具有复合性能的新型三脚架型多苯并咪唑季铵盐类化合物的合成、表征和应用

合成了15种新型三脚架结构苯并咪唑季铵盐类化合物(3a~3o)。 通过IR、NMR和HRMS等技术手段对目标产物(3a~3o)进行了结构表征。 并对目标化合物调节植物生长活性进行了评价。 结果表明, 目标化合物浓度为10 mg/L时, 化合物3a、3c、3f、3g、3h、3i和3j均具有优良的促细胞分裂活性, 最高达88.3%, 比参照物三唑酮(50.2%)的促细胞分裂活性更高, 但生长素活性不明显;目标化合物均具有优异的除草活性, 其中化合物3i效果最明显, 可以达到95.6%。 同时利用荧光光谱, 探究了4种代表性目标分子对人体中常见的6种阴离子的荧光识别, 结果发现目标化合物能较好的识别I^- , 可作为I^-荧光识别探针。     

Pb(Zr0.3Ti0.7)O3铁电薄膜激光感生电压效应

采用脉冲激光沉积(PLD)技术在LaSrAlTaO₃(LSATO),LaAlO₃(LAO)和SrTiO₃(STO)的单晶倾斜衬底上成功制备了Pb(Zr_0.3Ti_0.7)O₃(PZT)薄膜,在三种倾斜衬底上生长的PZT薄膜中都首次发现了LIV效应.对PZT/LSATO薄膜在a,c轴两种不同取向择优生长下的LIV效应做了研究,发现在薄膜c轴取向择优生长 关键词： 激光感生电压效应 铁电薄膜 薄膜生长取向 原子层热电堆     

聚对苯二甲酸乙二醇酯-双酚A型聚碳酸酯共混体系中聚合物伸直链晶体的形态分析

利用扫描电子显微镜(SEM)和原子力显微镜(AFM)等表征手段,研究了聚对苯二甲酸乙二醇酯-双酚A型聚碳酸酯(PET-PC)共混物的高压结晶样品。研究发现共混体系中存在具备不同形态特征的伸直链晶体,其中包括楔形晶体、弯曲晶体以及楔形弯曲晶体。通过对这些晶体的形态观察,揭示出体系中大尺寸聚酯伸直链单晶体的增厚生长首先要经历形成折叠链晶核的成核阶段,然后才是在酯交换反应和链滑移扩散两种机制共同作用下的等温增厚的链伸展过程。有助于深入理解PET-PC共混物中伸直链单晶体生长过程的本质因素,以便在类似聚合物体系中合成大尺寸的同类晶体。     

TFA-MOD法制备YBCO薄膜生长速率研究

采用原位电阻法对TFA-MOD法高温热处理阶段YBCO薄膜生长速率进行了研究。实验结果和分析表明原位电阻测量法是一种估算YBCO层生长速率的有效方法,不同条件下的测量结果表明薄膜生长速率随管式炉内的温度、水分压、气体流量的上升而明显增加,但随薄膜面积的增加而减小。实验结果为进一步探索和优化热处理过程提供了重要的基础。     

基于视觉注意力模型的背景斑点提取方法

针对传统人工选取背景斑点的不足,提出了一种基于视觉注意力模型的背景斑点提取方法。首先根据Itti显著图模型确定背景图中的显著区域;然后找出若干注意视点,并将这些视点作为种子点在原图上进行区域生长;最后在区域生长的基础上依据相关准则提取出斑点。实验结果表明,该方法可以准确地找到背景图中的明显斑点,使进一步的背景斑点分析成为可能。     

Influence Factors on Particle Growth for On-line Aerosol Matrix-assisted Laser Desorption/Ionization Time-of-flight Mass Spectrometry

利用自行研制的蒸发/冷凝实验装置作为基质辅助激光解吸/电离飞行时间质谱仪的特种接口,通过冷凝方式在线添加基质,冷凝管出口处的最终粒子直接引入空气动力学粒径分析仪或自行研制的飞行时间质谱仪,可对实验室产生的生物气溶胶粒子进行实时检测. 同时研究了最终粒子粒径大小的决定因素：加热池温度、初始粒子大小及其粒子数浓度及基质种类,获得了探测分析物分子离子峰所需的实验条件.     

Effect of Time-Delay in the Logistic Growth Model Driven by Weak Signal and White Noise

Effect of delayed time in the logistic growth model subject to weak periodic signal and correlated multiplicative and additive white noise is investigated. Using small time delay approximation, we obtain the expression of the signal-to-noise ratio （SNR）. It is found that the SNR is non-monotonic functions of the delayed times, the system parameters, the intensities of the multiplicative and additive noise, as well as the correlation strength of the two noises.     

Structural and Magnetic Properties of [Fe/Ni]N Multilayers

[Fe/Ni]N multilayered structure grows epitaxially on the single crystalline MgO substrate. Due to the different directions of magnetic easy axes of Fe and Ni and the strong strain, large anisotropy dispersion is assumed. According to the layer model, the magnetization of Fe and Ni layers cannot follow each easy axis because of exchange coupling, and then the anisotropies are averaged out. The reduction of the effective anisotropy enhances with the decrease of periodic thickness. Thus, the coercivity of [Fe/Ni]N multilayers reduces with decreasing periodic thickness.     

Anomalous Magneto-Transport Properties of Epitaxial Single-Crystal Bi Films on Si（111）

Anomalous transport properties of 40-nm-thick single-crystal Bi（111） films grown on Si（111）-7 × 7 substrates is investigated. The magnetoresistance （MR） of the films in perpendicular magnetic field shows a regular positive behavior in the temperature range 2–300K, the MR in parallel field （B｜｜） displays a series of interesting features. Specifically, we observe a change of the MR （B｜｜） behavior from positive to negative when the temperature is below 10K. In the range 10–170 K, the MR （B｜｜） is negative in the investigated field of 9T. When T 〉 170 K, a positive MR appears in the high field regime. The low temperature MR（B｜｜） behavior in the parallel field can be understood by the competition between weak localization and weak anti-localization （WAL）. Furthermore, our results suggest that the WAL is dominated by the interface carriers.     

InP-based InGaAs/InA1GaAs digital alloy quantum well laser structure at 2μm

The structural and optical characteristics of InP-based compressively strained InGaAs quantum wells have been significantly improved by using gas source molecular beam epitaxy grown InAs/Ino.53Ga0.47As digital alloy triangular well layers and tensile Ino.53Ga0.47As/InAiGaAs digital alloy barrier layers. The x-ray diffraction and transmission electron microscope characterisations indicate that the digital alloy structures present favourable lattice quality. Photo- luminescence （PL） and electroluminescence （EL） measurements show that the use of digital alloy barriers offers better optical characteristics than that of conventional random alloy barriers. A significantly improved PL signal of around 2.1μm at 300 K and an EL signal of around 1.95μm at 100 K have been obtained.