Synthesis of multi-walled carbon nanotubes using CoMnMgO catalysts through catalytic chemical vapor deposition

The Co Mg O and Co Mn Mg O catalysts are prepared by a co-precipitation method and used as the catalysts for the synthesis of carbon nanotubes（CNTs） through the catalytic chemical vapor deposition（CCVD）. The effects of Mn addition on the carbon yield and structure are investigated. The catalysts are characterized by temperature programmed reduction（TPR） and X-ray diffraction（XRD） techniques, and the synthesized carbon materials are characterized by transmission electron microscopy（TEM） and thermo gravimetric analysis（TG）. TEM measurement indicates that the catalyst Co Mg O enclosed completely in the produced graphite layer results in the deactivation of the catalyst. TG results suggest that the Co Mn Mg O catalyst has a higher selectivity for CNTs than Co Mg O. Meanwhile, different diameters of CNTs are synthesized by Co Mn Mg O catalysts with various amounts of Co content, and the results show that the addition of Mn avoids forming the enclosed catalyst, prevents the formation of amorphous carbon, subsequently promotes the growth of CNTs, and the catalyst with decreased Co content is favorable for the synthesis of CNTs with a narrow diameter distribution.The Co Mn Mg O catalyst with 40% Co content has superior catalytic activity for the growth of carbon nanotubes.     

Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge （001） at low temperature

We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge （001） by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.     

化学链燃烧中Fe氧化过程产物层生长特性

利用TGA、SEM研究了化学链燃烧中Fe氧化反应过程产物层的生长机理,以及产物层形貌对化学反应动力学的影响。考虑了不同的反应条件,包括氧化时间、反应温度、O_2浓度的影响。实验结果表明,氧化产物呈三维岛状生长,反应初期产物岛较小但密度较大,随着反应的进行,产物岛不断长大,但密度先减小后增加;温度及O_2浓度对产物层生长均有影响。产物岛的成核与生长改变了产物层的表观形貌,减小了表观反应速率。     

厚二氧化硅光波导薄膜制备及其特性分析

以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。研究了薄膜折射率和淀积速率与工艺参量之间的关系，通过棱镜耦合仪、傅里叶变换红外光谱、原子力显微镜等测试手段，分析了薄膜的结构和光学特性。结果表明，实验能快速生长厚二氧化硅薄膜，薄膜表面平整，颗粒度均匀，同时薄膜具有折射率精确可控和红外透射性能好的特点，非常适合制作光波导器件。     

分子束外延生长的赝配高电子迁移率晶体管结构中深能级的研究

应用深能级瞬态谱(DLTS)技术详细研究分子束外延生长的Pseudomorphic—high electron mobility transistor(P-HEMT)结构中深能级行为。样品的DLTS表明,在P-HEMT结构的n-AlGaAs层里存在着较大浓度(10¹⁵-10¹⁷cm^-3和俘获截面(10^-16cm²)的高温电子陷阱。它们直接影响着器件性能。高温电子陷阱的产生可能与AlGaAs层里的氧     

基于多元通讯集中控制器的LED植物促生长智能照明控制系统

LED可以高效地释放特定波长的光线,促进植物光合作用;然而市场上较多采用的植物生长灯缺乏系统化的控制,订制成本高,可靠性和灵活性低;为了解决这些问题,开发了一套LED植物促生长智能照明控制系统;该系统采用集中分布式的架构,拓展了可控制的地域范围和优化了系统的响应能力;特别是系统采用了多元通讯模式,巧妙地融合了多种数据传输方式,其中包括多种远程通讯和局域网络通讯,极大地提高了控制系统的灵活性和可靠性;在该模式下,控制设备中嵌入了可配置的优先级列表,集中控制器实时检测并动态地选择高优先级且连接状态良好的通讯方式;在局域无线组网通讯中,提出了一套具有自愈和自维护功能的系统组网策略,极大地提高了下行网络的稳定程度;最后搭建了实验平台,测试了相关功能,试验结果良好;该控制系统具有高可靠性和高灵活性的特点,适应多种农业现场状况,拥有良好的市场潜力。     

Chiral Symmetry Breaking During Growing Process of NaClO3 Crystal under Direct-Current Electric Field

We investigate the influence of dc electric field on chiral symmetry breaking during the growing process of NaClO3 crystal. Nucleation and growth of NaClO3 are completed from an aqueous solution by a fast cooling temperature technology. A pair of polarization microscopes are used to identify a distribution of chiral crystals. Experimental results indicate that the dc electric field has an effect on distribution of chirality, but the direction of the dc electric field is not sensitive to the chiral autocatalysis and selectivity, i.e. the nature convection driving by the gravity does not play an important role on a thin layer of NaClO3 solution. The experimental phenomena may be elucidated by the ECSN mechanism.     

相变域硅薄膜材料的光稳定性

采用RF-PECVD技术，通过改变反应气体的硅烷浓度制备了一系列不同晶化率不掺杂的硅薄膜材料，研究了工艺变化对材料结构的影响及材料光电特性同微结构的关系.随后进行了光衰退试验，在分析光照前后光电特性变化规律的基础上，认为材料中的非晶成分是导致材料光电特性衰退的主要原因.在靠近过渡区非晶一侧的硅材料比普通非晶硅稳定，衰退率较少；高晶化率微晶硅材料性能稳定，基本不存在光衰退；在靠近过渡区微晶一侧的硅材料虽然不是完全不衰退，但相比高晶化率硅材料来说更适合制备高效微晶硅电池. 关键词： 射频等离子体增强化学气相沉积 硅薄膜 Staebler-Wronski(SW)效应 稳定性     

常压MOCVD生长Ga2O3薄膜及其分析

以去离子水(H₂O)和三甲基镓(TMGa)为源材料,用常压MOCVD方法在蓝宝石(0001)面上生长出β-Ga₂O₃薄膜.用原子力显微镜(AFM)、X射线衍射(XRD)以及二次离子质谱(SIMS)实验表征Ga₂O₃外延膜的质量.在X射线衍射谱中有一个强的Ga₂O₃(102)面衍射峰,其半峰全宽(FWHM)为0.25°,表明该Ga₂O₃外延膜是(102)择优取向.在二次离子质谱中除了C、H、O和Ga原子外,没有观测到其他原子.     

ZnO/A1lN/Si(111)薄膜的外延生长和性能研究

用常压金属化学气相沉积法(MOCVD)在Si(111)衬底上制备了马赛克结构ZnO单晶薄膜.引入低温AlN缓冲层以阻止衬底氧化、缓解热失配和晶格失配.薄膜双晶X射线衍射2θ/ω联动扫描只出现了Si(111)、ZnO(000l)及AlN(000l)的衍射峰.ZnO/AlN/Si(111)薄膜C方向晶格常量为0.5195 nm,表明在面方向处于张应力状态;其对称(0002)面和斜对称(1012)面的双晶X射线衍ω摇摆曲线半峰全宽分别为460"和1105";干涉显微镜观察其表面有微裂纹,裂纹密度为20 cm-1;3 μm×3μm范围的原子力显微镜均方根粗糙度为1.5 nm激光实时监测曲线表明薄膜为准二维生长,生长速率4.3μm/h.低温10 K光致发光光谱观察到了薄膜的自由激子、束缚激子发射及它们的声子伴线.所有结果表明,采用金属化学气相沉积法并引入AlN为缓冲层能有效提高Si(111)衬底上ZnO薄膜的质量.