results show that the ground-state energy of electrons splits into two branches as E（↑） and E（↓） under the Rashba SOI, which correspond to the spin-up state and spin-down state, respectively. The contribution of the Rashba SOI effect to the ground-state energy of electrons is related to the spin state of electrons and is closely linked to the inner and outer radii of a QR. However, it is independent of the height of the QR. The ground-state energy of electrons decreases due to the polaronic effect in QRs. The energy shift ＆#8710;Ee-LO of the ground-state of the electron induced by the polaronic effect decreases monotonically with increase of the height of a QR and fluctuates with the changes of the radii of QRs. The amplitude of the fluctuation is very sensitive and remarkable to the changes of the inner radius R1 and the outer radius R2.     

Effects of oxygen vacancy location on the electronic structure and spin density of Co-doped rutile TiO2 dilute magnetic semiconductors

According to density functional theory （DFT） using the plane wave base and pseudo-potential, we investigate the effects of the specific location of oxygen vacancy （Vo） in a （Ti,Co）06 distorted octahedron on the spin density and magnetic properties of Co-doped rutile Ti02 dilute magnetic semiconductors. Our calculations suggest that the Vo location has a significant influence on the magnetic moment of individual Co cations. In the case where two Co atoms are separated far away from each other, when the Vo is located at the equatorial site of a Co-contained octahedron, the ground state of the two Co cations is d6（t3g↑, t23g ↓） without any magnetic moment. However, if the Vo is located at the apical site, these two Co sites have different ground states and magnetic moments. The spin densities are also observed to be modified by the exchange coupling between the Co cations and the location of Vo. Some positive spin polarization is induced around the adjacent O ions.