高纯锗探测器的广泛应用和自主研制进展

以目前国际上极为活跃开展的暗物质探测、无中微子双 衰变研究为例,评述了高纯锗探测器的重要性及其广泛的应用前景。介绍了己开展的高纯锗单晶、探测器制备的关键技术研究进展:合作单位已研制出了用于高纯锗单晶材料制备的区熔炉、单晶炉;并制备出直径为20  50 cm、纯度为12N(< 41011  atoms/cm3)、位错< 5000 atoms/cm2 的锗单晶;掌握了高纯锗探测器(平面型、同轴型)制备的关键技术,用进口高纯锗单晶材料制备出的同轴型高纯锗探测器对射线的能量分辨率及探测效率均达到进口产品指标,使用自制的12N 高纯锗单晶材料己制备出平面型高纯锗探测器。呼吁加速高纯锗研制的自主创新步伐,尽早实现其国产化目标。The article reviews importance and wide applications of HPGe detector, especially the application on the dark matter search experiment and double beta decay experiment. The research progress on the Highpurity germanium single crystal and HPGe detector in China has been introduced. The cooperation partner developed new type zone-refining furnace and single crystal furnace. The ultra-purity germanium single crystal with 20~50 cm, purity up to 12N(net impurity concentration is less than 41011 atoms/cm3), and dislocation less than 5 000 /cm3 was prepared. The key technologies for preparing planar and coaxial HPGe detector were mastered. The coaxial detector, which has been made of imported ultra-purity germanium single crystal has excellent energy resolution and efficiency as the imported commercial detector. The planar detector using selfmade germanium single crystal was also successfully manufactured. The research group appeals for speeding up the pace of independent innovation on the high-purity germanium, and achieving the high-purity germanium localization as soon as possible.     

ICP-AES测定氟化稀土中铝

采用高氯酸、盐酸分解样品,草酸将稀土沉淀分离,用ICP-AES快速测定氟化稀土中的铝,加标回收率达98%—102%,相对标准偏差＆lt;2.0%,此方法分析简单快速、结果准确可靠。     

nc-Ge/SiN_x多层膜的光致发光特性

通过将a-Ge∶H/a-SiN_x多层膜进行氧化,制备了nc-Ge/SiN_x多层膜。观察到了室温下的强烈可见光发射,发光波长为500nm。通过分析,排除了与量子限制效应有关的光发射机制,也排除了与Si和N相关的缺陷产生的复合机制,认为该发光源于氧化后的a-SiN_x介质层中带尾态之间的辐射复合,最有效的激发能量约为介质层的带隙。     

Ge(Ⅳ)与Ga(Ⅲ)、Pb(Ⅱ)、Ce(Ⅲ)、V(Ⅴ)和W(Ⅵ)的析相绿色萃取分离和富集

用光度法研究了正丙醇-碘化钾-水体系萃取分离锗的行为,探讨了Ge（Ⅳ）与一些金属离子的分离条件。实验表明.当溶液中正丙醇、碘化钾和硫酸铵的浓度分别为30%（V/V）、8.0×10^-3mol/L和0.20g/mL时,Ge（Ⅳ）与Ga（Ⅲ）、Pb（Ⅱ）、Ce（Ⅲ）、V（Ⅴ）和W（Ⅵ）可定量分离。     

Investigation of add-back effects in a segmented Clover detector

The resolution and the summing characteristics of an EXOGAM segmented Clover germanium detector has been studied for use it in y spectroscopic experiments. The measurements have been performed with standard radioactive sources of ^152Eu, ^133Ba and β-delayed γ-rays from 176Ir decay. The data analytic results, realized by software, are presented in this paper.     

等温结晶化条件对氟化孔洞聚丙烯膜电荷稳定性的显著影响

基于开路热刺激放电电流和电荷等温衰减测量系统地研究了等温结晶化条件对氟化孔洞聚丙烯(PP)膜电荷稳定性的影响.结果表明等温结晶化温度和时间对氟化PP膜的电荷稳定性或电荷陷阱的构造具有显著的影响,即使90 ℃,0.5 h的等温结晶化处理也能显著地加深其电荷陷阱、改善电荷的稳定性.而且随着等温结晶化温度的提高和时间的延长,电荷陷阱进一步被加深、电荷稳定性进一步被改善,如130 ℃,2 h以上的等温结晶化情形.衰减全反射红外分析和宽角X射线衍射分析表明,电荷稳定性的改善归因于PP膜的组成和结构变化.     

锗硅合金脊形光波导的优化分析与设计

根据脊形光波导的基本设计要求，分析了锗硅合金脊形波导的结构参数对其光传播特性的影响，并优化设计了结构参数，其合理性得到了实验验证。     

Tm~(3+)掺杂锗碲酸盐玻璃的近2μm光谱性质

用高温熔融法制备了Tm2O3掺杂浓度为0.25,0.5,0.75,1,1.25,1.5 mol%的40 Ge O2-35Te O2-15Pb O-5Al2O3-2.5Ca O-2.5Sr O锗碲酸盐玻璃.热学性质测试表明该玻璃的转变温度为446℃,没有析晶峰.玻璃的最大声子能量约为750 cm-1.利用Judd-Ofelt理论计算了Tm3+的Judd-Ofelt参数Ωt(t=2,4,6)、不同浓度下Tm3+离子各激发态能级的自发辐射概率、荧光分支比以及辐射寿命等参数.采用808 nm波长抽运源测试了Tm3+离子的荧光光谱.发现掺杂浓度为1 mol%时约1.8μm处的荧光强度最强.根据Mc Cumber理论计算了3F4→3H6的发射截面,其峰值发射截面为6.5×10-21cm2.根据速率方程计算了玻璃中OH引起的Tm3+的3F4能级的无辐射弛豫速率,随着Tm3+浓度增加,OH对3F4能级的猝灭速率增加.这种玻璃有望研制成一种新型的约2μm的激光玻璃材料.     

黄芩中锗的分光光度研究

对黄芩中的锗进行了分光光度法研究，结果表明，黄芩中含有丰富的有机锗。本方法简单可靠，可获得满意的分析结果。     

A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

In this paper, we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fabricated on a thin silicon-on-insulator (SOI) with a step-by-step derivation of the model formulation. The collector injection width, the internal base—collector bias, and the hole density at the base—collector junction interface are analysed by considering the unique features of the internal and the external parts of the collector, as they are different from those of a bulk counterpart.