荧光XAFS研究Si可稀浓度杂质的区域结构

荧光ＸＡＦＳ研究Ｓｉ晶体中等电子，缺电子和富电子杂质原子的区域环境结构。结果表明杂质原子的电子构型决定了杂质原子对Ｓｉ区域晶格形变的影响。相对于共价键长ＲＳｉ－Ｓｉ（０．２４０ｎｍ）来说，富电子杂质Ａｓ导致Ｓｉ晶格在Ｓｉ（１１１）方向的ＲＡｓ－Ｓｉ键长产生０．００４ｎｍ的反应增长，等电子杂质Ｇｅ的Ｒ－Ｇｒｅ－Ｓｉ和缺电子杂质Ｇａ和ＲＧａ－Ｓｉ键长收缩０．００２ｎｍ。     

二甲亚砜氯化镨的堆积模型推测与结构研究

本文根据堆积模型推测二甲亚砜氯化稀土LnCl_3·4DMSO的分子结构为[Ln(DMSO)_8][LnCl_6],与对PrCl_3·4DMSO的晶体测定结果一致。象[Pr(DMSO)_8][PrCl_6]这样的镧系元素配合物结构类型是首次报道。     

氯化血红素催化新型荧光反应测定葡萄糖的研究

本文用流动注射分析了研究了过氧化物模拟酶催化过氧新型荧光底物（Ｎ，Ｎ－二氰甲基邻苯二胺，ＤＣＭＯＰＡ）的最优条件。结果表明，该系统可用于定量测定氧化氢及催化氯化血红素的浓度。     

二芳基汞的合成

将氯化重氮苯的溶液加入氯化汞、维生素C、丙酮和少量氯化铜的混合物中,得到80％的氯化苯汞;如在反应混合物中补加维生素C、氯化铜和浓氨水,则得到二苯汞。用同样的方法制备了其他的二芳基汞,并讨论了反应可能的机理。     

三氯化氮的生成和水解

结合文献资料和有关教材的内容,对NCl3的生成条件、水解机理及水解的最终产物进行讨论。     

手性大孔磷酸镓Hit-5的水热合成与晶体结构

本文采用水热合成法制备了一个三维手性大孔开放骨架磷酸镓Ga16P16O75·4[1,6-C6H18N2]·[C2H10N2]·2H2O(简称Hit-5).反应起始原料摩尔配比为:1 GaOOH:15 H3PO4:7.5 H2N(CH2)6NH2:0.5 C2H8N2:555 H2O.Hit-5属正交晶系,P21212空间群,晶胞参数:a=0.8671(1)nm,b=1.7945(1)nm,c=0.9101(1)nm,β=108.33(1)°,V=1.3443(2)nm3,Z=4.Hit-5的骨架是由Ga3P3六聚体和Ga4P4八聚体两个不同的二级结构单元通过共顶点联接构成三维纳米孔结构,在[001]方向呈现16-元环孔道.     

优质GaAs/Si和AlGaAs/Si材料的MOCVD生长研究

用自制常压MOCVD装置,在Si衬底上生长GaAs和AlGaAs外延层,在高温去除Si衬底表面氧化膜之后,采用两步法,即低温生长过渡层,再提高温度生长外延层。得到了表面镜面光亮的优质GaAs和AlGaAs外延层。X射线双晶衍射仪测试GaAs外延层,其回摆曲线半峰宽是200孤秒,GaAs和AlGaAs外延层在77K温度下,PL谱半峰宽分别是17meV和24meV。     

Electron Transport in Ga-Rich InxGa1-xN Alloys

Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN （0.06 ≤ x ≤ 0.135） alloys grown by metal-organic vapour phase epitaxy （MOVPE） technique are carried out as a function of temperature （15-350 K）. Within the experimental error, the electron concentration in Inx Ga1-x N alloys is independent of temperature while the resistivity decreases as the temperature increases. Therefore, Inx Ga1-xN （0.06 ≤ x ≤0.135） alloys are considered in the metallic phase near the Mort transition. It has been shown that the temperaturedependent metallic conductivity can be well explained by the Mort model that takes into account electron-electron interactions and weak localization effects.     

First-Principles Calculation of Static Equation of State and Elastic Constants for GaSe

The all-electron full potential augmented plane-wave plus local orbital （APW_Io） method with the local-density approximation （LDA） is used to calculate the static equation of state （EOS） and elastic constants of crystalline GaSe. After the full relaxation of atomic positions, the calculated band structure at ambient pressure is consistent with the experimental data to the extent expected to give the known limits of LDA one-electron energies. The equilibrium lattice parameters found here exhibit the usual LDA-induced contraction. However, constrained with the experimental cell volume, the interlayer separation exhibits an expansion due to the LDA underestimate of the weak interlayer bonding. The calculated values of elastic constants are in good agreement with acoustic measurements. The pressure derivatives of the lattice constants derived from the theoretical elastic constants are in very good agreement with x-ray spectra measurements. Two analytical EOSs have been determined at pressures up to 4.5 GPa. The pressure evolution of the structure indicates that the layer thickness decreases slightly under pressure.