Growth of Indium Nanorods by Magnetron Sputtering

Indium nanorods are grown on silicon substrates by using magnetron-sputtering technique. Film morphologies and nanorod microstructure are investigated by using scanning electron microscopy, high-resolution transmission electron microscopy （HRTEM）, and x-ray diffraction. It is found that the mean diameter of the nanorods ranges from 30nm to 100nm and the height ranges from 30nm to 200nm. The HRTEM investigations show that the indium nanorods are single crystals and grow along the [100] axis. The nanorods grow from the facets near the surface undulation that is caused by compressive stress in the indium grains generated during grain coalescence process. For low melting point and high diffusivity metal, such as bismuth and indium, this spontaneous nanorod growth mechanism can be used to fabricate nanostructures.     

四角锥氧化锌的制备及其强蓝光发射性质研究

采用热蒸发锌(Zn)粉的方法制备了大量的ZnO纳米棒状和四角锥状结构。用扫描电子显微镜(SEM)、拉曼光谱(Raman Spectra)和光致发光谱(PL)对样品进行了形貌,结构和发光特性分析。结果表明:合成的ZnO纳米棒具有良好的晶体结构,直径约100～500 nm,长度约2～5μm,还有一些四角锥状结构。在325 nm波长光激发下,有微弱的391 nm带边紫外发射和很强的488 nm蓝光发射,呈现出纳米ZnO优异的蓝光特性,并对其生长机理和发光机理进行了初步的探讨。     

以银纳米棒/氯化银为SERS基底用维多利亚蓝B分子探针检测大肠杆菌

加入增敏剂AgNO₃和NaCl,在银纳米棒(AgNRs)表面吸附了较牢固的AgCl并形成高SERS活性的AgNR/AgCl溶胶基底,维多利亚蓝B(VBB)分子探针在1 611 cm-1处有一较强的SERS峰。用VBB做大肠杆菌(EC)的染色剂,使染色的大肠杆菌具备VBB分子探针的SERS特性,即VBB染色大肠杆菌也在1 611 cm-1处有一较强的SERS峰。在最优条件下,该SERS峰强与大肠杆菌浓度在5×106～3×109 cfu·mL-1 范围内成正比,检出限为2×106 cfu·mL-1,用于水样和饮料中大肠杆菌的分析,具有简便、快速、灵敏等优点。     

亚微米纤芯光纤芯径大小与光学特性的关系

使用Maxell方程的严格解,研究了亚微米直径光纤的单模条件、传播常数、基模分布、传播效率、非线性系数等光学特性,发现亚微米纤芯直径光纤的单模条件与标准光纤相同,非线性系数在直径为700nm左右时最大;当光纤的直径小于1μm时,传播效率骤减.这些结果有助于新型微光通信和光纤传感器件的设计.     

Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films

Large quantities of CaN nanorods are successfully synthesized on Si（111） substrates by ammoniating the films of Ga2O3/ZnO at 950℃ in a quartz tube. The structure, morphology and optical properties of the as-prepared CaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the CaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80 nm to 300hm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.     

Large-Quantity Synthesis of Single-Crystalline Metal Indium Nano/Sub-Micron Wires

Large quantities of metal indium single-crystalline wires with diameters ranging from tens of nanometres to a few micrometres were synthesized on Si substrates. Unlike traditional methods for the fabrication of nanowires or nanorods, liquid indium was squeezed out of the pores and cracks from porous an InAlN layer to form the wires. Continuous pushing out of liquid metal indium under strength, lowering of liquid-solid interfaces and the confinement of the cracks all contribute to the growth of indium wires. Our experiments have shed some light on the possibility of synthesizing large quantities quasi-1D nano/sub-micron structures with specified cross-sectional geometry using the similar method.     

电磁感应中导体棒受安培力作用的教学实践

通过对导体棒在电磁感应中受安培力作用的有关习题分析,培养学生领悟物理规律的能力.     

La2Zr2O7:Eu3+纳米棒的合成、表征及其荧光性能

采用传统固相法和水热法成功地制备出棒状La₂Zr₂O₇:Eu³⁺荧光粉. 利用X射线粉末衍射仪、透射电镜和荧光光谱仪等分析了产物的结构、形貌和发光特性. 结果表明红色荧光粉La₂Zr₂O₇:Eu³⁺有良好的晶相,属于立方结构,空间点群为Fd3m; 其形貌主要为纳米棒, 平均直径约47 nm, 长度为50～700 nm. 并对纳米棒的生长机理进行了探讨. 在466 nm蓝光激发下,La₂Zr₂O₇:Eu³⁺荧光粉能发射出Eu³⁺的特征红色荧光,发射主峰位于616 nm处,归属于Eu³⁺的⁵DO_→⁷F2_{超灵敏电偶极跃迁.此外,在产物的发射光谱中能够观察到⁵D}1_→⁷FJ _{(J=0, 1, 2)跃迁和⁵D}1_→⁷FJ _{(J=1, 2, 4)跃迁的劈裂峰,这说明Eu³⁺处在低对称性的晶体场格位中.}     

一维锰氧化物纳米棒在以O2为氧源的苯甲醇氧化反应中的催化性能

采用水热法合成MnOOH一维纳米线,通过MnOOH在不同气氛和温度中煅烧得到尺寸和形貌相似的不同锰氧化物,并用于以O₂为氧源的苯甲醇液相氧化反应. 结果表明,MnO₂对苯甲醇氧化反应具有较高的催化活性. 通过XPS、SEM、TEM和H₂-TPR等手段对催化剂的形貌和结构进行了表征,并讨论了可能影响反应活性的一些因素. MnO₂的良好催化性能可能与其晶格氧具有较高的迁移率以及氧化还原能力有关. 通过简单的焙烧处理,可以使MnO₂催化剂在苯甲醇氧化反应中具有良好的重复使用性.     

ZnO纳米棒／MEH-PPV异质结的复合电致隧穿发光

利用低温水热法生长的ZnO纳米棒（ZnO-NRs）,和p型有机半导体材料聚[2-甲氧基-5-（2-乙基己氧基）-1,4-苯撑乙烯撑]（MEH-PPV）复合制备了结构为“ITO/ZnO晶种/ZnO-NRs/MEH-PPV/Al”的发光器件。测试结果发现,该器件具有非常好的二极管整流特性。对ZnO-NRs/M EH-PPV异质结施加超过17 V的反向偏压时,可同时获得两种半导体材料的发光,且ZnO近紫外光（380 nm ）发射强度远大于 M EH-PPV的红橙光强度,发光功率随着反向偏压的增加迅速增强,然而施加正向偏压时未探测到发光。该器件的发光机理不同于其他文献报道的正偏压发光,而属于反偏压发光器件,其发光机理归因于有机无机复合异质结的界面特殊性和ZnO-NRs的纳米尺寸效应,反偏压下器件实现的是载流子隧穿发光,而正偏压时载流子以表面态的无辐射复合及漏电流方式消耗。