磷的掺杂对碳负极材料性能的影响

研究了磷酸的引入对以聚丙烯腈为基体碳负极材料性能的影响．元素分析、ＸＰＳ及ＸＲＤ分析结果表明，磷在碳材料中与碳及氧原子相结合．磷酸的引入在较低的温度（６００℃）下有利于聚丙烯腈－ＣＮ基的环化、脱氢碳化过程，使氮的含量及ｇｒａｐｈｅｎｅ氮的相对含量增加，磷的键合使碳材料的层间距反而增加，因此位于０．９Ｖ以上及以下的可逆容量均随磷酸的加入量的增加而增加，总的可逆容量高达５２４ｍＡｈ／ｇ．而在较高的温度（１０００℃）下，碳化程度变化不大，主要表现为磷原子的掺杂效果，其引入使位于１．０Ｖ左右的可逆容量增加     

Magnetic and Electrical Transport Properties of Sr1-xLaxRuO3 (0≤x≤0.10)

We investigate the lightly doped polycrystalline Sr1-χLaχRuO3 （χ = 0, 0.02, 0.08 and 0.10）. With La doping, the ferromagnetism in the system has been suppressed. The transition temperature is T＇c at which the long-range ferromagnetism establishes and the magnetization under 3 T at 5 K decreases with increasing χ. In contrast to Sr1-χCaχRuO3, the samples remain with the PM-FM transition at 162K, which might be attributed to the valency change of Ru.     

Improvement of Properties of p-GaN by Mg Delta Doping

The Mg-delta-doped GaN structure has been grown by low-pressure metalorganic chemical vapour deposition.The Hall-effect measurements reveal that the electrical properties are enhanced. The hole concentration is enhanced twice and hole mobility is enhanced three times by Mg-delta doping. Both the etch pit density data and the x-ray diffraction data demonstrate that Mg-delta doping can reduce the threading dislocation density of p-type GaN epilayer.     

有机掺杂溶胶-凝胶法制备pH敏感膜及其光谱响应的研究

使用四甲氧基硅烷（TMOS）和二甲基二甲氧基硅烷（DiMe-DMOS)为共先驱体，采用溶胶－凝胶的有机掺杂，制备对pH具有宽程响应的敏感膜。详细考察了包埋溴酚蓝和溴酚绿的敏感膜对pH的响应值、响应时间、泄漏和可逆性等响应性能指标，并进行了溴酚蓝和溴酚绿在水相与膜内吸收光谱的研究。     

Thermal Conductivity of Ce Doped Bi-2212 Superconductors

The temperature dependence of the thermal conductivity in Bi2Sr2 Ca1-xCexCu2Oy x = 0.1, 0.2, 0.3, 0.4 is presented. With increasing Ce-doping level, the thermal conductivity peak under Tc is suppressed then disappears,while another peak appears at low temperatures for the non-superconducting compounds. The numerical analysis shows that the thermal conductivity peak under Tc can be well described by the normal electron relaxation-time contribution model, and the phonon-induced thermal conductivity peak could be well described within the Debye approximation of the phonon spectrum. The existence and velriation of these two thermal conductivity peaks indicate the adjustability between the superconducting and insulating components in the samples with different Ce-doping levels.     

掺杂LiF的ESR谱和ENDOR谱研究

LiF:Mg,Cu热释光(TL)磷光体在γ辐照后产生F⁰顺磁中心,其g因子为g_xx=2.0030,g_yy=2.0450,g_zz=2.0251,裂分为A_xx=511.04G,A_yy=505.42G,A_zz=507.26G。F⁰中心的浓度随Mg⁺⁺浓度的增加而下降。磷光体的ENDOR谱显示F⁰中心附近有铜核存在。照射前和照射后24h测量均未发现Cu⁺⁺的ESR谱,表明铜是以Cu⁺形式掺入的,照射并未引起Cu⁺离子化合价的改变。LiF:Mg,Cu,P在γ辐照前具有轴对称的Cu⁺⁺离子的ESR谱,辐照后产生了O^-空穴中心和PO₃^2-自由基,改变了Cu⁺⁺的环境,使Cu⁺⁺的谱发     

掺铒光纤吸收截面和福射截面的简单估算方法

提出了一种利用损耗谱测试数据直接计算吸收和辐射截面的近似方法，并实际计算了一些掺铒光纤的截面特性。这对掺铒光纤放大器的理论分析和优化设计有着重要的意义。