Y（Fe，Si）12化合物结构与磁性的第一原理计算

R（Fe，Si）12（R=Y，Nd）型稀土永磁材料具用重要的实际应用价值，然而对于V（Fe，Si）12化合物微观机理的理论计算工作至今尚未开展。采用新近发展的全势能线性缀加平面波（（L）APW）＋局域轨道（10）和广义梯度近似（GGA）密度泛函方法对其结构与磁性进行了研究。     

Time—Resolved Photoluminescence Studies of AlInGaN Alloys

We study the two samples of AlInGaN,i.e.,1-μm Gan grown at 1030℃ on the buffer and followed by a 0.6μm-thick epilayer of AlInGaN under the low pressure of 76 Torr and the AlInGaN layer deposited diectly on the buffer layer without the high-temperature GaN layer,by temperature-dependent photoluminescence(PL) spectroscopy and picosecond time-resolved photoluminescence(TRPL) spectroscopy.The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures,indicating significant disorder in the material.We attribute the disorder to nanoscale quantum dots or discs of high indium concentration.Temperature dependence of dispersive exponent β shows that the stretched exponential decay of the two samples comes from dfferent mechanisms.The different depths of the localization potential account for the difference,which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.     

三嗪类光学探针与标记分析

评述了以三聚氰氯作桥联剂或骨架而合成的三嗪类衍生物、特别是其光学标记探针的研究进展及分析应用。