Total cross sections for electron scattering from sulfur compounds

The original additivity rule method cannot give good results for electron scattering from SO,SO2,SO2Cl2,SO2ClF,and SO2F2 molecules at low energy,because the electron-molecule scattering is simply reduced to electron-atom scattering.Considering the difference between the bound atom in a molecule and the corresponding free atom,the original additivity rule is revised.With the revised additivity rule,the total cross sections for electron scattering from these molecules are calculated over a wide energy range below 3000 eV and compared with the available experimental and theoretical data.A better agreement between them is obtained.     

退火温度对a-Se0.70Ge0.15Sb0.15薄膜的结构和光学性质的影响

研究了退火温度对Se0.70Ge0.15Sb0.15薄膜的影响.通过热蒸发技术,在300K温度下将大块无定形Se0.70Ge0.15Sb0.1s沉积在石英和玻璃衬底上.研究发现,未经过退火处理的薄膜结构和在300K,1.33×10-5Pa下退火1小时后的薄膜结构都是无定形结构,而在同样气压470K温度下退火1小时的薄膜有结晶现象.通过在300 2 500nm范围内垂直入射光方向上透射率和反射率的测试,研究了薄膜的一些光学参数,如消光系数(k),折射系数(n)和吸收系数(a).研究发现,n和k同热处理温度有关.通过光学数据的分析,得到了不同条件下薄膜的间接带隙宽度(Enong),未经过热处理薄膜的Enong是1.715±0.021eV,300K下退火薄膜的Enong是1.643±0.021eV,470K下退火的Enong是1.527±0.021eV.退火温度降低了带隙宽度Enong,但增加了带尾eo这种效应可以根据Mott和Davis提出的多晶体系中态密度来解释.     

生长温度对In0.53Ga0.47As/InP的LPMOCVD生长影响

利用LPMOCVD技术在InP衬底生长了InxGa1-xAs材料，获得表面平整．光亮的In0.53Ga0.47As外延层。研究了生长温度对InxGa1-xAs外延层组分、表面形貌、结晶质量、电学性质的影响。随着生长温度的升高，为了保证铟在固相中组分不变，必须增加三甲基铟在气相中的比例。在生长温度较高时，外延层表面粗糙。生长温度在630℃与650℃之间，X射线双晶衍射曲线半高宽最窄，高于或低于这个温度区间，半高宽变宽。迁移率随着生长温度的升高而增加,在630℃为最大值，然后随着生长湿度的升高反而降低。生长温度降低使载流子浓度增大，在生长温度大于630℃时载流子浓度变化较小。     

膨胀石墨 3 mm波消光数值计算

为探讨膨胀石墨作为3 mm波干扰材料的消光、散射特性及其影响因素, 基于有限长度、有限电导率圆柱状导体的电磁散射, 利用矩量法建立了膨胀石墨的消光、散射、吸收及后向散射截面(雷达散射截面RCS)的计算式. 运用Mathematica编程计算并分析了膨胀石墨长度、半径、电导率、磁导率等因素与膨胀石墨消光、散射、吸收截面及RCS的关系. 结果表明: 当膨胀石墨的长度为1.5 mm、半径为0.05 mm时, 具有较好的消光、散射效果; 适当增大膨胀石墨的电导率、磁导率, 有利于提高其消光、散射能力. 本研究为探索增强膨胀石墨干扰3 mm波效果的技术途径提供了有价值的参考.关键词：膨胀石墨石墨层间化合物消光截面矩量法     

N4H4分子取代基效应的量子化学研究

本文计算了甲基(-CH3),羟基（-OH）对1-丁氮烯和2-丁氮烯的取代基效应。当1-丁氮烯引入取代基后,N=N双键的键长变短,而N-N单键的键长增长。异构体2-丁氮烯的键长变化较小。当引入甲基或羟基后,N原子的孤对电子会与相应的N-C(N-O)键之间发生相互作用,使整个分子的超共轭作用增强。随着取代基数目的增多,总能量和生成热就会降低,取代基数目与分子能量（生成热）之间具有很好的相关性。     

双频超声交替强化超临界流体萃取装置的设计与应用

本文针对超临界流体萃取（SFE）系统设备的特点，设计丁可用于强化SFE过程的双频超声波交替强化装置。以香椿叶中黄酮类化合物为提取对象，对超声强化USFE过程的影响因素及强化效果进行了实验研究，结果表明；低频超声利于提取，频率为20kHz的超声强化的萃取率最大，38kHz的超声最小，两者交替的居于中间。     

新型含氧亚甲基和亚胺桥键液晶化合物分子结构与光谱的密度泛函理论研究

采用密度泛函理论方法在B3LYP/6-31G*水平上对6个新型含氧亚甲基和亚胺桥键液晶化合物分子的几何结构进行优化计算,讨论了取代基H,CH3,CH3O,C2H5O,NO2,Cl对分子电荷、前线轨道能量和电子吸收光谱等性质的影响.在此基础上使用含时密度泛函理论方法计算了分子第一激发态的电子垂直跃迁能,得到最大吸收波长λmax.计算表明,取代基的引入导致最大吸收波长红移.     

Nd(Fe,Si)11Cx化合物的全电子计算(x=0,2)

采用基于第一原理的全势能线性缀加平面波加局域轨道((L)APW lo)方法对Nd(Fe,Si)11Cx化合物(x=0,2)的电子结构进行了计算,得到了化合物态密度和磁矩等信息.计算结果表明NdFe9Si2化合物中Si原子主要与4b和32i位Fe原子产生杂化,导致Fe原子磁矩减小.NdFe9Si2C2化合物C原子使32i位Fe原子磁矩进一步降低,同时减弱了Si原子的影响,使得4b位Fe原子磁矩增大.     

Tight—binding calculation of the electronic states of bulk—terminated GaAs（311）A and B surfaces

We have carried out theoretical investigations on the electronic structure of GaAs(311)A and GaAs(311)B surfaces. The bulk electronic structure of GaAs has been described by the second-neighbour tight-binding formalism and the surface electronic structure was evaluated via an analytic Green function method. First, we present the surface band structure together with the projected bulk band of both Ga-terminated and As-terminated for GaAs(311)A and GaAs(311)B surfaces, respectively. In each case, the number of surface states is determined, and the localized surface features and orbital properties of these surface states along Γ-Y-S-X-Γ high symmetry lines of the surface Brillouin zone are discussed. For the Ga-terminated GaAs(311)A (1×1) surface, we have tested two possible structure models, i.e. "the bridge site" and "the hollow site" models. In comparison with the angle-resolved photoelectron spectroscopy studied recently, the results have shown that the surface electronic states of the hollow site model are in good agreement with the experiments, whereas those of the bridge site model are not. So we have concluded that the hollow site model is favourable for the Ga-terminated GaAs(311) (1×1) surface and the bridge site model should be excluded.     

Magnetic properties of TbMn6Sn6-xGax (x=0.0－1.2) compounds

Effects of Ga substitution for Sn on the structure and magnetic properties of TbMn₆Sn_6-xGa_x (x=0.0－1.2) compounds have been investigated by means of x-ray diffraction, magnetization measurement and ¹¹⁹Sn M?ssbauer spectroscopy. The substitution of Ga for Sn results in a decrease in lattice constants and unit-cell volumes. The magnetic ordering temperature decreases monotonically with increasing Ga content from 423 K for x=0.0 to 390 K for x=1.2. At room temperature, the easy magnetization direction changes from the c-axis to the ab-plane. This variation implies that the substitution of Ga for Sn leads to a decrease in the c-axis anisotropy of the Tb sublattice. An increase in the non-magnetic Ga concentration results in a monotonic decrease of the spontaneous magnetization M_s at room temperature. Since there are three non-equivalent Sn sites, 2c (0.33, 0.67,0), 2d (0.33, 0.67,0.5) and 2e (0,0,0.34) in the TbMn₆Sn_6-xGa_x compounds, the ¹¹⁹Sn M?ssbauer spectra of the TbMn₆Sn₆ and TbMn₆Sn_5.4Ga_0.6 compounds can be fitted by three sextets. The hyperfine fields (HFs) decrease in the order of HF(2d)>HF(2e)>HF(2c), which is in agreement with the magnetic structure.