Thermal Spike Model Description of Swift Heavy Ion Irradiated Polyimide

To describe the role of electronic energy loss (dE/dX)e for chemical modification of polyimide (PI), multi layer stacks (corresponding to different dE/dX) were irradiated by different swift heavy ions (1.158 GeV ^56Fe and 1.755 GeV ^136Xe) under vacuum and at room temperature at the irradiation terminal of HIRFL. Chemical changes of modified PI films were studied by Fourier transformed infrared (FTIR) spectra measured with a Perkin Elmer Soectrum GX in a transmission mode.     

单壁碳纳米管的SERS研究

本文通过改进实验方法,将单壁碳纳米管的乙醇溶液与金胶混合并制作成固体薄膜,使单壁碳纳米管夹裹在金纳米粒子之间,保证了吸附的紧密性,获得了高质量的单壁碳纳米管SERS光谱。不但观测到文献中报道的径向呼吸振动模(RBM)和C-C正切拉伸模(GM)的增强,还在1100-1500cm-1区域观测到一组新峰,其峰形完整并有相当的强度。这些峰在现有的文献中几乎没有报导。文章对这组新峰的出现进行了初步的分析。     

一种基于功率谱对数变换的联合变换相关器

联合功率谱的高频成份对相关峰识别具有重要作用,实验中记录的联合功率谱随着频率的增加其强度迅速降低。为增强联合功率谱的高频成分,改善其调制程度,可对功率谱进行对数变换,从而有效保留更多的高频成份,压低零级衍射光斑,提高联合变换相关器的识别能力。     

RBaCo_2O_(5 δ)(Pr,Sm,Y)体系的滞弹性内耗研究

本文对双钙钛矿结构RBaCo2O5 δ(Pr,Sm,Y)化合物进行了内耗研究。随稀土元素R的不同该材料体系存在着不同的晶体结构,并导致了氧缺陷不同的驰豫行为。体系内耗谱图中呈现的一个驰豫型内耗峰被认为是由于[ROδ]层中额外氧的运动引起的。SmBaCo2O5 δ体系中在360 K附近还观察到一个相变型内耗峰,它伴随有模量的变化。     

纳米晶锐钛矿相TiO2的非简谐效应和声子局域

对晶粒尺寸为19.4,8.6和5.6 nm的纳米晶锐钛矿相TiO2,进行了从83到723 K的变温拉曼散射测量,并对Eg(1)模式进行了详细研究.根据非简谐效应和声子局域模型,对Eg(1)拉曼峰进行了拟合与计算.结果表明,以上三种纳米晶粒的晶格振动机理,在本质上是相同的.三声子过程对频率蓝移起主要作用.为了得到很好的拟合,需要同时考虑三声子和四声子过程.随着温度的升高,四声子过程增强,并对三声子过程起抵消作用.与非简谐衰减相关的声子寿命随着晶粒尺寸的减小而增加,晶粒尺寸越小衰减越慢.在低温区,声子局域是导致5.6 nm晶粒的声子寿命非常短的原因.声子局域引起Eg(1)模式在高波数段非对称展宽和频率蓝移,其对Eg(1)峰展宽的影响要大于对峰位移动的影响.     

内耗与固体缺陷研究

 “内耗”这二个字对大家来说并不陌生,但在物理上它的科学涵义是什么,却鲜为人知.让我们先说一说什么叫“内耗”和为什么要进行内耗研究.;物体作机械振动时,即使这物体与外界完全隔绝,它的振动也会渐渐停止,这种由于内部原因而使物体的振动能量逐渐耗散的现象称为内耗.对于高频振动,这种能量耗散也称为超声衰减。在日常生活中,人们经常会碰到内耗现象.钟声悠扬,余音绕梁三日不绝,说明这铸钟所用的合金材料的内耗是很低的.     

负氢离子源中多峰磁场形态数值模拟

基于磁荷模型,在有限差分法基础上,推导了3维永磁体数值算法,结合全3维PIC/MCC粒子模拟算法,数值分析比较了外置型和“伞状”型两种特殊形态多峰磁场对电子能量沉积的影响。模拟结果表明:二者都能对粒子起到约束作用且能过滤引出负氢离子,同时二者电子能量分布规律基本一致,都呈现了双电子能态,符合等离子体放电基本机理;外置型过滤磁场对粒子的约束能力更强,能明显产生更多的粒子,总粒子数大约是“伞状”型过滤磁场情况下的4倍;“伞状”型过滤磁场能有效地抑制由磁场不均匀所引起的电子漂移,使产生的负氢离子空间分布更均匀。模拟结果与国外实验结果基本一致。     

大能量损失几何条件下剩余电子屏蔽效应的理论研究

通过考虑末通道 中剩余电子的屏蔽效应,用BBK模型及修正方案在大能量损失小动量转移几何条件下对电子电离氦原子的三重微分截面进行了计算,并从物理本质上系统地研究和分析了剩余电子的屏蔽效应在大能量损失几何条件下对三重微分截面所产生的影响.     

Multipeak-structured photoluminescence mechanisms of as-prepared and oxidized Si nanoporous pillar arrays

Silicon dominates the electronic industry, but its poor optical properties mean that it is not preferred for photonic applications. Visible photoluminescence (PL) was observed from porous Si at room temperature in 1990, but the origin of these light emissions is still not fully understood. This paper reports that an Si nanocrystal, silicon nanoporous pillar array (Si-NPA) with strong visible PL has been prepared on a Si wafer substrate by the hydrothermal etching method. After annealing in O₂ atmosphere, the hydride coverage of the Si pillar internal surface is replaced by an oxide layer, which comprises of a great quantity of Si nanocrystal (nc-Si) particles and each of them are encapsulated by an Si oxide layer. Meanwhile a transition from efficient triple-peak PL bands from blue to red before annealing to strong double-peak blue PL bands after annealing is observed. Comparison of the structural, absorption and luminescence characteristics of the as-prepared and oxidized samples provides evidence for two competitive transition processes, the band-to-band recombination of the quantum confinement effect of nc-Si and the radiative recombination of excitons from the luminescent centres located at the surface of nc-Si units or in the Si oxide layers that cover the nc-Si units because of the different oxidation degrees. The sizes of nc-Si and the quality of the Si oxide surface are two major factors affecting two competitive processes. The smaller the size of nc-Si is and the stronger the oxidation degree of Si oxide layer is, the more beneficial for the luminescent centre recombination process to surpass the quantum confinement process is. The clarification on the origin of the photons may be important for the Si nanoporous pillar array to control both the PL band positions and the relative intensities according to future device requirements and further fabrication of optoelectronic nanodevices.     

N2O+离子A2Σ+电子态的光解动力学研究

用一束波长为360.55nm的激光，通过N2O分子的（3+1）共振多光子电离（REMPI）过程制备纯净且布居完全处于X2Π(000)态的母体离子N2O+，然后用另一束波长在275—328nm范围内的可调谐激光将制备的N2O+离子激发至预解离电子态A2Σ+.实验发现，由于解离碎片NO+所具有的一定的反冲速度，其TOF质谱峰明显比N2O+母体宽.通过分析NO+碎片TOF质谱峰形状，得到了解离产物的总平均平动能〈ET〉；通过考察〈ET〉随光解能量的变化，发现光解能量在32000cm-1附近约250cm-1的变化 关键词： N2O+离子A2Σ+态 TOF质谱峰 预解离机理