共光孔技术

叙述实现共光孔技术的原理，方案和具体实验装置，给出实验结果，重点分析其中的光学元件设计、加工的特殊以及系统的调整和激光接收电路中的抗大能量阻塞技术。     

Effect of SiO2 Encapsulation on the Nitrogen Reorganization in a GaNAs／GaAs Single Quantum Well

Effects of SiO2 encapsulation and rapid thermal annealing on the optical properties of a GaNAs/GaAs single quantum well (SQW) are studied by low-temperature photoluminescence (LTPL). After annealing at 800℃ for 30s, a blueshift of the LTPL peak energy for the SiO2-capped region is 25meV and that for the bare region is 0.8 meV. The results can attribute to the nitrogen reorganization in the GaNAs/GaAs SQW. It is also shown that the nitrogen reorganization can be obviously enhanced by SiO2 cap-layer. A simple model is used to describe the SiO2-enhanced blueshift of the LTPL peak energy. The estimated activation energy of the N atomic reorganization for the samples annealing with and without SiO2 cap-layer are 2.9eV and 3.1 eV, respectively.     

超声研磨抛光机

最近国外生产出各种规格型号的超声研磨抛光机.主要用于注塑模、压铸模和冲压模等模具表面的研磨处理和镜面抛光.特别是去除电火花加工所形成的硬化层,研磨模具上的肋、缝、锥形孔和其它各种形状孔的表面,很简易而快捷. 对非铁磁材料和超硬金属都能有效地将粗糙表面研磨成镜面.手持工具重轻、省力省时,即使长时间工     

Lam函数和非线性演化方程的扰动方法

利用小扰动方法对非线性演化方程作展开得到原始方程的各级近似方程.应用Jacobi椭圆函 数展开法求得了零级近似方程的准确解，并由此得到一级近似方程和二级近似方程分别满足 齐次Lam方程和非齐次Lam方程，应用Lam函数和Jacobi椭圆函数展开法可以分别求得一级近似方程和二级近似方程的准确解.这样，就求得了非线性演化方程的多级准确解. 关键词： Jacobi椭圆函数 Lam函数 多级准确解 非线性演化方程 扰动方法     

溶胶-凝胶法制备纳米二氧化硅

以正硅酸乙酯为前驱体，通过水解缩聚形成溶胶、阵化、凝胶、干燥，高温处理制备纳米级二氧化硅。研究了各种介质及其浓度对水解缩聚反应速度和纳米二氧化硅产品质量的影响，找出了最佳的工艺条件，取得了较好的效果。     

用CTMAB作沉淀剂叶蜡石中二氧化硅的重量测定法

我国对叶蜡石的应用已有近两千年的历史,由于叶蜡石具有绝缘性、耐酸性、导热导电率低、熔点和比热高等特性,目前已广泛应用于耐火材料、陶瓷、玻纤、白水泥、造纸和橡塑等许多工业领域。陶瓷工业是叶蜡石的主要应用领域,主要用于生产建筑陶瓷、卫生陶瓷、精细美术陶瓷和特种陶瓷。     

Alkali Metal－incorporated Mesoporous Smectites： Crystallinity and Textural Properties

A series of mesoporous smectite-like materials incorporated with alkali metals such as Li, Na，K and Cs has been synthesized with the hydrothermal method. The crystalline and the pore structures of the materials synthesized significantly change with the introduction of alkali metals. The addition of Li gives highly ordered layer phases, while the incorporation of Cs yields much less crystalline structures. Although Na or K has little effect on the crystalline structure, they modify the pore structure.     

Enhancement of H2 Sensing Properties of In2O3-based Gas Sensor by Chemical Modification with SiO2

The sensitivity and selectivity to H2 of a new In203-based gas sensor were improved significantly by surface chemical modification. A dense layer of SiO2 near the surface of the porous In2O3 bead was formed by chemical vapor deposition (CVD) of diethoxydimethysilane (DEMS). The dense layer functioned as a molecular sieve, thereby the diffusion of gases with large molecular diameters, except for 1-12, was effectively controlled, resulting in a prominent selectivity and high sensitivity for H2. The working mechanism of the sensor was also presented.